Micro LED device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11670667-B2
Application number	US-202016922147-A
Country	US
Kind code	B2
Filing date	Jul 7, 2020
Priority date	Oct 22, 2019
Publication date	Jun 6, 2023
Grant date	Jun 6, 2023

Abstract

A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

First claim

What is claimed is:

1. A micro light emitting diode (LED) device, comprising:
a support substrate;
a light emitting layer provided on the support substrate, the light emitting layer comprising:
a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer;
a first electrode and a second electrode provided on a first side and a second side of the stacked structure, respectively; and
a plurality of light emitting regions;

a bonding layer between the support substrate and the light emitting layer; and
a drive layer provided on the light emitting layer and comprising a drive element, the drive element being electrically connected to the light emitting layer and configured to apply power to the plurality of light emitting regions of the light emitting layer,
wherein the support substrate is a separate substrate from a growth substrate on which the stacked structure of the light emitting layer is formed through a semiconductor deposition process, and the bonding layer is formed between the support substrate and the light emitting layer by bonding the support substrate to the growth substrate.

2. The micro LED device of claim 1 , wherein the light emitting layer further comprises an isolation structure that separates the plurality of light emitting regions from each other.

3. The micro LED device of claim 2 , wherein the drive element of the drive layer comprises a thin film transistor configured to apply the power to the plurality of light emitting regions.

4. The micro LED device of claim 3 , wherein the drive element comprises an n-MOS low-temperature polycrystalline silicon (LPTS) thin film transistor.

5. The micro LED device of claim 2 , further comprising: a current blocking layer in a region corresponding to the isolation structure on the light emitting layer.

6. The micro LED device of claim 1 , further comprising: a color conversion layer including a plurality of color conversion regions for converting a light emitted from the light emitting layer into light colors.

7. The micro LED device of claim 6 , wherein the color conversion layer further comprises a partition wall provided between the plurality of color conversion regions.

8. The micro LED device of claim 6 ,
wherein the first electrode is provided between the bonding layer and the first semiconductor layer,
wherein the second electrode is a pixel electrode and provided between the second semiconductor layer and the drive layer,
wherein each of the plurality of light emitting regions corresponds to a pixel, and
wherein a unit pixel includes two or more light emitting regions.

9. The micro LED device of claim 8 ,
wherein the unit pixel comprises a first light emitting region, a second light emitting region, and a third light emitting region of the light emitting layer, and
wherein the plurality of color conversion regions comprise:
a first color conversion region for converting a light generated in the first light emitting region into a first color light;
a second color conversion region for converting a light generated in the second light emitting region into a second color light; and
a third color conversion region for converting a light generated in the third light emitting region into a third color light.

10. The micro LED device of claim 8 ,
wherein the unit pixel comprises a first light emitting region, a second light emitting region, and a third light emitting region of the light emitting layer, and
wherein the plurality of color conversion regions comprise:
a first color conversion region for converting a light generated in the first light emitting region into a first color light;
a second color conversion region for converting a light generated in the second light emitting region into a second color light; and
a transparent region via which a light generated in the third light emitting region passes without color conversion.

11. A method of manufacturing a micro light emitting diode (LED) device, the method comprising:
forming a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer of a light emitting layer on a growth substrate in an order of the second semiconductor layer, the active layer, and the first semiconductor layer;
forming an isolation structure in the stacked structure to form a plurality of light emitting regions in the light emitting layer;
forming a first electrode on the stacked structure;
bonding a support substrate to the growth substrate, the support substrate facing the first electrode;
removing the growth substrate and performing etching to remove a part of a thickness of the second semiconductor layer and expose an end portion of the isolation structure;
forming a second electrode electrically connected to the stacked structure and configured to generate a light in the plurality of light emitting regions; and
forming a drive layer including a drive element, the drive element being electrically connected to the second electrode on the light emitting layer and configured to apply power to the plurality of light emitting regions.

12. The method of manufacturing the micro LED device of claim 11 , further comprising, prior to forming the second electrode, forming a current blocking layer on a region corresponding to the isolation structure,
wherein the second electrode is electrically connected to an upper surface of the stacked structure on which the current blocking layer is formed, corresponding to each light emitting region.

13. The method of manufacturing the micro LED device of claim 11 , wherein the isolation structure is formed to a partial thickness of the second semiconductor layer, and
wherein the etching is performed until at least the end portion of the isolation structure is exposed by removing the partial thickness of the second semiconductor layer.

14. The method of manufacturing the micro LED device of claim 13 , wherein the isolation structure is formed by injecting ions.

15. The method of manufacturing the micro LED device of claim 11 , further comprising: forming a color conversion layer on the drive layer, the color conversion layer including a plurality of color conversion regions for converting a light emitted from the light emitting layer into light colors.

16. The method of manufacturing the micro LED device of claim 15 , wherein the color conversion layer is formed to further include a partition wall between the plurality of color conversion regions.

17. The method of manufacturing the micro LED device of claim 15 , wherein the first electrode is a common electrode, and the second electrode is a pixel electrode,
wherein each of the plurality of light emitting regions corresponds to a pixel, and
wherein a unit pixel includes two or more light emitting regions.

18. The method of manufacturing the micro LED device of claim 17 , wherein the unit pixel comprises a first light emitting region, a second light emitting region, and a third light emitting region of the light emitting layer, and
wherein the plurality of color conversion regions comprise:
a first color conversion region for converting a light generated in the first light emitting region into a first color light;
a second color conversion region for converting a light generated in the second light emitting region into a second color light; and
a third color conversion region for converting a light generated in the third light emitting region into a third color light.

19. The method of manufacturing the micro LED device

Assignees

• Samsung Electronics Co Ltd

Inventors

• Han Joohun
• Choi Junhee
• Kong Kiho
• Park Jinjoo
• Kim Nakhyun
• Park Junghun

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/8513

  having two or more wavelength conversion materials · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/83

  Electrodes · CPC title