Scanning electron microscope and a method for overlay monitoring

Patent metadata

Field	Value
Publication number	US-11646173-B2
Application number	US-202117369746-A
Country	US
Kind code	B2
Filing date	Jul 7, 2021
Priority date	Jan 8, 2019
Publication date	May 9, 2023
Grant date	May 9, 2023

Abstract

A scanning electron microscope and a method for evaluating a sample, the method may include (a) illuminating the sample with a primary electron beam, (b) directing secondary electrons emitted from the sample and propagated above a first scintillator, towards an upper portion of the first scintillator, wherein the first scintillator and a second scintillator are positioned between the sample and a column electrode of the column; wherein the first scintillator is positioned above the second scintillator; (c) detecting the secondary electrons by the first scintillator; (d) directing backscattered electrons emitted from the sample towards a lower portion of the second scintillator; and (e) detecting the backscattered electrons by the second scintillator.

First claim

We claim:

1. A scanning electron microscope, comprising: a column that is configured to illuminate a sample with a primary electron beam; a column electrode; a first scintillator; a second scintillator that is positioned below the first scintillator; a high power supply system; wherein the first scintillator and the second scintillator are positioned between the column electrode and the sample; wherein the high power supply system is configured to bias the sample, the column electrode, the first scintillator and the second scintillator; wherein the first scintillator is configured to detect secondary electrons that were emitted from the sample, propagated above the first scintillator and returned towards the first scintillator; wherein the second scintillator is configured to detect backscattered electrons that were emitted from the sample.

2. The scanning electron microscope according to claim 1 wherein the first scintillator is configured to emit light of a first color in response to the detection of the secondary electrons; and wherein the second scintillator is configured to emit light of a second color that differs from the first color in response to the detection of the backscattered electrons.

3. The scanning electron microscope according to claim 2 comprising a light detector that is coupled to the first and second scintillator via a single light guide.

4. The scanning electron microscope according to claim 1 comprising a first light detector that is coupled to the first scintillator via a first light guide and a second light detector that is coupled to the second scintillator via a second light guide.

5. The scanning electron microscope according to claim 1 comprising at least one light detector, at least one light guide that is coupled between the first scintillator, the second scintillator and the at least one light detector, and an image processor that is coupled to the at least one light detector.

6. The scanning electron microscope according to claim 5 wherein the image processor is configured to generate an overlay image based on signals generated by the at least one light detector.

7. The scanning electron microscope according to claim 1 wherein the first scintillator comprises a first aperture, wherein the second scintillator comprises a second aperture; wherein the column is configured to direct the primary electron beam through the first aperture and through the second aperture; wherein the first scintillator is configured to detect the secondary electrons that passed through the first aperture and through the second aperture.

8. The scanning electron microscope according to claim 1 wherein the high power supply system is configured to positively bias the sample, to positively bias the first scintillator and the second scintillator in relation to the sample, and to negatively bias the column electrode in relation to the first and second scintillator.

9. The scanning electron microscope according to claim 1 wherein the high power supply system is configured to positively bias the sample by a voltage that exceeds ten kilovolts, to bias the first scintillator and the second scintillator by a voltage that exceeds fifteen kilovolts.

10. The scanning electron microscope according to claim 1 wherein a distance between the column electrode and the first scintillator is of a millimetric scale and wherein a distance between the second scintillator and the sample is of a millimetric scale.

11. A method for overlay monitoring, the method comprises:
illuminating a sample with a primary electron beam generated by a column of a scanning electron microscope;
directing secondary electrons emitted from the sample and propagated above a first scintillator, towards an upper portion of the first scintillator, wherein the first scintillator and a second scintillator are positioned between the sample and a column electrode of the column; wherein the first scintillator is positioned above the second scintillator;
detecting the secondary electrons by the first scintillator;
directing backscattered electrons emitted from the sample towards a lower portion of the second scintillator; and
detecting the backscattered electrons by the second scintillator.

12. The method according to claim 11 comprising:
emitting, by the first scintillator, light of a first color in response to the detecting of the secondary electrons; and emitting, by the second scintillator, light of a second color that differs from the first color in response to the detecting of the backscattered electrons.

13. The method according to claim 12 comprising conveying the light of the first color and the light of the second color to a light detector over a single light guide.

14. The method according to claim 11 comprising conveying light emitted from the first scintillator to a first light detector over a first light guide; and
conveying light emitted from the second scintillator to a second light detector over a second light guide.

15. The method according to claim 11 comprising:
conveying detection signals to an image processor; wherein the detection signals are generated by at least one light detector that is coupled by at least one light guide to the first scintillator and to the second scintillator.

16. The method according to claim 15 comprising generating, by the image processor, an overlay image based on the detection signals generated by the at least one light detector.

17. The method according to claim 11 wherein the illuminating comprises directed the primary electron beam through a first aperture formed in the first scintillator, and through a second aperture formed in the second scintillator; and wherein the directing of the secondary electrons comprise directing the secondary electrons through the first aperture through the second aperture.

18. The method according to claim 11 comprising (a) positively biasing, by a high power supply system, the sample, (b) positively biasing, by the high power supply system, the first scintillator and the second scintillator in relation to the sample, and (c) negatively biasing, by the high power supply system, the column electrode in relation to the first and second scintillator.

19. The method according to claim 11 comprising (a) positively biasing, by a high power supply system, the sample by a voltage that exceeds ten kilovolts, (b) biasing, by the high power supply system, the first scintillator and the second scintillator by a voltage that exceeds fifteen kilovolts.

20. The method according to claim 11 wherein a distance between the column electrode and the first scintillator is of a millimetric scale and wherein a distance between the second scintillator and the sample is of a millimetric scale.

Assignees

• Applied Materials Israel Ltd

Inventors

• Asulin Itay
• Weisz Emil
• Vinegrad Eitam Yitzchak
• Lapid Menachem
• Rozensvaig Boris

Classifications

• H01J37/28 Primary

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

• H01J2237/2445

  Photon detectors for X-rays, light, e.g. photomultipliers · CPC title

• H01J2237/24475

  Scattered electron detectors · CPC title

• H01J2237/2448

  Secondary particle detectors · CPC title

• H01J2237/2443

  Scintillation detectors · CPC title