Deposition apparatus

Patent metadata

Field	Value
Publication number	US-11680316-B2
Application number	US-202017117111-A
Country	US
Kind code	B2
Filing date	Dec 10, 2020
Priority date	Oct 21, 2020
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

First claim

What is claimed is:

1. A deposition apparatus, comprising:
a chamber, comprising a deposition area, and a non-deposited area located at a periphery of the deposition area;
a gas intake device, communicated with the chamber, wherein the gas intake device is disposed corresponding to the deposition area of the chamber and is configured to draw a process gas into the deposition area of the chamber;
a gas annulus, disposed in the chamber, wherein the gas annulus surrounds the gas intake device and is configured to form an annular gas curtain in the deposition area;
a carrier, disposed in the deposition area of the chamber, wherein the gas annulus is located between the gas intake device and the carrier, the carrier is configured to carry a deposited object, and the deposited object is surrounded by the annular gas curtain; and
a retaining annulus, disposed in the chamber and surrounds the carrier, wherein the retaining annulus is located between the gas annulus and the carrier and disposed along a boundary between the deposition area and the non-deposited area, wherein the retaining annulus comprises an inner wall surface facing the deposition area, an outer wall surface facing the non-deposited area, and a plurality of through holes, wherein the through holes penetrate through the inner wall surface and the outer wall surface.

2. The deposition apparatus according to claim 1 , wherein a position of an orthographic projection of the gas annulus on the carrier is located inside the retaining annulus.

3. The deposition apparatus according to claim 1 , wherein a position around the carrier in which the annular gas curtain falls is located inside the retaining annulus.

4. The deposition apparatus according to claim 1 , further comprising:
a heater, disposed below the deposition area of the chamber, wherein the carrier is disposed above the heater.

5. The deposition apparatus according to claim 1 , further comprising:
a gas extraction device, communicated with the chamber, wherein the gas extraction device is disposed corresponding to the non-deposited area of the chamber.

6. The deposition apparatus according to claim 1 , wherein the gas annulus comprises a top surface, a bottom surface, a plurality of gas inlets located at the top surface, and a plurality of gas outlets located at the bottom surface, wherein the gas outlets are communicated with the gas inlets.

7. The deposition apparatus according to claim 6 , wherein parts of the gas outlets are arranged at an inner ring, and other parts of the gas outlets are arranged at an outer ring, wherein on a radial direction, any of the gas outlets arranged at the inner ring is aligned with one of the gas outlets arranged at the outer ring.

8. The deposition apparatus according to claim 6 , wherein parts of the gas outlets are arranged at an inner ring, and other parts of the gas outlets are arranged at an outer ring, wherein on a radial direction, any of the gas outlets arranged at the inner ring is located between any two adjacent ones of the gas outlets arranged at the outer ring.

9. The deposition apparatus according to claim 6 , wherein parts of the gas outlets are arranged at an inner ring, and other parts of the gas outlets are arranged at an outer ring, wherein an aperture of any of the gas outlets arranged at the inner ring is larger than an aperture of any of the gas outlets arranged at the outer ring.

10. The deposition apparatus according to claim 6 , wherein the gas inlets are arranged equidistantly at the top surface.

11. The deposition apparatus according to claim 6 , wherein the gas annulus further comprises an inner surface connecting the top surface and the bottom surface, and the inner surface is a rough surface.

12. The deposition apparatus according to claim 1 , wherein the inner wall surface of the retaining annulus is a rough surface.

13. The deposition apparatus according to claim 1 , wherein an aperture of any of the through hole is D, and a height of the retaining annulus is H, and 0.15≤D/H≤0.2.

14. The deposition apparatus according to claim 1 , wherein an angle between the inner wall surface and the carrier is between 60 and 90 degrees.

15. The deposition apparatus according to claim 1 , wherein a center height of any of the through hole is HC, and a height of the retaining annulus is H, and ⅓≤HC/H≤½.

16. The deposition apparatus according to claim 1 , wherein the retaining annulus protrudes from an edge of the carrier.

Assignees

• Ind Tech Res Inst

Inventors

• Chen Kuan-Chou
• Wang Ching-Chiun
• Huang Chih-Yung
• Liang Muh-Wang
• Lin Yi-Jiun

Classifications

• C23C16/45519 Primary

  Inert gas curtains · CPC title

• C23C16/45591

  Fixed means, e.g. wings, baffles · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/4558

  Perforated rings · CPC title

• C23C16/4401 Primary

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title