Wafer chucking system for advanced plasma ion energy processing systems
US-9435029-B2 · Sep 6, 2016 · US
US11689107B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11689107-B2 |
| Application number | US-202117213230-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2021 |
| Priority date | Feb 28, 2014 |
| Publication date | Jun 27, 2023 |
| Grant date | Jun 27, 2023 |
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A high voltage power system is disclosed. In some embodiments, the high voltage power system includes a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a frequency greater than 1 kHz; and a bias compensation circuit arranged in parallel with the output. In some embodiments, the bias compensation circuit can include a blocking diode; and a DC power supply arranged in series with the blocking diode.
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That which is claimed: 1. A high voltage power system comprising: a high voltage pulsing power supply comprising a plurality of switches; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; and a sink stage electrically coupled with the output, wherein the sink stage dumps energy from the output, sinks current from the output, and/or rapidly reverses current flow of any energy stored in a capacitive load coupled with the output. 2. The high voltage power system according to claim 1 , further comprising a capacitive load coupled with the output. 3. The high voltage power system according to claim 1 , further comprising a bias compensation circuit arranged in parallel with the output the output, the bias compensation circuit comprising: a bias compensation diode; and a DC power supply arranged in series with the bias compensation diode. 4. The high voltage power system according to claim 3 , wherein the bias compensation circuit comprises a switch electrically coupled with the DC power supply. 5. The high voltage power system according to claim 4 , wherein the switch comprises a plurality of switches arranged in series. 6. The high voltage power system according to claim 1 , further comprising a plasma chamber coupled with the output. 7. The high voltage power system according to claim 1 , wherein the high voltage pulsing power supply comprises a nanosecond pulser. 8. The high voltage power system according to claim 3 , wherein the bias compensation circuit comprises a high voltage switch disposed across the bias compensation diode, wherein the high voltage switch is configured to be open when the high voltage pulsing power supply is pulsing, and wherein the high voltage switch is configured to be closed when the high voltage pulsing power supply is not pulsing. 9. A high voltage power system and plasma chamber comprising: a high voltage pulsing power supply, wherein the high voltage power supply comprises a plurality of switches arranged in series and a transformer; an output electrically coupled with the high voltage pulsing power supply and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 2 kHz; a plasma chamber coupled with the output; a sink stage electrically coupled with the output that dumps energy, sinks current, and/or rapidly reverses current flow of any energy stored in the plasma chamber. 10. The high voltage power system and plasma chamber according to claim 9 , further comprising a bias compensation capacitor arranged across at least the high voltage switch. 11. The high voltage power system and plasma chamber according to claim 9 , wherein the high voltage switch comprises a plurality of switches arranged in series and having a plurality of voltage sharing resistors such that each voltage sharing resistor of the plurality of voltage sharing resistors is arranged across a corresponding switch of the plurality of switches. 12. The high voltage power system and plasma chamber according to claim 9 , wherein the high voltage pulsing power supply comprises a nanosecond pulser and a transformer. 13. The high voltage power system and plasma chamber according to claim 9 , further comprising: a DC power supply; and a high voltage switch in series with the DC power supply and the high voltage switch and the DC power supply are in parallel with the output, wherein the high voltage switch is configured to turn off when the high voltage pulsing power supply is pulsing, and the high voltage switch is turned on when the high voltage pulsing power supply is not pulsing.
Frequency selective two-port networks · CPC title
in a bridge configuration · CPC title
with galvanic isolation between input and output of both the power stage and the feedback loop · CPC title
the switching device being a semiconductor device · CPC title
Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title
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