Optical device, photoelectric conversion apparatus, and fuel production apparatus

Patent metadata

Field	Value
Publication number	US-11652185-B2
Application number	US-201916529420-A
Country	US
Kind code	B2
Filing date	Aug 1, 2019
Priority date	Oct 4, 2017
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

An optical device includes an intermetallic compound of a first metal and a second metal having a lower work function than the first metal, or a solid-solution alloy of the first metal and the second metal and includes an n-type semiconductor in Schottky junction with the intermetallic compound or the solid-solution alloy.

First claim

What is claimed is:

1. An optical device comprising:
an intermetallic compound of a first metal and a second metal having a lower work function than the first metal, or a solid-solution alloy of the first metal and the second metal; and
an n-type semiconductor in Schottky junction with the intermetallic compound or the solid-solution alloy,
wherein the optical device detects near-infrared light, and
wherein the amount of the first metal contained in the intermetallic compound or the solid-solution alloy is larger than the amount of the second metal contained in the intermetallic compound or the solid-solution alloy.

2. The optical device according to claim 1 ,
wherein an energy of the near-infrared light is lower than a band gap energy of the n-type semiconductor.

3. The optical device according to claim 1 ,
wherein the n-type semiconductor is a silicon (Si) semiconductor.

4. The optical device according to claim 1 ,
wherein the height of the Schottky barrier of the Schottky junction is lower than the energy of the near-infrared light.

5. The optical device according to claim 1 ,
wherein the first metal is at least one metal selected from a group consisting of gold (Au), silver (Ag), copper (Cu), and aluminum (Al), and
the second metal is at least one metal selected from a group consisting of titanium (Ti), chromium (Cr), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), manganese (Mn), iron (Fe), zinc (Zn), gallium (Ga), and tantalum (Ta).

6. The optical device according to claim 1 ,
wherein the intermetallic compound or the solid-solution alloy is Au 4 Ti.

7. The optical device according to claim 1 ,
wherein the n-type semiconductor is an inorganic semiconductor.

8. The optical device according to claim 1 ,
wherein the intermetallic compound or the solid-solution alloy has a comb-like structure.

9. The optical device according to claim 1 , further comprising at least one nanoparticle,
wherein the intermetallic compound or the solid-solution alloy is contained in the at least one nanoparticle.

10. The optical device according to claim 9 ,
wherein a particle diameter of each of the at least one nanoparticle is 1 nm or more and 200 nm or less.

11. The optical device according to claim 9 , further including a metal film,
wherein the at least one nanoparticle is a plurality of nanoparticles, and
the metal film electrically connects the plurality of nanoparticles to each other.

12. The optical device according to claim 11 ,
wherein the metal film contains the first metal and the second metal.

13. The optical device according to claim 11 ,
wherein the metal layer covers at least part of a surface of the n-type semiconductor.

14. The optical device according to claim 9 ,
wherein each of the at least one nanoparticle has a cavity surrounded by the intermetallic compound or the solid-solution alloy.

15. The optical device according to claim 9 ,
wherein each of the at least one nanoparticle includes a core portion including at least one selected from a group consisting of gold (Au), silver (Ag), copper (Cu) aluminum (Al), a polymer material, and silica, and
in each of the at least one nanoparticle, the intermetallic compound or the solid-solution alloy covers at least part of the core portion.

16. The optical device according to claim 15 ,
wherein the core portion is substantially composed of gold (Au), silver (Ag), copper (Cu), aluminum (Al), a polymer material, or silica.

17. The optical device according to claim 15 ,
wherein in each of the at least one nanoparticle, the intermetallic compound or the solid-solution alloy covers the entire core portion.

18. The optical device according to claim 15 ,
wherein in each of the at least one nanoparticle, the intermetallic compound or the solid-solution alloy is separated into a plurality of portions, and
the plurality of portions are distributed, around the core portion, with a gap between the plurality of portions.

19. The optical device according to claim 9 , further comprising a light source which emits light having energy that is lower than or equal to a band gap energy of the n-type semiconductor and that corresponds to a plasmon resonance wavelength of the at least one nanoparticle.

20. The optical device according to claim 9 ,
wherein the n-type semiconductor contains at least one selected from a group consisting of a silicon semiconductor, a germanium semiconductor, and a gallium arsenide semiconductor, and
a surface plasmon resonance wavelength of the at least one nanoparticle is 900 nm or more.

21. The optical device according to claim 9 ,
wherein the n-type semiconductor contains at least one selected from a group consisting of a titanium oxide (TiO 2 ) semiconductor, a gallium nitride (GaN) semiconductor, and a strontium titanate (SrTiO 3 ) semiconductor, and
a surface plasmon resonance wavelength of the at least one nanoparticle is 400 nm or more.

22. A photoelectric conversion apparatus comprising:
an optical device according to claim 1 ;
a first electrode; and
a conducting wire that electrically connectsthe first electrode to the intermetallic compound or the solid-solution alloy,
wherein the n-type semiconductor has a first surface facing the intermetallic compound or the solid-solution alloy and a second surface opposite to the first surface, and
the first electrode is in contact with the second surface of the n-type semiconductor.

23. The photoelectric conversion apparatus according to claim 22 , further comprising:
an insulating film disposed on the first surface of the n-type semiconductor; and
a transparent conductive film covering the insulating film and the intermetallic compound or the solid-solution alloy,
wherein the transparent conductive film is not in contact with the n-type semiconductor, and
the conducting wire electrically connects the first electrode to the transparent conductive film.

24. The photoelectric conversion apparatus according to claim 22 ,
wherein the optical device includes: a plurality of nanoparticles containing the intermetallic compound or the solid-solution alloy; a metal film that is disposed on the first surface of the n-type semiconductor and that electrically connects the plurality of nanoparticles to each other; and a second electrode in contact with the metal film, and
the conducting wire electrically connects the first electrode to the second electrode.

25. A fuel production apparatus comprising:
an optical device according to claim 1 ;
a first electrode in contact with the n-type semiconductor in the optical device;
an oxidation reaction vessel that contains a first electrolytic solution and the optical device;
a reduction reaction vessel that contains a second electrolytic solution and a second electrode;
a proton transmission film located at a border between the oxidation reaction vessel and the reduction reaction vessel; and
a conducting wire that connects the first electrode to the second electrode,
wherein the optical device is in contact with the first electrolytic solution, and
the second electrode is in contact with the second electrolytic solution.

26. The fuel production apparatus according to claim 25 ,
wherein the first electrode is platinum, an alloy containing platinum, or a platinum compound, and
when light having energy corresponding to a surface plasmon resonance wavelength of t

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Okamoto Shinya
• Yotsuhashi Satoshi
• Hirasawa Taku

Classifications

• H10F77/206

  for devices having potential barriers · CPC title

• H10F10/18

  Photovoltaic cells having only Schottky potential barriers · CPC title

• H10F30/227 Primary

  the potential barrier being a Schottky barrier · CPC title

• C25B9/19

  with diaphragms · CPC title

• C25B1/04

  by electrolysis of water · CPC title