Silicon carbide/graphite composite and articles and assemblies comprising same

Patent metadata

Field	Value
Publication number	US-11713252-B2
Application number	US-202117396389-A
Country	US
Kind code	B2
Filing date	Aug 6, 2021
Priority date	Aug 20, 2015
Publication date	Aug 1, 2023
Grant date	Aug 1, 2023

Abstract

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

First claim

What is claimed is:

1. A method of making a silicon carbide-graphite composite, comprising contacting a graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween, wherein the chemical reaction conditions are effective to yield the silicon carbide-graphite composite, wherein the composite is characterized by any two or more characteristics selected from the group consisting of:
(i) the ratio of the thickness of the interior bulk graphite material to the thickness of the exterior silicon carbide matrix material is in a range of from 5 to 10,000;
(ii) the exterior silicon carbide matrix material has a thickness in a range of from 150 to 1000 μm;
(iii) the grain size of graphite in the silicon carbide-graphite composite is in a range of from 5 to 20 μm;
(iv) the density of the silicon carbide-graphite composite is in a range of from 1.6 to 2.4 g per cc of the composite;
(v) the coefficient of thermal expansion (CTE) of the composite is in a range of from 4 to 6.5×10 −6 /° C.;
(vi) a characterization parameter, C p , of the composite is in a range of from 0.5 to 3.2%/cm −1 , wherein C p is defined by the relationship:
C p =W g /[ S/V ]

wherein:
W g , is the percent (%) weight gain of the graphite material that is subjected to contact with silicon monoxide to effect reaction producing the composite; and
S/V is the surface-to-volume ratio of the product composite, wherein S is the surface area of the composite, in square centimeters, and V is the volume of the composite, in cubic centimeters;
(vii) the composite is devoid of any silicon carbide capping layer thereon;
(viii) the composite is a vitreous carbon-free composite;
(ix) formation of the composite has comprised conversion bonding of graphite dust grains in porosity of the interior bulk graphite material;
(x) the composite contains no free silicon; and
(xi) the composite is doped with nitrogen.

2. The method of claim 1 , wherein the contacting chemical reaction conditions comprise temperature in a range of from 1400 to 2000° C.

3. The method of claim 1 , wherein the contacting chemical reaction conditions comprise temperature in a range of from 1600 to 1900° C.

4. The method of claim 1 , wherein the contacting chemical reaction conditions comprise temperature in a range of from 1750 to 1850° C.

5. The method of claim 1 , wherein the contacting chemical reaction conditions comprise temperature in a range of from 1400 to 1800° C.

6. The method of claim 1 , wherein the contacting chemical reaction conditions comprise temperature in a range of from 1500 to 1750° C.

7. The method of claim 1 , wherein the contacting is carried out with the silicon monoxide in a gas mixture at a concentration of from 5 to 50% by volume, based on the total volume of the gas mixture.

8. The method of claim 1 , wherein the contacting chemical reaction conditions comprise pressure in a range of from 650 torr to 1.3 bar.

9. The method of claim 1 , wherein the contacting chemical reaction conditions comprise pressure that is sufficiently positive, in reference to ambient pressure to overcome pressure drop of a deposition reactor system and associated flow circuitry utilized to carry out the chemical reaction.

10. The method of claim 1 , wherein the SiO gas is generated by heating a solid mixture of carbon and silicon dioxide.

11. The method of claim 1 , wherein the graphite article is a structural article of an ion implantation system, wherein the silicon carbide matrix material of the composite provides at least a portion of surface of the structural article.

12. The method of claim 1 , wherein the graphite article is provided for the contacting with a predetermined shape or form.

13. The method of claim 12 , wherein the predetermined shape or form is provided by mechanically, chemically, and/or photonically removing material from a starting graphite article to impart the predetermined shape or form thereto.

Assignees

• Entegris Inc

Inventors

• Scoggins Troy
• Sheppard Rex Gerald
• Rashed Abuagela H
• Burr Jonathan Loyd

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title