Semiconductor module comprising transistor chips, diode chips and driver chips arranged in a common plane
US-2018211917-A1 · Jul 26, 2018 · US
US11698394B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11698394-B2 |
| Application number | US-202016826869-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 23, 2020 |
| Priority date | Mar 22, 2019 |
| Publication date | Jul 11, 2023 |
| Grant date | Jul 11, 2023 |
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A current sensor is described comprising an integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad and a housing comprising material embedding the integrated circuit arranged for allowing electric connection to the at least two contact pads of the active side of the integrated circuit. The housing comprises at least one conductive via disposed outside the integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the integrated circuit.
Opening claim text (preview).
The invention claimed is: 1. A current sensor comprising: a semiconductor integrated circuit for sensing electric currents comprising an active side, the active side comprising at least one sensing element and at least one contact pad; a housing comprising material including mold compound embedding the semiconductor integrated circuit arranged for allowing electric connection to the at least one contact pad of the active side of the semiconductor integrated circuit; a primary leadframe for carrying current for sensing; and a set of electric contacts for signal interchange; wherein the housing comprises at least one conductive via disposed outside the semiconductor integrated circuit and connected to the at least one contact pad, for distributing signals from the at least one contact pad through the housing away from the active side of the semiconductor integrated circuit, wherein the active side of the semiconductor integrated circuit faces the primary leadframe for sensing current therefrom, the semiconductor integrated circuit being electrically isolated from the primary leadframe, the at least one contact pad of the semiconductor integrated circuit further being electrically connected to electric contacts of the set through the conductive vias, for transferring measurement signals to a secondary leadframe. 2. The current sensor according to claim 1 , further comprising a redistribution layer for electrically connecting at least one contact pad to the conductive vias. 3. The current sensor according to claim 1 , further comprising a redistribution layer providing electric connection between the conductive via and the electric contacts of the set. 4. The current sensor according to claim 1 , further comprising isolation material between the active side and the primary leadframe. 5. The current sensor according to claim 1 , further comprising isolation material comprising at least one polyimide layer and/or a polyimide tape between the conductive via and the electric contacts of the set without blocking the electric contacts. 6. The current sensor according to claim 1 , wherein the sensor comprises a further circuit embedded in the housing and directly or indirectly electrically connected through the at least one conductive via. 7. A method of fabrication of a sensor comprising: providing a semiconductor integrated circuit comprising an active side, the active side comprising at least one sensing element and at least one contact pad; disposing at least the semiconductor integrated circuit on a carrier substrate; providing a housing including at least one conductive via and mold compound, by overmolding the semiconductor integrated circuit, the overmolding being adapted for allowing provision of electric connection to the at least one contact pad of the active side of the semiconductor integrated circuit; providing electric connection between the at least one contact pad and the at least one conductive via, thus obtaining a sensor where electric signals generated on the active side of the semiconductor integrated circuit can be redirected through the housing and away from the active side; providing a primary leadframe for providing current to be measured, and assembling the housing and the semiconductor integrated circuit thereon with the active side of the semiconductor integrated circuit facing the primary leadframe, the semiconductor integrated circuit being electrically isolated from the primary leadframe; providing a set of electric contacts, and electrically connecting at least one of the electric contacts to the conductive via. 8. The method according to claim 7 , wherein providing a housing including at least one conductive via comprises providing at least one conductive via by fabricating at least one conductive via on a dielectric substrate, and separating a portion of dielectric material embedding conductive material, thus providing at least one prefabricated conductive via, and subsequently overmolding the semiconductor integrated circuit and the at least one conductive via. 9. The method according to claim 7 , further comprising providing at least one layer of isolation material between at least the primary leadframe and the semiconductor integrated circuit, for example a layer of polyimide, and/or a polyimide tape. 10. The method according to claim 7 , wherein electrically connecting the electric contacts to the conductive via comprises providing a redistribution layer on the conductive via and electrically connecting the redistribution layer to the electric contacts of the set. 11. The method according to claim 7 , wherein providing electric connection between the contact pad and the conductive via comprises providing a redistribution layer in electric contact with the conductive via and the contact pad. 12. The method according to claim 11 , wherein providing a redistribution layer comprises providing a redistribution layer by metal deposition, or wherein providing a redistribution layer comprises providing a passivation layer and thereafter comprises providing a redistribution layer by metal deposition. 13. The method according to claim 7 , wherein the method further comprises: providing a further circuit comprising an active side and comprising a further sensing element and at least one further contact pad; disposing the further circuit on the carrier substrate aside the at least one semiconductor integrated circuit; wherein said providing a housing comprises overmolding also the further circuit, the overmolding also being adapted for allowing provision of electric connection to the at least one contact pad of the active side of the further circuit; and wherein the method comprises providing electric connection between the at least one contact pad of the further circuit and the at least one conductive via, thus obtaining a sensor where electric signals generated on the active side of the further circuit can be redirected through the housing and away from the active side.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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