Light sensor using pixel optical diffraction gratings having different pitches

Patent metadata

Field	Value
Publication number	US-11698296-B2
Application number	US-202017024202-A
Country	US
Kind code	B2
Filing date	Sep 17, 2020
Priority date	Sep 25, 2019
Publication date	Jul 11, 2023
Grant date	Jul 11, 2023

Abstract

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

First claim

The invention claimed is:

1. A light sensor, comprising:
a semiconductor substrate; and
a plurality of pixels, wherein each pixel comprises:
a photoconversion zone extending in the semiconductor substrate between a front face and a back face of the semiconductor substrate;
an optical diffraction grating positioned over the back face of the semiconductor substrate and facing the photoconversion zone of the pixel; and
a wall configured to be absorbent at operating wavelengths of the sensor, said wall positioned to laterally surround the optical diffraction grating of the pixel and extend heightwise from the back face of the semiconductor substrate at least up to a level of the optical diffraction grating of the pixel;

wherein the optical diffraction grating of one pixel of said plurality of pixels and the optical diffraction grating of another pixel of said plurality of pixels have different pitches.

2. The sensor according to claim 1 , wherein the optical diffraction grating for each pixel of said plurality of pixels is located at a same distance from the back face of the semiconductor substrate.

3. The sensor according to claim 1 , wherein each pixel comprises an optical device configured so that light reaches the optical diffraction grating of the pixel with a normal angle of incidence.

4. The sensor according to claim 3 , wherein said optical device of each pixel comprises a first converging lens and a second converging lens, the first and second lenses being positioned one above the other, above and opposite the optical diffraction grating of said pixel.

5. The sensor according to claim 1 , wherein part of the photoconversion zone configured to receive light at the back face of the semiconductor substrate has an identical surface for each pixel of said plurality of pixels.

6. A light sensor, comprising:
a semiconductor substrate; and
a plurality of pixels, wherein each pixel comprises:
a photoconversion zone extending in the semiconductor substrate between a front face and a back face of the semiconductor substrate;
an optical diffraction grating positioned over the back face of the semiconductor substrate and facing the photoconversion zone of the pixel; and
a device configured to prevent a zero order propagation of the light transmitted by the optical diffraction grating of the pixel from reaching the photoconversion zone of the pixel;

wherein the optical diffraction grating of one pixel of said plurality of pixels and the optical diffraction grating of another pixel of said plurality of pixels have different pitches.

7. The sensor according to claim 6 , wherein the device configured to prevent the zero order propagation comprises:
an electrically insulating material penetrating the semiconductor substrate from the back face of the semiconductor substrate and extending into the photoconversion zone of the pixel and being located on a zero order path of the light transmitted by the optical diffraction grating of the pixel.

8. The sensor according to claim 6 , wherein the device configured to prevent the zero order propagation comprises:
a material absorbing at the operating wavelengths of the sensor and resting in contact with the back face of the semiconductor substrate and being positioned on a zero order path of the light transmitted by the optical diffraction grating of the pixel.

9. The sensor according to claim 1 , wherein the optical diffraction grating of each pixel comprises:
a layer of a first material opaque at the operating wavelengths of the sensor; and
a plurality of openings passing through the layer of the first material, the openings being distributed along a pitch of said optical diffraction grating and preferably being concentric and circular.

10. The sensor according to claim 1 , wherein the optical diffraction grating of each pixel comprises:
a layer of a first material having an optical index at the operating wavelengths of the sensor that is at least one and a half times greater than an optical index of a second material that is in contact with the first material; and
a plurality of openings passing through the layer of the first material, the openings being distributed along a pitch of said optical diffraction grating and preferably being concentric and circular.

11. The sensor according to claim 1 , wherein the optical diffraction grating of each pixel comprises:
a layer of a first material opaque at the operating wavelengths of the sensor; and
a plurality of openings passing through the layer of the first material, the openings being distributed along a pitch of said optical diffraction grating and preferably being parallel to one another.

12. The sensor according to claim 1 , wherein the optical diffraction grating of each pixel comprises:
a layer of a first material having an optical index at the operating wavelengths of the sensor that is at least one and a half times greater than an optical index of a second material and that is covering and is in contact with the first material; and
a plurality of openings passing through the layer of the first material, the openings being distributed along a pitch of said optical diffraction grating and preferably being parallel to one another.

13. The sensor according to claim 1 , wherein said semiconductor substrate further includes a processing circuit configured to receive, for each of said pixels, an output signal of the pixel representative of a quantity of light received by the pixel during an illumination phase of the sensor.

14. The sensor according to claim 13 , wherein the processing circuit is configured to:
determine from the output signals of at least one pair of pixels of the sensor whose diffraction gratings have different pitches a portion of light to be analyzed received in a wavelength range determined by the pitches of the diffraction gratings of the pair of pixels.

15. The sensor according to claim 13 , wherein the processing circuit is configured to:
determine a type of light received by the sensor during the illumination phase by comparing a set of values of said signals to sets of calibration values.

16. A method for manufacturing a sensor, comprising:
depositing a layer of a material transparent at operating wavelengths of the sensor on a back face of a semiconductor substrate provided with photoconversion zones extending in the semiconductor substrate between a front face and the back face of the semiconductor substrate;
depositing a layer of a first material on the layer of the transparent material;
etching openings through the layer of first material so as to define an optical diffraction grating therein positioned above each photoconversion zone;
depositing a layer of a second material that covers the first and is in contact with the first material;
wherein said first material is one of: opaque at said operating wavelengths or has an optical index at said operating wavelengths that is at least one and a half times greater than an optical index of the second material;
wherein the optical diffraction grating for two different photoconversion zones have different pitches;
etching trenches extending through both the layer of the second material and the layer of transparent material to reach said back face, wherein the trenches have a shape that laterally surrounds each optical diffraction grating; and
filling said trenches with a material that is absorbent at said operating wavelengths.

17. A method for analysis of light sensed by a sensor, comprising:
receiving light to be analyzed by a plurality of pixels of the sensor, wherein each pix

Assignees

• St Microelectronics Crolles 2 Sas
• St Microelectronics Sa

Inventors

• Monfray Stephane
• Le Neel Olivier
• Boeuf Frederic

Classifications

• H01L31/02327

  Electricity · mapped topic

• G01J2001/444

  Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting · CPC title

• G02B5/1828

  having means for producing variable diffraction (controlling the direction of light by means of one or more diffracting elements G02B26/0808; acousto-optical elements G02F1/11, G02F1/33; electro- or magneto-optical diffraction G02F1/292, G02F1/2955) · CPC title

• G01J1/0411 Primary

  using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction · CPC title

• H01L31/1013

  Electricity · mapped topic