Light emitting device having a substrate with a pattern of protrusions and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11658264-B2
Application number	US-202017025254-A
Country	US
Kind code	B2
Filing date	Sep 18, 2020
Priority date	Jul 9, 2018
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

First claim

What is claimed is:

1. A light emitting device, comprising:
a substrate;
a pattern of a plurality of protrusions protruding from the substrate in a first direction, the plurality of protrusions arranged side by side in a second direction being perpendicular to the first direction;
a first semiconductor layer provided on the substrate;
an active layer provided on the first semiconductor layer; and
a second semiconductor layer provided on the active layer, wherein:
each of the protrusions includes:
a first layer integrally formed with the substrate and protruding from an upper surface of the substrate in the first direction; and
a second layer provided on the first layer and formed of a material different from that of the first layer, wherein a distance between centers of two adjacent protrusions in the second direction corresponds to a pitch, and a ratio of a diameter of the protrusion to the pitch of the protrusion pattern is about 0.8 to about 1.0;

voids aligned with a side of the plurality of protrusions in the second direction, wherein the voids are located adjacent to an upper portion of the first layer near an edge of an interface between the first layer and the second layer;
wherein a refractive index of the first layer is greater than that of the second layer;
and
wherein the sum of the heights of the first layer and the second layer is more than 1.7 μm.

2. The light emitting device of claim 1 , wherein the diameter of each of the protrusions is about 2.5 μm to about 3.5 μm, and the pitch is about 2.5 μm or more and about 3.5 μm or less.

3. The light emitting device of claim 2 , wherein the diameter of each of the protrusions is about 2.6 μm to about 2.8 μm, and the pitch is about 2.9 μm to about 3.1 μm.

4. The light emitting device of claim 3 , wherein the diameter of each of the protrusions is about 2.8 μm.

5. The light emitting device of claim 1 , wherein a ratio of a height of the first layer to that of the second layer in the first direction is about 0.2 to about 1.5.

6. The light emitting device of claim 5 , wherein a ratio of the height the first layer to that of the second layer in the first direction is about 0.75 to about 1.5.

7. The light emitting device of claim 6 , wherein the height of the second layer is greater than that of the first layer.

8. The light emitting device of claim 1 , wherein the diameter of the protrusion is equal to or smaller than the pitch.

9. The light emitting device of claim 1 , wherein an inclination degree of a side surface of the first layer relative to a plane perpendicular to the first direction is greater than that of at least a portion of a side surface of the second layer relative to the plane perpendicular to the first direction.

10. A light emitting device, comprising:
a substrate;
a pattern of a plurality of protrusions including a first layer formed integrally with the substrate and protruding from an upper surface of the substrate in a first direction, and a second layer provided on the first layer and formed of a material different from that of the first layer; and
voids aligned with a side of the plurality of protrusions in a second direction perpendicular to the first direction, wherein the voids are located adjacent to an upper portion of the first layer near an edge of an interface between the first layer and the second layer;
wherein a ratio of a height of the second layer to that of the first layer is greater than 2.5 and less than 9.5;
wherein a refractive index of the first layer is greater than that of the second layer;
and
wherein the sum of the heights of the first layer and the second layer is more than 1.7 μm.

11. The light emitting device of claim 10 , wherein a height of the first layer is about 0.25 μm or more and about 0.55 μm or less.

12. The light emitting device of claim 10 , further comprising a light emitting stack on the substrate, wherein the light emitting stack is configured to emit light.

13. The light emitting device of claim 12 , wherein the light emitting stack includes:
a first semiconductor layer provided on the substrate;
an active layer provided on the first semiconductor layer; and
a second semiconductor layer provided on the active layer, and
the voids are provided in the first semiconductor layer.

14. The light emitting device of claim 10 , wherein an inclination degree of a side surface of the first layer relative to a plane perpendicular to the first direction is greater than that of at least a portion of a side surface of the second layer relative to the plane perpendicular to the first direction.

15. The light emitting device of claim 14 , wherein an upper portion of the side surface of the second layer is rounded.

16. The light emitting device of claim 10 , wherein the voids have a triangular shape when viewed on a plane perpendicular to the upper surface of the substrate.

17. The light emitting device of claim 10 , wherein an upper surface of the first layer has a circular shape and the voids are located a vertexes of a regular hexagon inscribed in the circular shape of the first layer.

18. The light emitting device of claim 10 , wherein the voids have a triangular shape when viewed on a plane perpendicular to the upper surface of the substrate.

19. The light emitting device of claim 10 , wherein an upper surface of the first layer has a circular shape and the voids are located a vertexes of a regular hexagon inscribed in the circular shape of the first layer.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Min Dae Hong
• Yoon Jun Ho
• Gwak Woo Cheol
• Huh Jin Woo
• Baek Yong Hyun

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10H20/82 Primary

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/8215

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title