Cell accommodating chip and screening method using the cell accommodating chip
US-2019039070-A1 · Feb 7, 2019 · US
US11688596B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11688596-B2 |
| Application number | US-202117175302-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2021 |
| Priority date | Feb 12, 2021 |
| Publication date | Jun 27, 2023 |
| Grant date | Jun 27, 2023 |
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The present disclosure relates to a lattice substrate adapted for use in direct ionization mass spectrometry. The substrate may have a plurality of tessellated unit cells forming an integral structure. Each tessellated unit cell may have a dimension of no more than about 1.5 mm and may include a plurality of pores arranged in an ordered pattern. The substrate may further include a form factor suitable for use with a direct ionization mass spectrometry system.
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What is claimed is: 1. A lattice substrate adapted for use in direct ionization mass spectrometry, the substrate comprising: a plurality of tessellated unit cells forming an integral structure, the tessellated unit cells each being formed by a plurality of intersecting filaments; each said tessellated unit cell having a dimension of no more than about 1500 μm, and including a first plurality of voids formed by the intersecting filaments, the first plurality of voids being arranged in a first ordered pattern; each said filament including a secondary lattice structure having a second plurality of voids formed by a plurality of struts that extend non-parallel to one another in three dimensions, the second plurality of voids also forming a second ordered three dimensional pattern; and a form factor suitable for use with a direct ionization mass spectrometry system. 2. The substrate of claim 1 , wherein each said tessellated unit cell comprises an Octet-truss shape. 3. The substrate of claim 1 , wherein struts of the secondary lattice structure comprise a plurality of intersecting struts which form the second plurality of voids. 4. The substrate of claim 3 , wherein each one of said plurality of intersecting struts has a diameter in a range of between 100 microns and 300 nanometers. 5. The substrate of claim 1 , wherein each one of said intersecting filaments has a diameter in a range between 500 microns and 10 microns. 6. The substrate of claim 1 , wherein the tessellated unit cells differ in size along a dimension of the substrate, to provide an engineered porosity to the substrate over a dimension thereof. 7. The substrate of claim 6 , wherein at least some of the tessellated unit cells comprise an Octet-truss shape. 8. The substrate of claim 1 , wherein the tessellated unit cells differ in size along a length dimension of the substrate. 9. The substrate of claim 1 , wherein the substrate includes: a length of no more than about 29.5 mm; a width of no more than about 6 mm; a thickness of no more than about 500 microns; and a pointed end at one outermost end thereof. 10. The substrate of claim 9 , wherein the tessellated unit cells each comprise Octet-truss shaped unit cells having a dimension of about 500 microns in each of length, width and height, and each one of the first plurality of voids forming a pyramid shaped void. 11. A lattice substrate adapted for use in direct ionization mass spectrometry, the substrate comprising: a plurality of tessellated unit cells forming an integral, elongated flat structure with first and second ends, and one of the first and second ends forming a pointed end; each said tessellated unit cell having a dimension of no more than about 1.5 mm, and each said tessellated unit cell forming a plurality of internal voids acting as pores, with the pores arranged in an ordered pattern along a length of the substrate; the substrate including a form factor with a length and width each being greater than a thickness thereof; and the tessellated unit cells including Octet-truss shaped unit cells. 12. The lattice substrate of claim 11 , wherein the form factor includes: a length of no more than about 25 mm; and a thickness of no more than about 500 microns. 13. The lattice substrate of claim 12 , wherein the form factor includes a width of no more than about 20 mm. 14. The substrate of claim 11 , wherein the first plurality of voids within each said tessellated unit cell creates an engineered, varying porosity over a length of the substrate. 15. A method of constructing a lattice substrate adapted for use in direct ionization mass spectrometry, the method including: forming a substrate having a plurality of tessellated unit cells, each one of the tessellated unit cells having a plurality of intersecting filaments and the plurality of tessellated unit cells forming an integral structure; forming the tessellated unit cells such that each has a dimension of no more than about 1.5 mm, and such that each one of said tessellated unit cells includes a first plurality of voids arranged in an ordered pattern; further forming each said intersecting filament with a secondary lattice structure, the secondary lattice structure having a plurality of struts that extend and intersect in three non-parallel dimensions to form a second plurality of voids therein; and further forming the substrate with a form factor suitable for use with a direct ionization mass spectrometry system. 16. The method of claim 15 , wherein forming the substrate comprises creating the substrate with a three-dimensional printing process using a least one of a polymer, a ceramic or a metal. 17. A lattice substrate adapted for use in direct ionization mass spectrometry, the substrate comprising: a plurality of tessellated unit cells having a plurality of intersecting filaments forming an integral structure; each said tessellated unit cell including a first plurality of voids, formed by the intersecting filaments, where the first plurality of voids extend in three dimensions in a first ordered pattern; each said filament comprises of a secondary lattice structure, with the secondary lattice structing including a plurality of intersecting struts extending non-parallel to one another in three dimensions, and forming a second plurality of voids extending in a three dimensional, second ordered pattern therewithin; and a form factor suitable for use with a direct ionization mass spectrometry system.
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