Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device

Patent metadata

Field	Value
Publication number	US-11664414-B2
Application number	US-202117148787-A
Country	US
Kind code	B2
Filing date	Jan 14, 2021
Priority date	Feb 14, 2019
Publication date	May 30, 2023
Grant date	May 30, 2023

Abstract

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

First claim

What is claimed is:

1. A single crystal material, the single crystal material being a multinary single crystal material comprising at least three elements, wherein the single crystal material is a sintered product of a plurality of nanosheets,
a crystal structure of the sintered product of the plurality of nanosheets is different from a crystal structure of the plurality of nanosheets, and
a plane direction of the sintered product of the plurality of nanosheets is one of ( 100 ), ( 111 ), ( 110 ), or ( 010 ).

2. The single crystal material of claim 1 , wherein the single crystal material comprises each of the elements contained in the plurality of nanosheets.

3. The single crystal material of claim 1 , wherein the single crystal material is an oxide, a nitride, a sulfide, a phosphide, an arsenide, or a carbide of a multinary material.

4. The single crystal material of claim 1 , wherein the single crystal material is a ternary to quinary material.

5. The single crystal material of claim 1 , wherein the plurality of nanosheets comprise an exfoliated nanostructure of a layered material, a chalcogenide, a carbon structure, or a heterostructure.

6. The single crystal material of claim 5 , wherein the exfoliated nanostructure of the layered material is an exfoliated nanostructure of a layered perovskite.

7. The single crystal material of claim 6 , wherein the exfoliated structure of the layered material is represented by one of Chemical Formulas 1 to 3
A (n−1) M n O (3n+1)   Chemical Formula 1

A p M (p−1) O 3p   Chemical Formula 2

M p O (sp+1)   Chemical Formula 3

wherein, in Chemical Formulas 1 to 3,
each A is independently selected from Na, K, Rb, Mg, Ca, Sr, Ba, Bi, Hf, Ag, Cd, Ti, Pb, and a lanthanide element,
M is different from A and each M is independently selected from Li, Sc, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Zn, Al, Ga, In, Ge, Sn, Sb, Bi, and Te,
n≥1, and p≥1.

8. The single crystal material of claim 6 , wherein the exfoliated structure of the layered material is selected from Ca 2 Nb 3 O 10 , Ca 2 NaNb 4 O 13 , Ca 2 Na 2 Nb 5 O 16 , Sr 2 Nb 3 O 10 , Sr 2−x Ba x Nb 3 O 10 wherein 0<x<2SrBi 4 Ti 4 O 15 , Sr 2−x Ba x Bi 4 Ti 4 O 15 , wherein 0<x<2, Ti 2 NbO 7 , and LaNb 2 O 7 .

9. The single crystal material of claim 1 , wherein the single crystal material is in a form of a film having a thickness of about 0.5 nanometers to about 100 nanometers.

10. A stacked structure, comprising:
a single crystal substrate, and
a single crystal material of claim 1 on the single crystal substrate.

11. The stacked structure of claim 10 , wherein X-ray diffraction peaks of the single crystal material are in a substantially identical region as X-ray diffraction peaks of the single crystal substrate.

12. The stacked structure of claim 10 , wherein the single crystal substrate and the single crystal material have an identical crystal structure, and the identical crystal structure is a cubic, trigonal, orthorhombic, hexagonal, or rhombohedral crystal structure.

13. The stacked structure of claim 10 , wherein the single crystal substrate comprises a metal, a semi-metal, a binary compound, an oxide, a nitride, a sulfide, a phosphide, an arsenide, a carbide, or a combination thereof.

14. The stacked structure of claim 10 , wherein the single crystal substrate comprises at least one of barium and strontium, and titanium.

15. A ceramic electronic component comprising the stacked structure of claim 10 .

16. The ceramic electronic component of claim 15 , wherein the ceramic electronic component is multi-layer ceramic capacitor.

17. A device comprising the ceramic electronic component of claim 15 .

18. A ceramic electronic component comprising the single crystal material of claim 1 .

19. The ceramic electronic component of claim 18 , wherein the ceramic electronic component is multi-layer ceramic capacitor.

20. A device comprising the ceramic electronic component of claim 18 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyungjun
• Jung Doh Won
• Kwak Chan
• Kim Ki Hong
• Yang Daejin
• Lee Chang Soo

Classifications

• B05D1/20

  substances to be applied floating on a fluid · CPC title

• H01G4/1254

  based on niobium or tungsteen, tantalum oxides or niobates, tantalates · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B1/02

  by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence) · CPC title

• H10D1/692

  Electrodes · CPC title