Narrow sized laser diode

Patent metadata

Field	Value
Publication number	US-11664643-B1
Application number	US-202117546799-A
Country	US
Kind code	B1
Filing date	Dec 9, 2021
Priority date	Jun 29, 2012
Publication date	May 30, 2023
Grant date	May 30, 2023

Abstract

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

First claim

What is claimed is:

1. A system comprising:
a gallium and nitrogen containing optical device operable as a laser diode; and
a package configured to enclose the optical device;
wherein the optical device is configured for use in an application, the optical device comprising:
a gallium and nitrogen containing member having a semipolar surface orientation selected from the (20-21) or (20-2-1) or (30-31) or (30-3-1) or (11-22) plane orientations, or an offcut of any of the foregoing orientations;
a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region;
a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip and having a pair of etched facets configured on the ends thereof, the ridge waveguide having a width that is less than the width of the chip;
at least one wirebond disposed on the n-side contact of the chip for coupling a wire to the chip, wherein the width of the chip is no more than a width of the at least one wirebond; and
a submount coupled to the chip such that the p-type region of the chip is facing the submount.

2. The system of claim 1 , wherein the application is selected from an optical application, a laser application, a display application, a metrology application, a communications application, a health care application, a surgery application, and an information technology application.

3. The system of claim 1 , wherein the width of the chip is either less than 110 microns or less than 70 microns.

4. The system of claim 1 , wherein the laser diode is operable at a wavelength from 430 nm to 480 nm or from 480 nm to 535 nm or from 390 nm to 430 nm.

5. The system of claim 1 , wherein the gallium and nitrogen containing member has a (20-21) surface orientation or an offcut thereof.

6. The system of claim 1 , wherein the gallium and nitrogen containing member has a (30-31) surface orientation or an offcut thereof.

7. A system comprising:
a lighting apparatus; and
an optical device configured to provide light for the lighting apparatus, the optical device operable as a laser diode;
wherein the optical device is configured for use in an application, the optical device comprising:
a gallium and nitrogen containing member;
a chip formed from the gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region;
a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip and having a pair of etched facets configured on the ends thereof, the ridge waveguide having a width that is less than the width of the chip;
at least one wirebond disposed on the n-side contact of the chip for coupling a wire to the chip, wherein the width of the chip is no more than a width of the at least one wirebond plus a minimum wirebonding placement tolerance; and
a submount coupled to the chip such that the p-type region of the chip is facing the submount.

8. The system of claim 7 , wherein the application is selected from an optical application, a laser application, a display application, a metrology application, a communications application, a health care application, a surgery application, and an information technology application.

9. The system of claim 7 , wherein the width of the chip is less than 110 microns.

10. The system of claim 7 , wherein the width of the chip is less than 70 microns.

11. The system of claim 7 , wherein the optical device is operable at a wavelength from 430 nm to 480 nm.

12. The system of claim 7 , wherein the optical device is operable at a wavelength from 480 nm to 535 nm.

13. The system of claim 7 , wherein the optical device is operable at a wavelength from 390 nm to 430 nm.

14. The system of claim 7 , wherein the gallium and nitrogen containing member of the optical device has a semipolar surface orientation selected from the (20-21) or (20-2-1) or (30-31) or (30-3-1) or (11-22) plane orientations, or an offcut of any of the foregoing orientations.

15. The system of claim 7 , wherein the gallium and nitrogen containing member of the optical device has a nonpolar surface orientation, or an offcut thereof.

16. A system comprising:
a gallium and nitrogen containing optical device operable as a laser diode;
wherein the optical device is configured for use in an application, the optical device comprising:
a chip comprising a gallium and nitrogen containing member, the chip having a width and a length, the width of the chip being a distance between sides of the chip and the length of the chip being a distance between ends of the chip, the chip also having a p-type region and an n-side contact opposite the p-type region;
a ridge waveguide configured to emit laser light, the ridge waveguide oriented substantially parallel to the length of the chip and having a pair of etched facets configured on the ends thereof, the ridge waveguide having a width that is less than the width of the chip;
at least one wirebond on the n-side contact of the chip for coupling a wire to the chip, wherein the width of the chip is no more than a width of the at least one wirebond; and
a submount coupled to the chip such that the p-type region of the chip is facing the submount.

17. The system of claim 16 , wherein the width of the chip is either less than 110 microns or less than 70 microns.

18. The system of claim 16 , wherein the laser diode is operable at a wavelength from 430 nm to 480 nm or from 480 nm to 535 nm or from 390 nm to 430 nm.

19. The system of claim 16 , wherein the gallium and nitrogen containing member has a semipolar surface orientation selected from the (20-21) or (20-2-1) or (30-31) or (30-3-1) or (11-22) plane orientations, or an offcut of any of the foregoing orientations.

20. The system of claim 16 , wherein the application is selected from an optical application, a laser application, a display application, a metrology application, a communications application, a health care application, a surgery application, and an information technology application.

Assignees

• Kyocera Sld Laser Inc

Inventors

• Raring James W
• Huang Hua

Classifications

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H01S5/0202 Primary

  Cleaving · CPC title

• H01S5/0014

  Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R) · CPC title

• H01S5/0234

  Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings · CPC title