Image sensor and electronic device including the same

Patent metadata

Field	Value
Publication number	US-11664401-B2
Application number	US-202117173688-A
Country	US
Kind code	B2
Filing date	Feb 11, 2021
Priority date	Feb 11, 2020
Publication date	May 30, 2023
Grant date	May 30, 2023

Abstract

An image sensor includes: a light detector including a plurality of photosensitive cells configured to sense light; a color separation lens array provided above the light detector and including a plurality of pattern structures, the color separation lens array being configured to collect light having different wavelength spectra respectively on at least two photosensitive cells of the plurality of photosensitive cells; and a variable interlayer element configured to adjust an optical distance between the light detector and the color separation lens array.

First claim

What is claimed is:

1. An image sensor comprising:
a light detector comprising a plurality of photosensitive cells configured to sense light;
a color separation lens array provided above the light detector and comprising a plurality of pattern structures, the color separation lens array being configured to collect light having different wavelength spectra respectively on at least two photosensitive cells of the plurality of photosensitive cells;
a processor; and
a variable interlayer element configured to adjust an optical distance between the light detector and the color separation lens array according to a signal from the processor.

2. The image sensor of claim 1 , wherein the variable interlayer element is further configured to adjust a physical distance between the light detector and the color separation lens array.

3. The image sensor of claim 2 , wherein the variable interlayer element comprises a microelectromechanical system actuator configured to drive a position of the color separation lens array.

4. The image sensor of claim 2 , wherein the variable interlayer element comprises:
a variable shape structure comprising a variable shape material that is variable in shape according to an electrical signal applied thereto; and
a signal application unit configured to apply the electrical signal to the variable shape structure.

5. The image sensor of claim 4 , wherein the variable shape material comprises a shape memory alloy or an electro-active polymer.

6. The image sensor of claim 2 , wherein the variable interlayer element comprises:
a frame structure comprising a variable height region, provided with a stretchable membrane, and a reservoir region in which an optical fluid to be introduced into the variable height region is stored; and
a signal application unit configured to apply a signal to move the optical fluid between the reservoir region and the variable height region for stretching or shrinking the stretchable membrane.

7. The image sensor of claim 1 , wherein the variable interlayer element comprises:
a variable refractive index layer having a refractive index that is variable according to an electrical signal applied thereto; and
a signal application unit configured to apply the electrical signal to the variable refractive index layer.

8. The image sensor of claim 7 , wherein the variable refractive index layer comprises LiNbO 3 , LiTaO 3 , potassium tantalate niobite (KTN), lead zirconate titanate (PZT), VO 2 , VO 2 O 3 , EuO, MnO, CoO, CoO 2 , LiCoO 2 , Ca 2 RuO 4 , or liquid crystal.

9. The image sensor of claim 1 , wherein the processor is further configured to:
control the variable interlayer element to form a plurality of optical distances that are different from each other, and
obtain image data by processing signals sensed by the light detector respectively at the plurality of optical distances.

10. The image sensor of claim 9 , wherein the processor is configured to perform computations on the image data by using spectrum data set according to the optical distances for the color separation lens array.

11. The image sensor of any claim 1 , wherein the color separation lens array comprises a plurality of regions respectively facing the plurality of photosensitive cells of the light detector and comprising at least one pattern structure, and
the plurality of regions are configured to collect light having different wavelength spectra respectively on adjacent photosensitive cells of the plurality of photosensitive cells.

12. The image sensor of claim 11 , wherein the plurality of regions comprise a first region, a second region, a third region, and a fourth region which each comprise at least one of the plurality of pattern structures, and
the plurality of photosensitive cells comprise first photosensitive cell, second photosensitive cell, third photosensitive cell, and fourth photosensitive cell which face the first region, the second region, the third region, and the fourth region, respectively.

13. The image sensor of claim 12 , wherein the image sensor has a pixel arrangement structure in which a plurality of unit pixels are arranged in a Bayer pattern according to the optical distance and the plurality of unit pixels comprise red, green, and blue pixels.

14. The image sensor of claim 12 , wherein shapes, arrangements, and sizes of pattern structures respectively provided in the first region, the second region, the third region, and the fourth region are determined such that immediately after passing through the color separation lens array, light having a first wavelength has a phase difference of 2Nπ at positions corresponding to a center portion of the first photosensitive cell and a center portion of the fourth photosensitive cell and a phase difference of (2N−1)n at positions corresponding to center portion of the second photosensitive cell and a center portion of the third photosensitive cell, where N is an integer greater than 0.

15. The image sensor of claim 12 , wherein shapes, arrangements, and sizes of pattern structures respectively provided in the first region, the second region, the third region, and the fourth region are determined such that immediately after passing through the color separation lens array, light having a second wavelength has a phase difference of 2Mπ at a position corresponding to a center portion of the second photosensitive cell, a phase difference of (2M−1)π at positions corresponding to a center portion of the first photosensitive cell and a center portion of the fourth photosensitive cell, and a phase difference of greater than (2M−2)π and less than (2M−1)π at a position corresponding to a center portion of the third photosensitive cell, where M is an integer greater than 0.

16. The image sensor of claim 12 , wherein shapes, arrangements, and sizes of pattern structures respectively provided in the first region, the second region, the third region, and the fourth region are determined such that immediately after passing through the color separation lens array, light having a third wavelength has a phase difference of 2π at a position corresponding to a center portion of the third photosensitive cell, a phase difference of (2L−1)π at positions corresponding to a center portions of the first photosensitive cell and a center portion of the fourth photosensitive cell, and a phase difference of greater than (2L−2)π and less than (2L−1)π at a position corresponding to a center portion of the second photosensitive cell, where L is an integer greater than 0.

17. The image sensor of claim 12 , wherein the plurality of pattern structures comprise a plurality of nano-posts, and
nano-posts provided in the first region, nano-posts provided in the second region, nano-posts provided in the third region, and nano-posts provided in the fourth region are different from each other in at least one of shape, size, and arrangement.

18. The image sensor of claim 17 , wherein nano-posts, which are provided in regions corresponding to green pixel among the first region, the second region, the third region, and the fourth region, are arranged according to distribution rules that are different in a first direction and a second direction perpendicular to the first direction.

19. The image sensor of claim 18 , wherein nano-posts, which are provided in regions corresponding to blue and red pixels among the first region, the second region, the third region, and the fourth region, are arranged according to symmetrical distribution rules in the first direction and the second direction.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yun Seokho
• Roh Sookyoung
• Park Hongkyu
• Lim Minwoo

Classifications

• H10F39/182

  Colour image sensors · CPC title

• H10F39/8063 Primary

  Microlenses · CPC title

• H10F39/806 Primary

  Optical elements or arrangements associated with the image sensors · CPC title

• H10F39/8023

  Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title