Pressure sensor with multiple pressure sensing elements

US11650119B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11650119-B2
Application numberUS-202117448159-A
CountryUS
Kind codeB2
Filing dateSep 20, 2021
Priority dateApr 5, 2019
Publication dateMay 16, 2023
Grant dateMay 16, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A pressure sensor includes a substrate, a first pressure sensing element, a second pressure sensing element, and sensor conditioning circuitry disposed on a first surface of the substrate. The sensor conditioning circuitry is electronically coupled to the first pressure sensing element and the second pressure sensing element, thus multiple pressure sensing elements being disposed on a single substrate can reduce material cost and improve the performance of the pressure sensor.

First claim

Opening claim text (preview).

The invention claimed is: 1. A pressure sensor, comprising: a substrate having a first surface; a first tubing port disposed on the first surface, wherein a first pressure sensing element is disposed within the first tubing port; and a second tubing port disposed on the first surface, wherein a second pressure sensing element is disposed within the second tubing port. 2. The pressure sensor of claim 1 , further comprising: a sensor conditioning circuitry electronically coupled to the first pressure sensing element and the second pressure sensing element. 3. The pressure sensor of claim 2 , wherein the sensor conditioning circuitry is disposed within the first tubing port. 4. The pressure sensor of claim 2 , wherein the sensor conditioning circuitry multiplexes signals from the first pressure sensing element and the second pressure sensing element. 5. The pressure sensor of claim 2 , wherein the sensor conditioning circuitry amplifies signals from the first pressure sensing element and the second pressure sensing element. 6. The pressure sensor of claim 2 , wherein the sensor conditioning circuitry converts analog signals from the first pressure sensing element and the second pressure sensing element to digital signals. 7. The pressure sensor of claim 2 , wherein the sensor conditioning circuitry is a signal conditioning application-specific integrated circuit (ASIC). 8. The pressure sensor of claim 1 , further comprising: a first torus piece surrounding the first tubing port; and a second torus piece surrounding the second tubing port. 9. The pressure sensor of claim 8 , wherein the first torus piece and the second torus piece comprise at least one of rubber material or silicon material. 10. The pressure sensor of claim 1 , wherein the first pressure sensing element is a first micro-electro-mechanical system (MEMS) pressure sensing die, wherein the second pressure sensing element is a second MEMS pressure sensing die. 11. The pressure sensor of claim 1 , wherein the first pressure sensing element and the second pressure sensing element are disposed on the first surface of the substrate. 12. The pressure sensor of claim 1 , further comprising: a third tubing port disposed on the first surface, wherein a third pressure sensing element is disposed within the third tubing port. 13. The pressure sensor of claim 12 , further comprising: a sensor conditioning circuitry electronically coupled to the first pressure sensing element, the second pressure sensing element, and the third pressure sensing element. 14. The pressure sensor of claim 13 , wherein the sensor conditioning circuitry is disposed within the second tubing port. 15. The pressure sensor of claim 13 , wherein the sensor conditioning circuitry multiplexes signals from the first pressure sensing element, the second pressure sensing element, and the third pressure sensing element. 16. The pressure sensor of claim 13 , wherein the sensor conditioning circuitry amplifies signals from the first pressure sensing element, the second pressure sensing element and the third pressure sensing element. 17. The pressure sensor of claim 13 , wherein the sensor conditioning circuitry converts analog signals from the first pressure sensing element, the second pressure sensing element, and the third pressure sensing element to digital signals. 18. The pressure sensor of claim 13 , wherein the sensor conditioning circuitry is a signal conditioning application-specific integrated circuit (ASIC). 19. The pressure sensor of claim 12 , wherein the first pressure sensing element is a first micro-electro-mechanical system (MEMS) pressure sensing die, wherein the second pressure sensing element is a second MEMS pressure sensing die, wherein the third pressure sensing element is a third MEMS pressure sensing die. 20. The pressure sensor of claim 12 , wherein the first pressure sensing element, the second pressure sensing element, and the third pressure sensing element are disposed on the first surface of the substrate.

Assignees

Inventors

Classifications

  • Details about the mounting of the sensor to support or covering means · CPC title

  • G01L15/00Primary

    Devices or apparatus for measuring two or more fluid pressure values simultaneously · CPC title

  • Monolithic housings, e.g. molded or one-piece housings · CPC title

  • Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation · CPC title

  • G01L19/143Primary

    Two part housings · CPC title

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What does patent US11650119B2 cover?
A pressure sensor includes a substrate, a first pressure sensing element, a second pressure sensing element, and sensor conditioning circuitry disposed on a first surface of the substrate. The sensor conditioning circuitry is electronically coupled to the first pressure sensing element and the second pressure sensing element, thus multiple pressure sensing elements being disposed on a single su…
Who is the assignee on this patent?
Honeywell Int Inc
What technology area does this patent fall under?
Primary CPC classification G01L15/00. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 16 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).