Resist underlayer composition, and method of forming patterns using the composition

Patent metadata

Field	Value
Publication number	US-11675271-B2
Application number	US-202117153095-A
Country	US
Kind code	B2
Filing date	Jan 20, 2021
Priority date	Jan 31, 2020
Publication date	Jun 13, 2023
Grant date	Jun 13, 2023

Abstract

A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.

First claim

What is claimed is:

1. A resist underlayer composition comprising:
a polymer comprising one or more structural units represented by Chemical Formula 3 and/or Formula 6:

and
a solvent,
wherein, in Chemical Formulae 3 and 6, * is a linking point.

2. The resist underlayer composition of claim 1 , wherein the polymer has a weight average molecular weight (Mw) of about 1,000 g/mol to about 100,000 g/mol.

3. The resist underlayer composition of claim 1 , wherein the polymer is comprised in an amount of about 0.1 wt % to about 50 wt % based on a total amount of the resist underlayer composition.

4. The resist underlayer composition of claim 1 , wherein the resist underlayer composition further comprises at least one polymer selected from an acrylic resin, an epoxy resin, a novolac resin, a glycoluril resin, and a melamine resin.

5. The resist underlayer composition of claim 1 , further comprising an additive comprising a surfactant, a thermal acid generator, a plasticizer, or a combination thereof.

6. A method of forming patterns, the method comprising:
forming an etching target layer on the substrate,
coating the resist underlayer composition of claim 1 on the etching target layer to form a resist underlayer,
forming a photoresist pattern on the resist underlayer, and
sequentially etching the resist underlayer and the etching target layer utilizing the photoresist pattern as an etching mask.

7. The method of claim 6 , wherein the forming of the photoresist pattern comprises:
forming a photoresist layer on the resist underlayer;
exposing the photoresist layer; and
developing the photoresist layer.

8. The method of claim 6 , wherein the forming of the resist underlayer further comprises heat treating at about 100° C. to about 500° C. after coating the resist underlayer composition.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Baek Jaeyeol
• Kwon Soonhyung
• Kim Minsoo
• Park Hyeon
• Bae Shinhyo
• Song Daeseok
• Choi Yoojeong

Classifications

• C07D251/32

  Cyanuric acid; Isocyanuric acid · CPC title

• G03F7/091 Primary

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title