Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers

Patent metadata

Field	Value
Publication number	US-11674237-B2
Application number	US-201916411651-A
Country	US
Kind code	B2
Filing date	May 14, 2019
Priority date	May 14, 2019
Publication date	Jun 13, 2023
Grant date	Jun 13, 2023

Abstract

Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

First claim

What is claimed is:

1. A method for fabricating a crystalline metal-phosphide hetero-layer, the method comprising;
providing a crystalline base substrate;
forming a crystalline buffer layer on the crystalline base substrate;
forming a first crystalline metal-source layer comprising a first metal source on the crystalline buffer layer, wherein the first crystalline metal-source is a metal oxide of W, Mo or Nb, or a metal nitride of W, Mo or Nb;
forming a second crystalline metal-source layer comprising a second metal-source on the first crystalline metal-source layer, wherein the second crystalline metal-source is a metal oxide of W, Mo or Nb, or a metal nitride of W, Mo or Nb and is compositionally different from the first metal-source;
performing a chemical conversion reaction to convert the first crystalline metal-source layer into a first crystalline metal phosphide layer; and
performing a chemical conversion reaction to convert the second crystalline metal-source layer into a second crystalline metal phosphide layer.

2. The method of claim 1 , wherein the base substrate comprises silicon.

3. The method of claim 2 , wherein the base substrate has a (100) crystal orientation.

4. The method of claim 1 , wherein the crystalline buffer layer is a layer comprising SrTiO 3 .

5. Thee method of claim 1 , wherein the crystalline buffer layer is a layer comprising sapphire.

6. The method of claim 1 , wherein the first crystalline metal-source layer is a layer comprising WO 3 , the second crystalline metal-source layer is a layer comprising MoO 3 , the first crystalline metal phosphide layer is a layer comprising WP 2 , and the second crystalline metal phosphide layer is a layer comprising MoP 2 .

7. The method of claim 1 , wherein the first crystalline metal-source layer is a layer comprising MoO 3 , the second crystalline metal-source layer is a layer comprising WO 3 , the first crystalline metal phosphide layer is a layer comprising MoP 2 , and the second crystalline metal phosphide layer is a layer comprising WP 2 .

8. The method of claim 1 , wherein the chemical conversion reaction is performed by an annealing in a phosphorous environment.

9. The method of claim 8 , wherein the annealing is performed at a temperature range of 600° C. to 1000° C.

10. The method of claim 1 , wherein the chemical conversion reaction is a solid-phase phosphidation.

11. The method of claim 1 , wherein the chemical conversion reaction is performed in a chemical vapor deposition (CVD) reactor with a precursor selected from the group consisting of: tertiarybutylphosphine (TBP) and phospine (PH 3 ).

Assignees

• IBM

Inventors

• Baumgartner Yannick
• Gotsmann Bernd W
• Fompeyrine Jean
• Czornomaz Lukas

Classifications

• H10P14/3418

  Phosphides · CPC title

• C30B1/10

  by solid state reactions or multi-phase diffusion · CPC title

• C30B1/026

  Solid phase epitaxial growth through a disordered intermediate layer · CPC title

• C30B1/02 Primary

  by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence) · CPC title

• C23C28/04 Primary

  only coatings of inorganic non-metallic material · CPC title