Magnetic domain wall movement element and magnetic recording array

Patent metadata

Field	Value
Publication number	US-11653573-B2
Application number	US-202017039244-A
Country	US
Kind code	B2
Filing date	Sep 30, 2020
Priority date	Oct 1, 2019
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

A magnetic domain wall movement element includes a wiring layer containing a ferromagnetic material, a non-magnetic layer in contact with the first surface of the wiring layer, a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and a second conductive layer connected to the wiring layer at a distance from the first conductive layer. A first part of the connection face of the first conductive layer is directly connected to the wiring layer, and a second part of the connection face other than the first part is connected to the wiring layer via the non-magnetic layer.

First claim

What is claimed is:

1. A magnetic domain wall movement element comprising:
a wiring layer containing a ferromagnetic material;
a non-magnetic layer in contact with a first surface of the wiring layer;
a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material;
a second conductive layer connected to the wiring layer at a distance from the first conductive layer;
a first part of a connection face of the first conductive layer;
a part of the wiring layer that is in contact with the first part of the connection face;
a second part of the connection face other than the first part; and
another part of the wiring layer that is in contact with a part of the non-magnetic layer that is in contact with the second part.

2. The magnetic domain wall movement element according to claim 1 , wherein an area of the first part is wider than an area of the second part.

3. The magnetic domain wall movement element according to claim 1 , wherein the connection face of the first conductive layer is recessed in a lamination direction, and a part of the non-magnetic layer is fitted in the recess of the connection face.

4. The magnetic domain wall movement element according to claim 1 , wherein the first surface of the wiring layer is recessed in a lamination direction, and the non-magnetic layer is fitted in the recess of the first surface.

5. The magnetic domain wall movement element according to claim 1 , wherein the non-magnetic layer located between the first conductive layer and the wiring layer becomes thinner as it moves away from a first end of the connection face on a side near the second conductive layer.

6. The magnetic domain wall movement element according to claim 1 , wherein an average thickness of the non-magnetic layer between the first conductive layer and the wiring layer is 10 Å or less.

7. The magnetic domain wall movement element according to claim 1 , wherein the second conductive layer contains a ferromagnetic material and a part of the wiring layer is in contact with a first part of a connection face of the second conductive layer, and another part of the wiring layer is in contact with a part of the non-magnetic layer which is in contact with a second part of the connection face of the second conductive layer other than the first part.

8. The magnetic domain wall movement element according to claim 1 , wherein the second conductive layer contains a ferromagnetic material and a thickness of the non-magnetic layer at a position located between the second conductive layer and the wiring layer is thinner than a thickness of the non-magnetic layer at a position which overlaps a first end of a connection face of the second conductive layer on a side near the first conductive layer in plan view.

9. The magnetic domain wall movement element according to claim 1 , further comprising:
a ferromagnetic layer located above a second surface of the wiring layer opposite the first surface; and
a second non-magnetic layer located between the ferromagnetic layer and the wiring layer.

10. The magnetic domain wall movement element according to claim 9 , wherein the non-magnetic layer has a thickness changing portion that becomes thinner as a distance from the ferromagnetic layer increases and the thickness changing portion does not overlap the ferromagnetic layer when viewed from a lamination direction.

11. The magnetic domain wall movement element according to claim 9 , wherein the non-magnetic layer has a thickness changing portion that becomes thinner as a distance from the ferromagnetic layer increases and a part of the thickness changing portion overlaps the ferromagnetic layer when viewed from a lamination direction.

12. A magnetic recording array comprising a plurality of the magnetic domain wall movement elements according to claim 1 .

13. A magnetic domain wall movement element, comprising:
a wiring layer containing a ferromagnetic material;
a non-magnetic layer in contact with a first surface of the wiring layer;
a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and
a second conductive layer connected to the wiring layer at a distance from the first conductive layer,
wherein the first conductive layer is connected to the wiring layer via the non-magnetic layer, and
a thickness of the non-magnetic layer at a position located between the first conductive layer and the wiring layer is thinner than a thickness of the non-magnetic layer at a position which overlaps a first end of a connection face of the first conductive layer on a side near the second conductive layer in plan view.

14. The magnetic domain wall movement element according to claim 13 , wherein the non-magnetic layer located between the first conductive layer and the wiring layer becomes thinner as it moves away from the first end of the connection face on the side near the second conductive layer.

15. The magnetic domain wall movement element according to claim 13 , wherein an average thickness of the non-magnetic layer between the first conductive layer and the wiring layer is 10 Å or less.

16. The magnetic domain wall movement element according to claim 13 , wherein the second conductive layer contains a ferromagnetic material and a part of the wiring layer is in contact with a first part of a connection face of the second conductive layer, and another part of the wiring layer is in contact with a part of the non-magnetic layer which is in contact with a second part of the connection face of the second conductive layer other than the first part.

17. The magnetic domain wall movement element according to claim 13 , wherein the second conductive layer contains a ferromagnetic material and a thickness of the non-magnetic layer at a position located between the second conductive layer and the wiring layer is thinner than a thickness of the non-magnetic layer at a position which overlaps a first end of a connection face of the second conductive layer on a side near the first conductive layer in the plan view.

18. The magnetic domain wall movement element according to claim 13 , further comprising:
a ferromagnetic layer located above a second surface of the wiring layer opposite the first surface; and
a second non-magnetic layer located between the ferromagnetic layer and the wiring layer.

19. The magnetic domain wall movement element according to claim 15 , wherein the non-magnetic layer has a thickness changing portion that becomes thinner as a distance from the ferromagnetic layer increases and the thickness changing portion does not overlap the ferromagnetic layer when viewed from a lamination direction.

20. The magnetic domain wall movement element according to claim 18 , wherein the non-magnetic layer has a thickness changing portion that becomes thinner as a distance from the ferromagnetic layer increases and a part of the thickness changing portion overlaps the ferromagnetic layer when viewed from a lamination direction.

21. A magnetic recording array comprising a plurality of the magnetic domain wall movement elements according to claim 13 .

Assignees

• Tdk Corp

Inventors

• Ashida Takuya
• Shibata Tatsuo

Classifications

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/80 Primary

  Constructional details · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title

• H10B61/00 Primary

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• G11C11/1675 Primary

  Writing or programming circuits or methods · CPC title