Aluminum apparatus with aluminum oxide layer and method for forming the same

Patent metadata

Field	Value
Publication number	US-11699574-B2
Application number	US-202017027304-A
Country	US
Kind code	B2
Filing date	Sep 21, 2020
Priority date	Jun 14, 2016
Publication date	Jul 11, 2023
Grant date	Jul 11, 2023

Abstract

In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

First claim

What is claimed is:

1. A method comprising:
chemically treating an aluminum body with at least one of an alkaline solution and an acid solution;
performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer, wherein a voltage value applied in the anode-oxidization is substantially constant; and
treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
the substantially constant voltage value is in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.

2. The method of claim 1 , wherein the average width of the columnar grains is in a range from 25 nm to 35 nm.

3. The method of claim 1 , wherein widths of the columnar grains are substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

4. The method of claim 3 , wherein the widths of the columnar grains are substantially constant from the outer surface of the aluminum oxide layer to an interface between the aluminum body and the aluminum oxide layer.

5. The method of claim 1 , wherein an average growth rate of the aluminum oxide layer in the anode-oxidization is in a range from 30 nm/min to 70 nm/min.

6. The method of claim 1 , wherein the chemically treating comprises treating with alkaline and treating with acid.

7. The method of claim 6 , wherein in the chemically treating the aluminum body, the aluminum body is treated with the alkaline solution and then treated with the acid solution.

8. The method of claim 6 , wherein in the chemically treating the aluminum body, the aluminum body is treated with the acid solution and then treated with the alkaline solution.

9. The method of claim 6 , wherein in the chemically treating the aluminum body, the aluminum body is treated with the alkaline solution for 60 seconds to 120 seconds at a temperature of 50° C. to 70° C. and treated with the acid solution for 10 seconds to 50 seconds at a temperature of 20° C. to 40° C.

10. The method of claim 1 , wherein an electrolyte in the anode-oxidization includes H 2 SO 4 with a weight percent in a range from 10% to 20%.

11. The method of claim 1 , wherein the anode-oxidization is performed at a temperature of −20° C. to 5° C.

12. The method of claim 1 , wherein a current value during the anode-oxidization is in a range from 1.0 A to 2.0 A.

13. A method comprising:
preparing an aluminum body;
polishing a surface of the aluminum body;
chemically treating the surface-polished aluminum body with an alkaline solution and an acid solution;
performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer; and
treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
the anode-oxidization is performed with a substantially constant voltage value in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.

14. The method of claim 13 , wherein after the polishing, the surface-polished aluminum body has a surface roughness Ra from 0.5 μm to 1.5 μm.

15. The method of claim 13 , wherein in the chemically treating the aluminum body, the aluminum body is treated with the alkaline solution for 60 seconds to 120 seconds at a temperature of 50° C. to 70° C. and treated with the acid solution for 10 seconds to 50 seconds at a temperature of 20° C. to 40° C.

16. The method of claim 15 , wherein in the chemically treating the aluminum body, the aluminum body is treated with the alkaline solution and then treated with the acid solution.

17. A method comprising:
preparing an aluminum body;
annealing the aluminum body at a temperature of 200° C. to 400° C.;
polishing a surface of the aluminum body after the annealing;
chemically treating the surface-polished aluminum body with at least one of an alkaline solution and an acid solution;
performing anode-oxidization on the chemically treated aluminum body to form an aluminum oxide layer; and
treating the aluminum oxide layer with hot water at a temperature of more than 75° C. or steam, wherein:
the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
the anode-oxidization is performed with a substantially constant voltage value in a range from 15 V to 25 V and variation during the anode-oxidization is equal to or less than 10%.

18. The method of claim 17 , wherein the annealing is performed for one hour to 50 hours.

19. The method of claim 17 , wherein the aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

20. The method of claim 17 , wherein an electrolyte in the anode-oxidization includes H 2 SO 4 and an oxalic acid.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Ru-Chien
• Chen Bing-Hung
• Koai Keith Kuang-Kuo

Classifications

• H01J37/32495 Primary

  Means for protecting the vessel against plasma · CPC title

• C25D11/08

  containing inorganic acids · CPC title

• C25D11/16

  Pretreatment {, e.g. desmutting} · CPC title

• C25D11/045

  for forming AAO templates · CPC title

• C25D11/246 Primary

  for sealing layers · CPC title