Method of cleaning reaction tube, method of manufacturing semiconductor device, and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11685993-B2
Application number	US-202117155877-A
Country	US
Kind code	B2
Filing date	Jan 22, 2021
Priority date	Jan 23, 2020
Publication date	Jun 27, 2023
Grant date	Jun 27, 2023

Abstract

There is provided a technique that includes a first annealing step of annealing the reaction tube; a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration; a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water; a second annealing step of annealing the reaction tube; a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water.

First claim

What is claimed is:

1. A method of cleaning a reaction tube, comprising:
a first annealing step of annealing the reaction tube;
a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration;
a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water, wherein performing the first rinsing step one or more times is set to be a first cycle, and the first cycle is performed one or more times;
a second annealing step of annealing the reaction tube;
a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and
a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water,
wherein the second rinsing step is performed two or more times, and
wherein each of the first rinsing step and the second rinsing step includes:
a wetting step of wetting the reaction tube by contacting with the pure water;
a rocking step of rocking the reaction tube in contact with the pure water; and
a rotating step of rotating the reaction tube in contact with the pure water in a circumferential direction of the reaction tube.

2. The method of claim 1 , wherein a number of times that the second rinsing step is performed is equal to or greater than a number of times that the first rinsing step is performed.

3. The method of claim 1 , wherein a number of times that the second rinsing step is performed is 7 or more.

4. The method of claim 1 , further comprising at least one of an electrode and a gas nozzle installed in the reaction tube.

5. A method of manufacturing a semiconductor device, comprising:
a cleaning step of cleaning a reaction tube, the cleaning step including:
a first annealing step of annealing the reaction tube;
a first cleaning step of cleaning an inner surface of the reaction tube, after the first annealing step, with a liquid including a fluorine compound having a first concentration;
a first rinsing step of washing away the fluorine compound used in the first cleaning step with pure water, wherein performing the first rinsing step one or more times is set to be a first cycle, and the first cycle is performed one or more times;
a second annealing step of annealing the reaction tube;
a second cleaning step of cleaning the inner surface of the reaction tube, after the second annealing step, with a liquid including a fluorine compound having a second concentration higher than the first concentration; and
a second rinsing step of washing away the fluorine compound used in the second cleaning step with pure water, the second rinsing step being performed two or more times;

a substrate-processing step of accommodating one or more substrates in a process chamber installed inside the reaction tube; and processing the substrates,
wherein each of the first rinsing step and the second rinsing step includes:
a wetting step of wetting the reaction tube by contacting with the pure water;
a rocking step of rocking the reaction tube in contact with the pure water; and
a rotating step of rotating the reaction tube in contact with the pure water in a circumferential direction of the reaction tube.

6. The method of claim 5 , wherein the substrate-processing step includes:
holding a plurality of substrates in a substrate holder; and
accommodating the substrate holder, which holds the plurality of substrates, in the reaction tube.

7. The method of claim 5 , wherein the substrate-processing step includes:
processing the substrates with a first processing gas and a second processing gas supplied into the reaction tube.

8. The method of claim 5 , wherein the substrate-processing step is performed by heating the one or more substrates accommodated in the reaction tube.

9. The method of claim 7 , wherein the first processing gas is a precursor gas forming a first layer, and the second processing gas is a reaction gas forming a second layer by modifying the first layer.

Assignees

• Kokusai Electric Corp
• Shin Etsu Quartz Prod Co Ltd

Inventors

• Morita Shinya
• Nakada Toru
• Kimura Hiroyuki
• Segawa Toru

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H01L21/0217

  Electricity · mapped topic