Semiconductor optical element

Patent metadata

Field	Value
Publication number	US-11705693-B2
Application number	US-201917421237-A
Country	US
Kind code	B2
Filing date	Dec 24, 2019
Priority date	Jan 8, 2019
Publication date	Jul 18, 2023
Grant date	Jul 18, 2023

Abstract

An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an E 12 mode, for example.

First claim

The invention claimed is:

1. A semiconductor optical device comprising:
an optical waveguide on a substrate, the optical waveguide including a core having a thickness at which a higher-order mode appears;
an active layer above the substrate, the active layer extending along the core and configured to be optically coupled to the core, wherein the core and the active layer are in physical contact with each other;
a p-type semiconductor layer and an n-type semiconductor layer in contact with the active layer above the substrate and sandwiching the active layer in a plan view; and
a resonator structure configured to confine light in the active layer.

2. The semiconductor optical device according to claim 1 , wherein the higher-order mode is an E12 mode.

3. The semiconductor optical device according to claim 1 , wherein the core is between the substrate and the active layer.

4. The semiconductor optical device according to claim 1 , wherein the core is above the active layer as viewed from a side of the substrate.

5. The semiconductor optical device according to claim 1 , wherein the core comprises a material with a refractive index of 1.5 to 2.2.

6. The semiconductor optical device according to claim 5 , wherein the core comprises SiN or SiON.

7. The semiconductor optical device according to claim 6 , wherein the core comprises deuterium.

8. The semiconductor optical device according to claim 1 , further comprising:
an n-type electrode connected to the n-type semiconductor layer; and
a p-type electrode connected to the p-type semiconductor layer.

9. The semiconductor optical device according to claim 1 , wherein the resonator structure includes a diffraction grating in the core.

10. A semiconductor optical device comprising:
an optical waveguide on a substrate, the optical waveguide including a core having a thickness at which a higher-order mode appears;
an active layer above the substrate, the active layer extending along the core and optically coupled to the core, wherein the core and the active layer are in physical contact with each other;
a p-type semiconductor layer and an n-type semiconductor layer in contact with the active layer above the substrate and sandwiching the active layer in a plan view;
an n-type electrode connected to the n-type semiconductor layer;
a p-type electrode connected to the p-type semiconductor layer; and
a resonator structure configured to confine light in the active layer, the resonator structure including a diffraction grating in the core.

11. The semiconductor optical device according to claim 10 , wherein the higher-order mode is an E12 mode.

12. The semiconductor optical device according to claim 10 , wherein the core is between the substrate and the active layer.

13. The semiconductor optical device according to claim 12 , further comprising a second core above the active layer as viewed from a side of the substrate.

14. The semiconductor optical device according to claim 10 , wherein the core is above the active layer as viewed from a side of the substrate.

15. The semiconductor optical device according to claim 10 , wherein the core comprises a material with a refractive index of 1.5 to 2.2.

16. The semiconductor optical device according to claim 10 , wherein the core comprises SiN or SiON.

17. The semiconductor optical device according to claim 16 , wherein the core comprises deuterium.

18. A method of forming a semiconductor optical device, the method comprising:
forming an optical waveguide on a substrate, the optical waveguide including a core having a thickness at which a higher-order mode appears, the higher-order mode being an E12 mode or higher;
forming an active layer above the substrate, the active layer extending along the core and being optically coupled to the core, wherein the core and the active layer are in physical contact with each other;
forming a p-type semiconductor layer and an n-type semiconductor layer in contact with the active layer above the substrate and sandwiching the active layer in a plan view; and
forming a resonator structure to confine light in the active layer.

19. The method according to claim 18 , wherein the core comprises SiN or SiON.

20. The method according to claim 18 , further comprising:
forming an n-type electrode connected to the n-type semiconductor layer; and
forming a p-type electrode connected to the p-type semiconductor layer.

Assignees

• Nippon Telegraph & Telephone

Inventors

• Aihara Takuma
• Matsuo Shinji
• Kakitsuka Takaaki
• Tsuchizawa Tai
• Hiraki Tatsuro

Classifications

• H01S5/2031 Primary

  characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities · CPC title

• H01S5/0424 Primary

  lateral current injection · CPC title

• H01S5/0651

  Mode control · CPC title

• H01S5/1032

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• H01S5/12

  the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) · CPC title