Light emitting device

Patent metadata

Field	Value
Publication number	US-11658259-B2
Application number	US-202217589192-A
Country	US
Kind code	B2
Filing date	Jan 31, 2022
Priority date	Aug 20, 2019
Publication date	May 23, 2023
Grant date	May 23, 2023

Abstract

A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

First claim

What is claimed is:

1. A light emitting device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a dielectric layer on the second semiconductor layer;
an n-contact on the first semiconductor layer; and
a plurality of p-contacts comprising a first p-contact and a plurality of second p-contacts on the second semiconductor layer,
wherein the first p-contact is closer to the n-contact than the plurality of second p-contacts,
wherein no p-contact is between the first p-contact and the n-contact, and
wherein, when viewed in plan, an area of the first p-contact is greater than an area of each of the plurality of second p-contacts.

2. The light emitting device of claim 1 , wherein the n-contact is disposed adjacent an edge of the light emitting device.

3. The light emitting device of claim 2 , further comprising another n-contact disposed adjacent another edge opposite to the edge of the light emitting device with respect to a central line.

4. The light emitting device of claim 3 , wherein the other n-contact is symmetrical to the n-contact with respect to the central line of the light emitting device.

5. The light emitting device of claim 1 , further comprising another first p-contact symmetrical to the first p-contact with respect to a central line of the light emitting device.

6. The light emitting device of claim 1 , wherein the n-contact is disposed adjacent a center of the light emitting device.

7. The light emitting device of claim 1 , wherein the n-contact is surrounded by the active layer, the second semiconductor layer, and the first p-contact.

8. The light emitting device of claim 1 , wherein, when viewed in plan, the first p-contact has a linear shape extending along a circumference of the n-contact.

9. The light emitting device of claim 8 , wherein a distance between the first p-contact and the n-contact ranges from 1 μm to 100 μm.

10. A light emitting device, comprising:
a first semiconductor layer including a recessed region and a mesa region;
a second semiconductor layer on the mesa region of the first semiconductor layer, the second semiconductor layer exposing the recessed region of the first semiconductor layer;
an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a dielectric layer on the second semiconductor layer, the dielectric layer having a plurality of contact holes comprising a first contact hole and a plurality of second contact holes;
a first electrode on the first semiconductor layer in the recessed region;
a second electrode on the dielectric layer;
an insulating layer on the second electrode, and on the first semiconductor layer in the recessed region, the insulating layer covering an inclined side surface of the first semiconductor layer, the active layer and the second semiconductor layer, the insulating layer having a first through hole in the recessed region and a second through hole in the mesa region;
an n-contact where the first electrode is connected to the first semiconductor layer through the first through hole in the recessed region; and
a plurality of p-contacts comprising a first p-contact where the second electrode is connected to the second semiconductor layer through the first contact hole, and a plurality of second p-contacts where the second electrode is connected to the second semiconductor layer through the plurality of second contact holes in the mesa region,
wherein the first p-contact is closer to the n-contact than the plurality of second p-contacts,
wherein no p-contact is between the first p-contact and the n-contact, and
wherein, when viewed in plan, an area of the first p-contact is greater than an area of each of the plurality of second p-contacts.

11. The light emitting device of claim 10 , wherein, when viewed in plan, the recessed region surrounds the mesa region.

12. The light emitting device of claim 11 , wherein, when viewed in plan, the n-contact is disposed adjacent a center of a first side of the light emitting device.

13. The light emitting device of claim 11 , wherein, when viewed in plan, the n-contact has a straight line shape.

14. The light emitting device of claim 10 , wherein, when viewed in plan, the mesa region surrounds the recessed region.

15. The light emitting device of claim 14 , wherein the n-contact has a circular shape, and
wherein the p-contact has a circular ring shape.

16. A light emitting device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a dielectric layer on the second semiconductor layer;
a plurality of n-contacts on the first semiconductor layer; and
a plurality of p-contacts comprising a plurality of first p-contacts and a plurality of second p-contacts on the second semiconductor layer,
wherein each of the plurality of first p-contacts is closer to a corresponding one of the plurality of n-contacts than each of the plurality of second p-contacts,
wherein no p-contact is between each of the plurality of first p-contacts and the corresponding one of the plurality of n-contacts, and
wherein, when viewed in plan, an area of each of the plurality of first p-contacts is greater than an area of each of the plurality of second p-contacts.

17. The light emitting device of claim 16 , wherein the plurality of n-contacts comprise first and second edge n-contacts respectively disposed adjacent opposite edges of the light emitting device.

18. The light emitting device of claim 17 , wherein the plurality of n-contacts further comprises an inner n-contact surrounded by the active layer and the second semiconductor layer.

19. The light emitting device of claim 16 , wherein, when viewed in plan, each of the plurality of first p-contacts has a linear shape extending while maintaining substantially same distance from the corresponding one of the plurality of n-contacts.

20. The light emitting device of claim 19 , wherein the distance between each of the plurality of first p-contacts and the corresponding one of the plurality of n-contacts ranges from 1 μm to 100 μm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jang Jeonghwan
• Kim Jae-Yoon
• Ko Sungwon
• Kwak Junghee
• Lee Sangseok
• Lee Suyeol
• Chae Seungwan
• Choi Pun Jae

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/81

  Bodies · CPC title

• H10H20/831 Primary

  characterised by their shape · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title