Read threshold management and calibration

Patent metadata

Field	Value
Publication number	US-11709621-B2
Application number	US-202117230392-A
Country	US
Kind code	B2
Filing date	Apr 14, 2021
Priority date	Oct 9, 2020
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

A system and method for read threshold calibration in a non-volatile memory are provided. Physical dies in the memory are divided into groups based on device-level parameters such as time and temperature parameters. An outlier die may be identified outside of the plurality of groups based on a comparison of a bit error rate (BER) indicator for each die to a threshold. For each group of dies, a read parameter is determined for at least one die, and applied to each of the plurality of dies of the group. The read parameter may be determined based on a threshold measurement of a representative one or more word lines.

First claim

What is claimed is:

1. A method of read threshold management of a non-volatile memory comprising a plurality of physical dies, each of the plurality of physical dies comprising a plurality of physical blocks, the method comprising:
selecting, based on respective operating parameters of each of the plurality of physical dies, a group of physical dies from among the plurality of physical dies;
determining respective read parameters of each of the physical dies in the group of physical dies;
determining a compound read parameter using the respective read parameters determined for each of the physical dies in the group; and
applying the same determined compound read parameter to each of the physical dies in the group.

2. The method of claim 1 , wherein the determining the compound read parameter comprises determining a first read parameter of a first selected physical die, determining a second read parameter of a second selected physical die, and defining the read parameter as an average of at least the first read parameter and the second read parameter.

3. The method of claim 2 , further comprising:
performing read threshold calibration on each of the plurality of physical dies.

4. The method of claim 3 , wherein the performing the read threshold calibration comprises calculating a syndrome weight as an estimate of the bit error rate (BER).

5. The method of claim 3 , wherein the performing the read threshold calibration comprises performing a valley search.

6. The method of claim 1 , wherein the determining the read parameter comprises:
determining at least one device level parameter of the at least one physical die and determining the read parameter based on the at least one device level parameter.

7. The method of claim 1 , wherein the determining the read parameter comprises:
determining a first device level parameter of a first word line, determining a second device level parameter of a second word line; and
determining the read parameter based on the first device level parameter and the second device level parameter.

Assignees

• Western Digital Tech Inc

Inventors

• Avraham Dudy
• Bazarsky Alex
• Mekhanik Evgeny

Classifications

• G06F3/0655 Primary

  Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices · CPC title

• G06F3/0604

  Improving or facilitating administration, e.g. storage management · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G11C29/021 Primary

  in voltage or current generators · CPC title

• G11C29/028

  with adaption or trimming of parameters · CPC title