Light emitting device and light apparatus for plant growth

Patent metadata

Field	Value
Publication number	US-11700795-B2
Application number	US-202217574149-A
Country	US
Kind code	B2
Filing date	Jan 12, 2022
Priority date	May 4, 2021
Publication date	Jul 18, 2023
Grant date	Jul 18, 2023

Abstract

A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

First claim

What is claimed is:

1. A light emitting device for plant growth comprising:
a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 430 nm to 445 nm, wherein the LED chip comprises a nitride semiconductor stack having a quantum well layer and a quantum barrier layer, the quantum well layer comprises InxGa1-xN, wherein 0.112≤x≤0.130, and the quantum barrier layer comprises GaN;
a first wavelength conversion material configured to be excited by the first light, and emit a second light having a peak wavelength of 500 nm to 550 nm; and
a second wavelength conversion material configured to be excited by the first light, and emit a third light having a peak wavelength ranging from 570 nm to 610 nm,
wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

2. The light emitting device of claim 1 , wherein at least one of the first wavelength conversion material and the second wavelength conversion material comprises a phosphor selected from a group consisting of (Ga,Gd,Y,Lu)3Al5O12:Ce, La3Si6N11:Ce, (Sr,Ca,Ba)Si2O2N2:Eu, (Sr,Ba)2SiO4:Eu, (Sr,Ca)AlSiN3:Eu, (Lu,Gd,Y)3(Ga,Al)5O12:Ce, or β-SiAlON:Eu.

3. The light emitting device of claim 1 , wherein the output light emitted from the light emitting device has color coordinates located in a region defined by (0.22, 0.29), (0.35, 0.29), (0.5, 0.43), and (0.32, 0.55) in a CIE 1931 color coordinate system.

4. The light emitting device of claim 1 , wherein a color rendering index of the output light emitted from the light emitting device is 75 or less.

5. The light emitting device of claim 1 , wherein a color temperature of the output light emitted from the light emitting device ranges from 4000K to 5500K or less.

6. The light emitting device of claim 1 , further comprising a third wavelength conversion material configured to convert the first light into a fourth light having a peak wavelength of 610 nm to 680 nm.

7. The light emitting device of claim 6 , wherein the third wavelength conversion material comprises a phosphor selected from a group consisting of (Sr,Ca)AlSiN3:Eu, KxSiFy:Mn4+(2≤x≤3, 4≤y≤7) and a combination thereof.

8. The light emitting device of claim 1 , further comprising a red LED chip configured to emit a fourth light having a peak wavelength of 600 nm to 750 nm.

9. A light apparatus for plant growth, the light apparatus comprising:
a circuit board; and
a plurality of light emitting devices mounted on the circuit board,
wherein each of the plurality of light emitting devices comprises:
a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 430 nm to 445 nm, wherein the LED chip comprises a nitride semiconductor stack having a quantum well layer and a quantum barrier layer, the quantum well layer comprises InxGa1-xN, wherein 0.112≤x≤0.130, and the quantum barrier layer comprises GaN;
a first wavelength conversion material configured to be excited by the first light, and emit a second light having a peak wavelength of 500 nm to 550 nm, and
a second wavelength conversion material configured to be excited by the first light, and emit a third light having a peak wavelength ranging from 570 nm to 610 nm,
wherein a photosynthetic photon efficacy (PPE) of an output light emitted from each of the plurality of light emitting devices is 3.10 μmol/J or more.

10. The light apparatus of claim 9 , wherein at least one of the first wavelength conversion material and the second wavelength conversion material comprises (Ga,Gd,Y,Lu)3Al5O12:Ce.

11. The light apparatus of claim 9 , wherein the output light emitted from each of the plurality of light emitting devices has color coordinates located in a region defined by (0.22, 0.29), (0.35, 0.29), (0.5, 0.43), and (0.32, 0.55) in a CIE 1931 color coordinate system.

12. The light apparatus of claim 9 , wherein the plurality of light emitting devices further comprise at least one additional light emitting device configured to emit a light having a spectrum different from that of a light emitted from each of the plurality of light emitting devices.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Dongkuk
• Ko Kunyoo
• Kim Daesup
• Kim Jaechul
• Hwang Sunhwan

Classifications

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/8515

  not being in contact with the bodies · CPC title

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title