Method of manufacturing epitaxy substrate

Patent metadata

Field	Value
Publication number	US-11688628-B2
Application number	US-202117375008-A
Country	US
Kind code	B2
Filing date	Jul 14, 2021
Priority date	Apr 3, 2018
Publication date	Jun 27, 2023
Grant date	Jun 27, 2023

Abstract

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

First claim

What is claimed is:

1. A method of manufacturing an epitaxy substrate, the method comprising:
providing a handle substrate;
performing a beveling treatment on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm;
performing an ion implantation process on a first surface of the device substrate to form an implantation region within the first surface; and
bonding a second surface of the device substrate to the handle substrate to form the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

2. The method of manufacturing an epitaxy substrate of claim 1 , wherein a distance between the implantation region and the first surface is 10 nm to 95 nm.

3. The method of manufacturing an epitaxy substrate of claim 1 , wherein a method of providing the handle substrate comprises doping carbon, nitrogen or a combination thereof during crystal growth.

4. The method of manufacturing an epitaxy substrate of claim 1 , further comprising, after providing the handle substrate, forming a protective layer on a surface of the handle substrate that is not bonded to the device substrate.

5. The method of manufacturing an epitaxy substrate of claim 1 , wherein a method of bonding the second surface of the device substrate to the handle substrate further comprises performing the bonding between the second surface of the device substrate and the handle substrate through a bonding layer.

6. The method of manufacturing an epitaxy substrate of claim 5 , further comprising, before bonding the second surface of the device substrate to the handle substrate, forming a charge trapping layer on a surface of the handle substrate that is bonded to the device substrate.

7. The method of manufacturing an epitaxy substrate of claim 1 , wherein a resistivity of the device substrate is greater than 100 ohm-cm.

8. The method of manufacturing an epitaxy substrate of claim 1 , wherein an error value of crystal orientation of the device substrate is less than ±0.05 degree.

9. The method of manufacturing an epitaxy substrate of claim 1 , wherein the bonding angle is 100° to 170°.

10. The method of manufacturing an epitaxy substrate of claim 1 , wherein the oxygen content of the device substrate is less than 5 ppma.

11. The method of manufacturing an epitaxy substrate of claim 1 , wherein a resistivity of the device substrate is greater than a resistivity of the handle substrate.

12. The method of manufacturing an epitaxy substrate of claim 11 , wherein after annealing at 450° C. for one hour, the resistivity of the device substrate is greater than the resistivity of the handle substrate.

13. The method of manufacturing an epitaxy substrate of claim 11 , wherein after a heat treatment at 720° C. for two minutes, the resistivity of the device substrate is greater than the resistivity of the handle substrate.

14. The method of manufacturing an epitaxy substrate of claim 1 , wherein a diameter of the handle substrate and a diameter of the second surface of the device substrate are different by 0.2 mm or more.

15. The method of manufacturing an epitaxy substrate of claim 1 , wherein a maximum deformation amount of the handle substrate is less than 6.5 mm.

Assignees

• Globalwafers Co Ltd

Inventors

• Shih Ying-Ru
• Chuang Chih-Yuan
• Lee Chi-Tse
• Fan Chun-I
• Hsu Wen-Ching

Classifications

• H10P90/128

  by edge treatment, e.g. chamfering · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914 Primary

  using bonding · CPC title