Three-dimensional oscillator structure

Patent metadata

Field	Value
Publication number	US-11651203-B2
Application number	US-202117555382-A
Country	US
Kind code	B2
Filing date	Dec 18, 2021
Priority date	Sep 27, 2018
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

First claim

The invention claimed is:

1. An oscillator structure, the oscillator structure comprises:
a first column;
a second column parallel to the first column;
a capacitor structure electrically positioned between an insulator-metal transition (IMT) structure and the first column; and
a resistor structure electrically positioned between the IMT structure and the second column.

2. The oscillator structure of claim 1 , further comprising a voltage line, wherein the IMT structure is electrically positioned between the voltage line and the capacitor structure.

3. The oscillator structure of claim 1 , wherein the first column is configured to be coupled with an averager circuit.

4. The oscillator structure of claim 1 , wherein the second column is configured to be coupled with ground.

5. The oscillator structure of claim 1 , wherein the capacitor structure includes a first electrode, a second electrode, and a dielectric material between the first and second electrodes.

6. The oscillator structure of claim 1 , wherein the IMT structure includes a first electrode, a second electrode, and an oxide material positioned between the first electrode and the second electrode.

7. The oscillator structure of claim 1 , wherein the resistor structure includes a first electrode, a second electrode, and a variable resistor positioned between the first electrode and the second electrode.

8. The oscillator structure of claim 7 , wherein the variable resistor is a resistive random-access memory (RRAM), a conductive bridge random-access memory (CBRAM), or a phase change material (PCM), a filamentary oxygen vacancy resistive switching material, an interfacial resistive switching material, a conductive bridge filament material, or a floating gate transistor.

9. The oscillator structure of claim 7 , further comprising a wordline coupled with the variable resistor, wherein the wordline is configured to deliver a signal related to a desired resistance setting of the variable resistor.

10. The oscillator structure of claim 1 , wherein the resistor structure includes a wire.

11. A neural network, comprising:
a first column;
a second column parallel to the first column; and
an oxide oscillator electrically positioned between the first column and the second column, the oxide oscillator including
an insulator-metal transition (IMT) structure electrically coupled with the first column,
a capacitor structure electrically positioned between the IMT structure and the first column, and
a resistor structure electrically positioned between the second column and the IMT structure.

12. The neural network of claim 11 , wherein the oxide oscillator is a first oxide oscillator, further comprising a second oxide oscillator electrically positioned between the first column and a third column.

13. The neural network of claim 12 , wherein the second column and the third column are coupled with ground.

14. The neural network of claim 12 , further comprising a first voltage line electrically coupled with the first oxide oscillator and a second voltage line coupled with the second oxide oscillator.

15. The neural network of claim 12 , wherein the first oxide oscillator is coupled with the second oxide oscillator by the first column.

16. The neural network of claim 11 , wherein the first column is to couple with an averager circuit.

17. A structure, comprising:
a substrate having a surface;
a first column perpendicular to the surface and electrically coupled with an averager circuit;
a second column perpendicular to the surface and electrically coupled with a ground of the substrate; and
an oxide oscillator electrically positioned between the first column and the second column, the oxide oscillator comprising:
a capacitor structure electrically positioned between an insulator-metal transition (IMT) structure and the first column, and
a resistor structure electrically positioned between the IMT structure and the second column.

18. The structure of claim 17 , further comprising an additional oxide oscillator that is electrically positioned between the first column and a third column, wherein the third column is perpendicular to the surface and electrically coupled with the ground of the substrate.

19. The structure of claim 18 , wherein the additional oxide oscillator includes an additional IMT structure electrically coupled with the first column.

20. The structure of claim 19 , further comprising:
a first voltage line electrically coupled with the IMT structure; and
a second voltage line electrically coupled with the additional IMT structure.

Assignees

• Intel Corp

Inventors

• Nikonov Dmitri E
• Karpov Elijah V
• Young Ian A

Classifications

• G06N3/065 Primary

  Analogue means · CPC title

• H03B5/20 Primary

  with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator · CPC title

• G06N3/049

  Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs · CPC title

• H03B7/00

  Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B9/00 takes precedence) · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title