Cmos-mems integrated device including a contact layer and methods of manufacture
US-2016362296-A1 · Dec 15, 2016 · US
US11675186B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11675186-B2 |
| Application number | US-201916591854-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 3, 2019 |
| Priority date | Aug 24, 2016 |
| Publication date | Jun 13, 2023 |
| Grant date | Jun 13, 2023 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method for making a micro-electro mechanical (MEMS) device includes forming a MEMS mirror stack on a handle layer, and applying a first bonding layer to the MEMS mirror stack. The method continues with disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants, removing the handle layer, and applying a second bonding layer to the MEMS mirror stack. A cap layer is disposed on the second bonding layer such that the cap layer is mechanically anchored to the MEMS mirror stack and so as to seal against ingress of environmental contaminants.
Opening claim text (preview).
The invention claimed is: 1. A method of making a micro-electro mechanical (MEMS) device, comprising: forming a MEMS mirror stack on a handle layer, comprising: disposing a silicon layer on the handle layer; disposing a first insulating layer on the silicon layer; etching portions of the first insulating layer; depositing a first conductive layer on the first insulating layer and into the etched portions thereof; and depositing a second insulating layer on the first conductive layer; applying a first bonding layer to the MEMS mirror stack; disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants; removing the handle layer; applying a second bonding layer to the MEMS mirror stack; and disposing a cap layer on the second bonding layer such that the cap layer is mechanically anchored to the MEMS mirror stack and so as to seal against ingress of environmental contaminants. 2. The method of claim 1 , wherein forming the MEMS mirror stack on the handle layer further comprises removing at least one portion of the second insulating layer, the first conductive layer, and the first insulating layer so as to form a lower chamber. 3. The method of claim 2 , wherein applying the first bonding layer to the MEMS mirror stack comprises applying the first bonding layer to the second insulating layer. 4. The method of claim 3 , further comprising processing the silicon layer so as to form a stator, and associating a rotor with the stator and configuring the rotor to rotate with respect to the stator. 5. The method of claim 2 , further comprising removing at least one portion of the second insulating layer so as to expose at least one portion of the first conductive layer, and forming a conductive pad on the at least one exposed portion of the first conductive layer. 6. The method of claim 5 , wherein the MEMS mirror stack is formed to have a width greater than a width of the substrate in at least one direction; and wherein the conductive pad extends away from the MEMS mirror stack opposite the cap layer and is exposed by the MEMS mirror stack having the width greater than the width of the substrate in the at least one direction. 7. The method of claim 1 , further comprising depositing a second conductive layer on the silicon layer. 8. The method of claim 1 , wherein the cap layer is disposed on the second bonding layer in an environment having pressure substantially at a vacuum. 9. A method of making a micro-electro mechanical (MEMS) device, comprising: forming a MEMS mirror stack on a handle layer by: disposing a silicon layer on the handle layer; disposing a first insulating layer on the silicon layer; etching portions of the first insulating layer; depositing a first conductive layer on the first insulating layer and into the etched portions thereof; and depositing a second insulating layer on the first conductive layer; applying a first bonding layer to the MEMS mirror stack; and disposing a substrate on the first bonding layer such that the MEMS mirror stack is mechanically anchored to the substrate and so as to seal against ingress of environmental contaminants. 10. The method of claim 9 , wherein forming the MEMS mirror stack on the handle layer further comprises removing at least one portion of the second insulating layer, first conductive layer, and first insulating layer so as to form a lower chamber. 11. The method of claim 10 , wherein applying the first bonding layer to the MEMS mirror stack comprises applying the first bonding layer to the second insulating layer.
the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD (G02B26/0825 takes precedence; micromechanical devices in general B81B) · CPC title
characterised by the material or arrangement of seals between parts · CPC title
Packaging optical devices · CPC title
with one or more pivoting mirrors or galvano-mirrors (G02B26/101 takes precedence) · CPC title
Bonding an individual cap on the substrate · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.