Multi-step integrated circuit handling process and apparatus

Patent metadata

Field	Value
Publication number	US-11659669-B2
Application number	US-201816641720-A
Country	US
Kind code	B2
Filing date	Aug 16, 2018
Priority date	Aug 30, 2017
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

One exemplary aspect relates to a process and apparatus for selectively changing adhesion strength between a flexible substrate and a carrier at specific locations to facilitate shipping and subsequent removal of the flexible substrate from the carrier. The process includes providing a flexible substrate comprising a plurality of integrated circuits thereon providing a carrier for the flexible substrate and adhering the flexible substrate to the carrier by creating an interface between the flexible substrate and the carrier. The process further includes changing the adhesion force between the flexible substrate and the carrier at selected locations by non-uniform treatment of the interface between the flexible substrate and the carrier with an electromagnetic radiation source (e.g. a laser, flashlamp, high powered LED, an infrared radiation source or the like) so as to decrease or increase the adhesion force between a portion of the flexible substrate and the carrier at the selected location.

First claim

The invention claimed is:

1. A process that selectively changes adhesion strength between a flexible substrate that includes a plurality of integrated circuits (ICs), each of the plurality of integrated circuits comprising a respective group of terminals, and a carrier at specific locations, the process comprising:
providing the carrier with the flexible substrate, comprising the plurality of ICs thereon, adhered to the carrier so as to create an interface between the flexible substrate and the carrier;
increasing an adhesion force between the flexible substrate and the carrier at one or more selected locations by non-uniform treatment of the interface between the flexible substrate and the carrier with a focussed electromagnetic radiation source; and
following the non-uniform treatment of the interface between the flexible substrate and the carrier with the focussed electromagnetic radiation source, uniformly treating the interface between the flexible substrate and the carrier with an unfocussed electromagnetic radiation source to decrease the adhesion force between the flexible substrate and the carrier.

2. The process according to claim 1 , wherein the non-uniform treatment increases the adhesion force between the flexible substrate and the carrier in at least one part of the flexible substrate comprising one IC of the plurality of ICs and reduces the adhesion force between the flexible substrate and the carrier in at least one further part of the flexible substrate comprising the one IC, or wherein the non-uniform treatment of the interface between the flexible substrate and the carrier increases adhesion between the flexible substrate and the carrier in a plurality of parts of the flexible substrate wherein each part comprises one IC of the plurality of ICs and reduces adhesion between the flexible substrate and the carrier in at least one further portion of the same plurality of parts of the flexible substrate, wherein each part of the plurality parts of the flexible substrate comprises the one IC.

3. The process according to claim 1 , wherein the interface comprises an interlayer.

4. The process according to claim 3 , wherein the interlayer comprises at least one: an epoxy adhesive; titanium metal; an adhesive, wherein the adhesive is one or more of an engineering adhesive which adsorbs electromagnetic radiation at a particular wavelength or a thermally activated adhesive; and a primer layer, wherein the primer layer comprises an adhesion promoter, and wherein the adhesion promoter is a silane-based material.

5. The process according to claim 3 , wherein the interlayer is partially patterned, and the interlayer provides a portion, portions, or a whole of the interface between the flexible substrate and the carrier.

6. The process according to claim 3 , wherein the interlayer forms at least one of: the interface between the flexible substrate and the carrier in at least the selected locations; the interface between the flexible substrate and the carrier along one or more edges of each, IC; the interface between the flexible substrate and the carrier in the area of the flexible substrate including each, IC and excluding one or more edges of each, IC.

7. The process according to claim 1 , wherein the flexible substrate is formed of a plurality of die, each comprising an IC, and wherein the flexible substrate is cut into a plurality of die each comprising an IC.

8. The process according to claim 1 , wherein the one or more selected locations comprise a portion but not all of each die of the flexible substrate.

9. The process according to claim 1 , wherein the non-uniform treatment of the flexible substrate with the focused electromagnetic radiation source comprises:
avoiding the one or more selected locations,
reducing the power of the electromagnetic radiation in the selected locations, or
scanning the electromagnetic radiation source across the flexible substrate in a non-step wise manner, thus changing the adhesion profile between the flexible substrate and the carrier, and, wherein the change in the adhesion force is realized through a perforated pattern of consecutive ablation and non- or partial-ablation of the flexible substrate between each die, and, wherein the wavelength of the electromagnetic radiation is changed to control at least one of an ablation of the substrate material and the interlayer at the interface between the flexible substrate and the carrier.

10. The process according to claim 1 , wherein the providing step further comprises:
arranging the plurality of ICs in a regular array on the carrier, with a repetition interval of a distance D1 in a first direction, and wherein the non-uniform treatment changes the adhesion force between groups of the plurality of ICs and the carrier with a treatment repetition interval based on the expression n×D1 in the corresponding first direction wherein n is an integer greater than or equal to 2.

11. The process according to claim 1 , wherein the one or more selected locations are at least one of:
edges, of a die,
edges of each die,
corners of a die,
corners of each die,
a leading edge of a die,
a leading edge of each die,
a trailing edge of a die, and
a trailing edge of each die.

12. An apparatus for selectively changing adhesion strength between a flexible substrate and a carrier at specific locations, the apparatus comprising:
a carriage configured to support an assembly comprising the flexible substrate adhered to the carrier and having an interface therebetween, the flexible substrate comprising a plurality of integrated circuits (ICs) thereon,
a focussed electromagnetic radiation source configured to emit focussed electromagnetic radiation of a pre-selected wavelength to non-uniformly treat the interface between the flexible substrate and the carrier to increase an adhesion force between the flexible substrate and the carrier at one or more selected location;
and an unfocussed electromagnetic radiation source configured to emit unfocussed electromagnetic radiation to uniformly treat the interface between the flexible substrate and the carrier to decrease the adhesion force between the flexible substrate and the carrier in all areas following the non-uniform treatment of the interface between the flexible substrate and the carrier.

Assignees

• Pragmatic Printing Ltd

Inventors

• Price Richard
• Devenport Stephen
• Cobb Brian

Classifications

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/7418

  of passive members, e.g. a chip mounting substrate · CPC title

• H10P72/7414

  the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title