Ferroelectric and multiferroic material structures

Patent metadata

Field	Value
Publication number	US-11678587-B2
Application number	US-202017076131-A
Country	US
Kind code	B2
Filing date	Oct 21, 2020
Priority date	Oct 21, 2019
Publication date	Jun 13, 2023
Grant date	Jun 13, 2023

Abstract

A ferroelectric device includes a substrate, a first electrode on the substrate, and a hexagonal ferroelectric material on the first electrode. The first electrode comprises a single crystal epitaxial material. By using a single crystal epitaxial material for an electrode to a hexagonal ferroelectric material, a high-quality material interface may be provided between these layers, thereby improving the performance of the ferroelectric device by allowing for a reduced coercive field.

First claim

What is claimed is:

1. A ferroelectric device comprising:
a substrate that comprises yttria-stabilized zirconia (YSZ) crystal;
a first electrode directly on the substrate, the first electrode comprising a single crystal epitaxial material;
a hexagonal ferroelectric material layer directly on the first electrode; and
a second electrode directly on the hexagonal ferroelectric material layer such that the hexagonal ferroelectric material is between the first electrode and the second electrode, wherein the second electrode is a single crystal epitaxial material.

2. The ferroelectric device of claim 1 wherein the hexagonal ferroelectric material layer comprises hexagonal LuFeO 3 .

3. The ferroelectric device of claim 2 wherein the first electrode comprises iridium.

4. The ferroelectric device of claim 3 wherein the first electrode comprises (111) oriented iridium.

5. The ferroelectric device of claim 1 wherein the second electrode comprises iridium.

6. The ferroelectric device of claim 1 wherein the hexagonal ferroelectric material layer comprises one or more of h-LuMnO 3 , h-YbMnO 3 , h-ErMnO 3 , h-HoMnO 3 , h-YMnO 3 , h-YbFeO 3 , h-TmFeO 3 , h-ErFeO 3 , h-HoFeO 3 , h-DyFeO 3 , h-TbFeO 3 , h-GdFeO 3 , and h-EuFeO 3 .

7. The ferroelectric device of claim 6 wherein the first electrode comprises iridium.

8. A method for manufacturing a ferroelectric device according to claim 1 , the method comprising:
planarizing a surface of the substrate;
depositing the first electrode on the surface of the substrate, wherein the first electrode is a single crystal epitaxial material;
depositing the hexagonal ferroelectric material layer directly on the first electrode; and
depositing the second electrode on the hexagonal ferroelectric material layer.

9. The method of claim 8 wherein the hexagonal ferroelectric material layer comprises hexagonal LuFeO 3 .

10. The method of claim 9 wherein the first electrode comprises iridium.

11. The method of claim 10 wherein depositing the first electrode and depositing the hexagonal ferroelectric material layer are performed via molecular beam epitaxy (MBE).

12. The method of claim 11 wherein depositing the first electrode on the surface of the substrate comprises providing an iridium flux at the substrate between 1×10 13 atoms/cm 2 /s and 6×10 13 atoms/cm 2 /s.

13. The method of claim 12 wherein depositing the hexagonal ferroelectric material layer comprises providing sequentially shuttering lutetium and iron molecular beams with a flux between 1×10 13 and 2.5×10 13 atoms/cm 2 /s such that doses of the lutetium and iron are provided in the same monolayer-by-monolayer sequence in which they occur along the [001] direction of h-LuFeO 3 .

14. The method of claim 13 wherein depositing the hexagonal ferroelectric material layer comprises providing an initial monolayer of FeO on the first electrode before sequentially shuttering the lutetium and iron molecular beams.

15. The method of claim 14 wherein planarizing the substrate comprises annealing the substrate in air at a temperature of at least 1000° C. for at least 2 hours.

16. The method of claim 13 wherein depositing the first electrode and depositing the hexagonal ferroelectric material layer are performed in a constant vacuum.

17. The method of claim 16 wherein during deposition of the first electrode and the hexagonal ferroelectric material layer a mixture of oxygen and approximately 10% ozone is supplied continuously at a background pressure of 1×10 −6 Torr.

Assignees

• Univ Cornell

Inventors

• Schlom Darrell
• Steinhardt Rachel
• Holtz Megan

Classifications

• G11C11/221

  using ferroelectric capacitors · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title