Hard mask-forming composition and method for manufacturing electronic component

Patent metadata

Field	Value
Publication number	US-11650503-B2
Application number	US-201916515612-A
Country	US
Kind code	B2
Filing date	Jul 18, 2019
Priority date	Aug 2, 2018
Publication date	May 16, 2023
Grant date	May 16, 2023

Abstract

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

First claim

What is claimed is:

1. A hard mask-forming composition, which forms a hard mask used in lithography, comprising:
a resin (P) containing an aromatic ring and a polar group; and
a compound (OF)
represented by the following general formula (f1-1-1):

wherein R f11 and R f21 each independently represents a phenyl group or a naphthyl group which may have a substituent selected from the group consisting of a hydroxy group, a carboxy group, a halogen atom, an amino group, a nitro group, a sulfo group, an alkoxy group, an epoxy group, an alkyl group, a halogenated alkyl group, a glycidyl group, and a glycidoxy group; R f31 and R f41 each independently represents a hydrocarbon group having 1 to 20 carbon atoms which may have a substituent, a halogen atom, a nitro group, an amino group, or a sulfo group; X f11 and X f21 each independently represents a polar group; and n f11 and n f21 each independently represents an integer of 0 to 4.

2. The hard mask-forming composition according to claim 1 , wherein the polar group contained in the resin (P) is selected from the group consisting of a hydroxy group, a carboxy group, an amino group, a sulfo group, an alkoxy group, and an epoxy group.

3. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a resin (P-1) having a structural unit (u11) represented by the following general formula (u11-1) and a structural unit (u12) represented by the following general formula (u12-1):

wherein R 11 is a polycyclic aromatic hydrocarbon group having 10 to 30 carbon atoms which may have a substituent; and R 12 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent, or a hydrogen atom.

4. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a phenol resin (P-2) having a structural unit (u21) represented by the following general formula (u21-1) and a structural unit (u22) represented by the following general formula (u22-1):

wherein R 21 is an organic group derived from a phenol compound having at least one hydroxy group; and R 22 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent, or a hydrogen atom.

5. The hard mask-forming composition according to claim 1 , wherein the resin (P) contains a resin (P-3) having a structural unit (u31) represented by the following general formula (u31-1):

wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya x1 is a single bond or a divalent linking group; Wa x1 is a (n ax1 +1)-valent aromatic hydrocarbon group; and n ax1 is an integer of 1 to 3.

6. The hard mask-forming composition according to claim 5 , wherein the resin (P-3) further has a structural unit (u32) represented by the following general formula (u32-1):

wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Y ax3 is a single bond or a divalent linking group; L ax3 is —O—, —COO—, —CON(R′)—, —OCO—, —CONHCO— or —CONHCS— and R′ represents a hydrogen atom or a methyl group, provided that Y ax3 is not —CO— in the case where L ax3 is —O—; and Ra x3 is a hydrogen atom, or a hydrocarbon group which may have a substituent.

7. A method for manufacturing an electronic component, comprising:
forming a hard mask layer (m 1 ) on a support using the hard mask-forming composition according to claim 1 ;
forming a hard mask layer (m 2 ) made of an inorganic material on the hard mask layer (m 1 );
forming a resist film on the hard mask layer (m 2 );
forming a resist pattern on the hard mask layer (m 2 ) by exposing and developing the resist film;
etching the hard mask layer (m 2 ) using the resist pattern as a mask to form an inorganic pattern;
etching the hard mask layer (m 1 ) using the inorganic pattern as a mask to form a resin pattern; and
processing the support with the resin pattern as a mask.

8. A method for manufacturing an electronic component, comprising:
forming a hard mask layer (m 1 ) on a support using the hard mask-forming composition according to claim 1 ;
forming an inorganic pattern made of an inorganic material on the hard mask layer (m 1 );
etching the hard mask layer (m 1 ) using the inorganic pattern as a mask to form a resin pattern; and
processing the support with the resin pattern as a mask.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Tsuchiya Junichi
• Ibata Keiichi

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F7/0752

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• C08G2261/148

  Side-chains having aromatic units · CPC title