Metal/metal chalcogenide electrode with high specific surface area

US11661662B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11661662-B2
Application numberUS-201716096740-A
CountryUS
Kind codeB2
Filing dateMar 31, 2017
Priority dateApr 27, 2016
Publication dateMay 30, 2023
Grant dateMay 30, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present invention relates to an electrode comprising an electrically conductive substrate of which at least one portion of the surface is covered with a metal deposit of copper, the surface of said deposit being in an oxidised, sulphurised, selenised and/or tellurised form and the deposit having a specific surface area of more than 1 m2/g; a method for preparing such an electrode; and a method for oxygenising water with dioxygen involving such an electrode.

First claim

Opening claim text (preview).

The invention claimed is: 1. An electrode comprising an electrically conductive substrate having a surface, wherein at least one part of the surface of the electrically conductive substrate is covered with a porous copper metal deposit, wherein the surface of the porous copper metal deposit is oxidized, wherein the porous copper metal deposit has a specific surface area greater than or equal to 1 m 2 /g and greater than or equal to 15 cm 2 /cm 2 geometric , and an average pore size of between 10 μm and 500 μm, wherein the oxidized surface of the porous copper metal deposit is obtained by oxidizing the surface of the porous copper metal deposit at a temperature comprised between 100° C. and 400° C., and wherein copper oxide is optionally deposited on the oxidized surface of the porous copper metal deposit. 2. The electrode according to claim 1 , wherein the metal deposit has a thickness comprised between 10 μm and 2 mm. 3. The electrode according to claim 1 , wherein the average pore size is between 30 μm and 70 μm. 4. The electrode according to claim 1 , wherein the electrically conductive substrate consists, at least in part, of an electrically conductive material selected from a metal; a metal oxide; a metal sulphide; carbon; a semiconductor; and a mixture thereof. 5. The electrode according to claim 4 , wherein the metal is copper, steel, aluminium, or zinc; the metal oxide is fluorine-doped tin oxide (FTO) or indium tin oxide (ITO); the metal sulphide is cadmium sulphide or zinc sulphide; the carbon is in the form of carbon felt, graphite, vitreous carbon, or boron-doped diamond; and the semiconductor is silicon. 6. The electrode according to claim 1 , wherein the metal deposit has a specific surface area comprised between 1 m 2 /g and 500 m 2 /g. 7. The electrode according to claim 6 , wherein the metal deposit has a specific surface area comprised between 3 m 2 /g and 50 m 2 /g. 8. The electrode according to claim 1 , wherein the metal deposit has a specific surface area of between 15/cm 2 , cm 2 geometric and 50 cm 2 /cm 2 geometric . 9. An electrochemical device comprising an electrode according to claim 1 . 10. The electrochemical device according to claim 9 , being an electrolysis device or a fuel cell. 11. An electrode obtainable by a process comprising the following successive steps: (i) electrodepositing copper on at least one part of the surface of an electrically conductive substrate so as to form a copper metal deposit on the at least one part of the surface of the electrically conductive substrate, the copper metal deposit having a surface, (ii) oxidizing the surface of the copper metal deposit at a temperature comprised between 100° C. and 400° C. to form an oxidized surface, and (iii) optionally depositing copper oxide on the oxidized surface of the copper metal deposit. 12. An electrochemical device comprising an electrode according to claim 11 . 13. A process for preparing an electrode according to claim 1 comprising the following successive steps: (i) electrodepositing copper on at least one part of the surface of the electrically conductive substrate so as to form a copper metal deposit the at least one part of the surface of the electrically conductive substrate, (ii) oxidizing the surface of the copper metal deposit at a temperature between 100° C. and 400° C., and (iii) optionally depositing copper oxide on the oxidized surface of the copper metal deposit. 14. The process according to claim 13 , wherein the step (i) comprises the following successive steps: (a) immersing at least partially the electrically conductive substrate in an acidic aqueous solution containing ions of the copper to be deposited, and (b) applying a current between the electrically conductive substrate and a second electrode. 15. The process according to claim 13 , wherein the step (iii) comprises the following successive steps: (1) immersing at least the part of the electrically conductive substrate covered with the copper metal deposit, the surface of which is oxidized, obtained in the step (ii) in a solution containing copper ions, and (2) applying a potential between the electrically conductive substrate and a second electrode, the electric potential applied to the electrically conductive substrate being negative and then positive, wherein the step (iii) may be repeated once or several times. 16. The process according to claim 14 , wherein the current of step (b) has a current density comprised between 0.1 mA/cm 2 and 5 A/cm 2 . 17. The process according to claim 14 , wherein the acidic aqueous solution containing ions of the copper to be deposited is an acidic aqueous solution containing a water-soluble salt of the copper to be deposited. 18. The process according to claim 17 , wherein the water-soluble salt of the copper to be deposited is selected from CuSO 4 , CuCl 2 , Cu(ClO 4 ) 2 , and a mixture thereof.

Assignees

Inventors

Classifications

  • C25D7/00Primary

    Electroplating characterised by the article coated · CPC title

  • of copper · CPC title

  • Electrodeposition · CPC title

  • consisting of a single catalytic element or catalytic compound · CPC title

  • After-treatment of electroplated surfaces · CPC title

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What does patent US11661662B2 cover?
The present invention relates to an electrode comprising an electrically conductive substrate of which at least one portion of the surface is covered with a metal deposit of copper, the surface of said deposit being in an oxidised, sulphurised, selenised and/or tellurised form and the deposit having a specific surface area of more than 1 m2/g; a method for preparing such an electrode; and a met…
Who is the assignee on this patent?
Paris Sciences Et Lettres—Quartier Latin, Centre Nat Rech Scient, Univ Sorbonne, and 1 more
What technology area does this patent fall under?
Primary CPC classification C25D7/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 30 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).