Production method for composite material

Patent metadata

Field	Value
Publication number	US-11718569-B2
Application number	US-202017106854-A
Country	US
Kind code	B2
Filing date	Nov 30, 2020
Priority date	Jun 1, 2018
Publication date	Aug 8, 2023
Grant date	Aug 8, 2023

Abstract

A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.

First claim

What is claimed is:

1. A production method for a composite material including a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, the method comprising:
providing a first reaction section and a second reaction section in this order from an upstream side of a reaction furnace,
filling a solid silicon source containing a silicon atom in the first reaction section,
supplying a chlorine source gas containing a chlorine atom to a portion on an upstream side of the first reaction section,
generating a silicon source gas containing SiCl 2 or SiCl by bringing the solid silicon source into contact with the chlorine source gas at the first reaction section,
supplying a carbon source gas containing a carbon atom to a portion between the first reaction section and the second reaction section, and
causing the silicon source gas containing SiC 12 or SiCl and the carbon source gas to react with each other at the second reaction section to form the silicon carbide film on the surface of the material, and
wherein no carbon source gas containing a carbon atom is supplied to a portion on an upstream side of the portion between the first reaction section and the second reaction section.

2. The production method for a composite material according to claim 1 , wherein the silicon carbide film is formed by the reaction using a chemical vapor deposition method or a chemical vapor infiltration method.

3. The production method for a composite material according to claim 1 , wherein a reaction pressure for forming the silicon carbide film is 0.1 to 20 Torr.

4. The production method for a composite material according to claim 1 , wherein the carbon source is at least one hydrocarbon of CH 4 , C 2 H 6 , C 3 H 8 , C 2 H 4 , C 2 H 2 , C 6 H 6 , and CCl 4 .

5. The production method for a composite material according to claim 1 , wherein the porous substrate is a fiber substrate including a plurality of fibers.

6. The production method for a composite material according to claim 5 , wherein the fiber is a silicon carbide fiber.

7. The production method for a composite material according to claim 1 , wherein an inside of the reaction furnace is exhausted by an exhaust unit from the upstream side to a downstream side of the reaction furnace.

Assignees

• Ihi Corp

Inventors

• OOTSUKA Yuuta
• Tanaka Yasutomo
• Inoue Hisato
• Kubota Wataru
• Ishizaki Masato
• Fukushima Yasuyuki
• MATSUKURA Izumi

Classifications

• C04B35/62863 Primary

  Silicon carbide · CPC title

• C04B35/62884 Primary

  by gas phase techniques · CPC title

• C04B35/80

  Fibres, filaments, whiskers, platelets, or the like · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• C23C16/325

  Silicon carbide · CPC title