Compound, photoresist composition comprising same, photoresist pattern comprising same, and method for manufacturing photoresist pattern

US11680040B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11680040-B2
Application numberUS-201916978557-A
CountryUS
Kind codeB2
Filing dateOct 11, 2019
Priority dateOct 11, 2018
Publication dateJun 20, 2023
Grant dateJun 20, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

First claim

Opening claim text (preview).

The invention claimed is: 1. A compound represented by Chemical Formula 1: wherein, in the Chemical Formula 1, p is an integer of 2 to 4; X is S, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group or a substituted or unsubstituted alkyl group, provided that when p is an integer of 3 or 4, X is not S; L 1 is the same as or different from each other and each independently is a direct bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, or a substituted or unsubstituted heteroarylene group; Rb is the same as or different from each other and each independently is a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group; Q + is the same as or different from each other and each independently is an onium cation; Y − is the same as or different from each other and each independently is an acid anion; and m and n are each an integer of 1 to 10. 2. The compound of claim 1 , wherein the compound is represented by any one of Chemical Formulae 2 to 4: in the Chemical Formulae 2 to 4, L 1 , Rb, Y − , Q + , m and n are as defined in claim 1 ; X 1 is S or CR 1 R 2 ; X 2 is a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group; X 3 is C or a substituted or unsubstituted alkyl group; and R 1 and R 2 are the same as or different from each other, and each independently hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphine group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or adjacent groups bond to each other to form a substituted or unsubstituted aromatic hydrocarbon ring or a substituted or unsubstituted aliphatic hydrocarbon ring. 3. The compound of claim 2 , wherein X 1 of the Chemical Formula 2 is S or represented by any one of Chemical Formulae 1-1 to 1-3: in the Chemical Formulae 1-1 to 1-3, * is a site linked to L 1 ; R 11 to R 22 are the same as or different from each other, and each independently hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphine group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or adjacent groups bond to each other to form a substituted or unsubstituted aromatic hydrocarbon ring or a substituted or unsubstituted aliphatic hydrocarbon ring; a is an integer of 0 to 2; and b and c are an integer of 0 to 3. 4. The compound of claim 2 , wherein X 2 of the Chemical Formula 3 is a substituted or unsubstituted phenyl group, or CR 31 , and wherein R 31 is hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group. 5. The compound of claim 2 , wherein X 3 of the Chemical Formula 4 is C; or a substituted or unsubstituted C 1 to C 10 alkyl group. 6. The compound of claim 1 , wherein Rb is any one of the following structural formulae: in the structural formulae, means a site linked to the Chemical Formula 1. 7. The compound of claim 1 , wherein Q + is an onium cation comprising an S, I, O, N, P, Cl, Br, F, As, Se, Sn, Sb, Te, or Bi element. 8. The compound of claim 1 , wherein Q + is represented by Chemical Formula 2-1: in the Chemical Formula 2-1, R 41 to R 43 are the same as or different from each other, and each independently hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroaryl group. 9. A photoresist composition comprising: the compound of claim 1 ; a binder resin; and a solvent. 10. The photoresist composition of claim 9 comprising the compound in 1 parts by weight to 10 parts by weight based on 100 parts by weight of the photoresist composition. 11. A photoresist pattern comprising the photoresist composition of claim 9 . 12. A method for preparing a photoresist pattern, the method comprising: forming a photoresist layer by coating the photoresist composition of claim 9 on a semiconductor substrate; selectively exposing the photoresist layer; and developing the exposed photoresist layer. 13. The method for preparing a photoresist pattern of claim 12 , wherein the selectively exposing of the photoresist layer is aligning a mask on the photoresist, and exposing an area of the photoresist layer not covered by the mask to ultraviolet rays. 14. The method for preparing a photoresist pattern of claim 12 , wherein the developing of the exposed photoresist layer is removing the exposed portion in the photoresist layer by immersing in a developing solution.

Assignees

Inventors

Classifications

  • with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • Sulfonium compounds · CPC title

  • Adamantanes · CPC title

  • C07C309/12Primary

    containing esterified hydroxy groups bound to the carbon skeleton · CPC title

  • with binders · CPC title

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Frequently asked questions

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What does patent US11680040B2 cover?
The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification C07C309/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 20 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).