Method for producing InP quantum dot precursor and method for producing InP-based quantum dot

Patent metadata

Field	Value
Publication number	US-11692134-B2
Application number	US-202017601753-A
Country	US
Kind code	B2
Filing date	Mar 26, 2020
Priority date	Apr 16, 2019
Publication date	Jul 4, 2023
Grant date	Jul 4, 2023

Abstract

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot.(R is as defined in the specification.)

First claim

The invention claimed is:

1. A method for producing an InP quantum dot precursor from a phosphorus source and an indium source, wherein a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less:

wherein each R is independently an alkyl group having 1 or more and 5 or less carbon atoms or an aryl group having 6 or more and 10 or less carbon atoms,

wherein R is the same as in Formula (1)

is used as the phosphorus source.

2. The method for producing an InP quantum dot precursor according to claim 1 , wherein a silylphosphine compound represented by the Formula (1) with a content of a compound represented by the following Formula (3) of 0.1 mol % or less:

wherein R is the same as in Formula (1)

is used as the phosphorus source.

3. The method for producing an InP quantum dot precursor according to claim 1 , wherein a silylphosphine compound represented by the Formula (1) with a content of a compound represented by the following Formula (4) of 0.5 mol % or less:

wherein R is the same as in Formula (1)

is used as the phosphorus source.

4. The method for producing an InP quantum dot precursor according to claim 1 , wherein a silylphosphine compound represented by the Formula (1) with a content of a compound represented by the following Formula (5) of 0.05 mol % or less:

wherein R is the same as in Formula (1)

is used as the phosphorus source.

5. The method for producing an InP quantum dot precursor according to claim 1 , a silylphosphine compound represented by the Formula (1) with a content of a compound represented by the following Formula (6) of 0.05 mol % or less:

wherein R is the same as in Formula (1)

is used as the phosphorus source.

6. The method for producing an InP quantum dot precursor according to claim 1 , wherein a silylphosphine compound represented by Formula (1) with a content of a compound represented by the following Formula (7) of 0.2 mol % or less:

wherein R is the same as in Formula (1)

is used as the phosphorus source.

7. The method for producing an InP quantum dot precursor according to claim 1 , wherein at least one selected from the group consisting of indium acetate, indium laurate, indium myristate, indium palmitate, indium stearate and indium oleate is used as the ndium source.

8. The method for producing an InP quantum dot precursor according to claim 1 , wherein an indium carboxylate with no absorption peak derived from a hydroxyl group observed in the range of 1500 cm −1 or more and 1700 cm −1 or less in IR spectrum is used as the indium source.

9. The method for producing an InP quantum dot precursor according to claim 1 , wherein a reaction between the phosphorus source and the indium source is performed at a temperature in the range of 20° C. or more and 150° C. or less.

10. The method for producing an InP quantum dot precursor according to claim 1 , wherein the reaction between the phosphorus source and the indium source is performed in an organic solvent.

11. The method for producing an InP quantum dot precursor according to claim 1 , wherein the reaction between the phosphorus source and the indium source is performed in the presence of a trialkylphosphine.

12. A method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor obtained by the method according to claim 1 to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot.

13. A method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor obtained by the method according to claim 1 together with a compound containing an element source M (M is at least one selected from the group consisting of Be, Mg, Ca, Mn, Cu, Zn, Cd, B, Al, Ga, N, As, Sb and Bi) other than a phosphorous source and an indium source to a temperature of 200° C. or more and 350° C. or less to obtain a composite quantum dot of In, P and M.

14. A method for producing an InP-based quantum dot comprising surface treating a quantum dot obtained by the method according to claim 12 with a metal-containing compound or a halogen-containing compound.

15. The method for producing an InP-based quantum dot according to claim 14 , wherein the quantum dot is surface treated with the metal-containing compound, wherein the metal-containing compound is a metal carboxylate.

16. A method for producing an InP-based quantum dot, wherein a quantum dot obtained by the method according to claim 12 is used as a core, and the core is coated with a coating compound other than InP to obtain a quantum dot having a core-shell structure.

17. A method for producing an InP-based quantum dot, wherein a quantum dot having a core-shell structure obtained by the method according to claim 16 is further surface treated with a metal-containing compound or a halogen containing compound.

18. The method for producing an InP-based quantum dot according to claim 17 , wherein the quantum dot is surface treated with the metal-containing compound, wherein the metal-containing compound is a metal carboxylate.

Assignees

• Nippon Chemical Ind

Inventors

• Nakatsui Kazuhiro
• TSUZUKIISHI Taiki
• Sakanoue Tomo

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C09K11/70 Primary

  containing phosphorus · CPC title

• C07F9/06

  without P—C bonds · CPC title

• C01B25/087

  of gallium or indium · CPC title