Method of manufacturing gas sensor device

US11714057B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11714057-B2
Application numberUS-202117327825-A
CountryUS
Kind codeB2
Filing dateMay 24, 2021
Priority dateApr 28, 2017
Publication dateAug 1, 2023
Grant dateAug 1, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a gas sensor device, the method comprising: forming a first electrode and a second electrode on a substrate; forming a polythiophene film on the substrate between the first and second electrodes to be electrically coupled to the first and second electrodes by applying a solution which is obtained by dissolving polythiophene in organic solvent into the substrate and performing a first drying; bringing a cupric bromide into contact with the polythiophene film by contacting the polythiophene film and the cupric bromide; and forming the polythiophene film absorbed the cuprous bromide, the contacting the polythiophene film and the cupric bromide is performed by dropping a solution of the cupric bromide into the polythiophene film, washing the polythiophene film after a specific period of time elapses and performing a second drying. 2. The method of manufacturing a gas sensor device according to claim 1 , wherein the solution is applied into a rectangular shape having a side of a specific length.

Assignees

Inventors

Classifications

  • G01N27/125Primary

    Composition of the body, e.g. the composition of its sensitive layer · CPC title

  • of gaseous biological material, e.g. breath · CPC title

  • involving inorganic compounds or pH · CPC title

  • Physics · mapped topic

  • other than oxygen, carbon dioxide or alcohol, e.g. organic vapours · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11714057B2 cover?
A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.
Who is the assignee on this patent?
Fujitsu Ltd
What technology area does this patent fall under?
Primary CPC classification G01N27/125. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 01 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).