Liquid crystal composition and liquid crystal display device
US-2016244668-A1 · Aug 25, 2016 · US
US11697666B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11697666-B2 |
| Application number | US-202217720704-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2022 |
| Priority date | Apr 16, 2021 |
| Publication date | Jul 11, 2023 |
| Grant date | Jul 11, 2023 |
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The present disclosure describes methods of preparing carbanucleosides.
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What is claimed is: 1. A method of preparing a compound of Formula (II-a) or Formula (II-b): comprising: (a) preparing a first input mixture, wherein the first input mixture comprises an amine protecting agent, a first base, a metalating agent, and a compound of Formula (IV): to provide a first output mixture; and (b) preparing a second input mixture comprising the first output mixture and a compound of Formula (V) to provide a second output mixture comprising the compound of Formula (II-a) or Formula (II-b), wherein the compound of Formula (V) has the structure: wherein R a is M a is Li or MgX a; X a is Cl, Br, or I; R b is hydrogen or —OH; and X b is Cl, Br, or I. 2. The method of claim 1 , for preparing the compound of Formula (II-a) or Formula II b): comprising: (a) preparing the first input mixture in a first reactor, wherein the first input mixture comprises an amine protecting agent, the first base, the metalating agent, and the compound of Formula (IV): wherein the first reactor provides the first output mixture; and (b) adding the first output mixture and the compound of Formula (V) to form the second input mixture in a second reactor, wherein the compound of Formula (V) has the structure: wherein R a is M a is Li or MgX a; X a is Cl, Br, or I; R b is hydrogen or —OH; X b is Cl, Br, or I; and the second reactor provides the second output mixture comprising the compound of Formula (II-a) or Formula (II-b). 3. The method of claim 2 , wherein the method comprises: (al) forming a third reaction mixture comprising the compound of Formula (III) having the structure: the amine having the formula and iPrMgCl, thereby forming the compound of Formula (V) having the structure: (a) adding the first input mixture to the first reactor, wherein the first input mixture comprises TMS-Cl, PhMgCl, iPrMgCl, and the compound of Formula (IV) having the structure: wherein the first reactor provides the first output mixture; and (b) adding the first output mixture and the compound of Formula (V) to the second reactor thereby forming the compound of Formula (II-a) or Formula (II-b) having the structure: 4. The method of claims 2 , wherein the first reactor and the second are different reactors. 5. The method of claim 2 , wherein the first reactor and the second reactor are the same type of reactor. 6. The method of claim 2 , wherein the first reactor and the second reactor are different types of reactors. 7. The method of claims 2 , wherein the first reactor and the second reactor are a single reactor. 8. The method of claim 7 , wherein the single reactor is a continuous flow reactor, a plug flow reactor, a continuous tubular reactor, or a mixed flow reactor. 9. The method of claim 7 , wherein the first reactor is a first reaction zone in the single reactor and the second reactor is a second reaction zone in the single reactor. 10. The method of claim 1 , wherein the amine protecting agent is trifluoroacetic anhydride, di(tert-butyl) dicarbonate, trimethylsilyl chloride (TMSCl), triethylsilyl chloride (TESCl), triisopropylsilyl chloride, tert-butyldimethylsilyl chloride (TBDMSCl), tert-butyldiphenylsilyl chloride (TBDPSCl), triphenylsilyl chloride, or 1,2-bis (chlorodimethylsilyl)ethane. 11. The method of claim 1 , wherein the first base is R 1 MgX 1 or R 1 Li; R 1 is methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, or phenyl; and X 1 is Cl, Br, or I. 12. The method of claim 1 , wherein the metalating agent is R 2 MgX 2 or R 2 Li; R 2 is methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, or phenyl; and X 2 is Cl, Br, or I. 13. The method of claim 1 , wherein the amine protecting agent is trimethylsilyl chloride (TMSCl); the first base is PhMgCl; the metalating agent is iPrMgCl; and M a is MgCl. 14. The method of claim 1 , wherein the first input mixture further comprises a first solvent that is tetrahydrofuran (THF), 2-methyltetrahydrofuran, methyl tert-butyl ether, cyclopentyl methyl ether, toluene, n-heptane, 1,2-dichloroethane, chloroform, or chlorobenzene, or a combination thereof. 15. The method of claim 1 , wherein the second input mixture further comprises a second solvent that is tetrahydrofuran (THF), 2-methyltetrahydrofuran, methyl tert-butyl ether, cyclopentyl methyl ether, toluene, n-heptane, 1,2-dichloroethane, chloroform, or chlorobenzene, or a combination thereof. 16. The method of claim 1 , further comprising combining the second output mixture and an acid. 17. The method of claim 16 , wherein the acid comprises formic acid, acetic acid, citric acid, propanoic acid, butyric acid, or benzoic acid. 18. The method of claim 1 , further comprising preparing the compound of Formula (V), the method comprising: (al) forming a third reaction mixture comprising a compound of Formula (III): an amine of the formula H-R a ; and a third base that is R 3 MgX 3 or R 3 Li; wherein R 3 is methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, or phenyl; and X 3 is Cl, Br, or I; thereby providing the compound of Formula (V). 19. The method of claim 18 , wherein the amine has the formula and the third base is iPrMgCl. 20. The method of claim 18 , wherein the third reaction mixture further comprises a third solvent that is tetrahydrofuran (THF), 2-methyltetrahydrofuran, methyl tert-butyl ether, cyclopentyl methyl ether, toluene, n-heptane, 1,2-dichloroethane, chloroform, or chlorobenzene, or a combination thereof. 21. The method of claim 1 , wherein the yield of the compound of Formula (II-a) or Formula (II-b) is from about 60% to about 90%. 22. The method of claim 1 , wherein the purity of the compound of Formula (II
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