Semiconductor device and method of forming a slot in EMI shielding layer using a plurality of slot lines to guide a laser

Patent metadata

Field	Value
Publication number	US-11640944-B2
Application number	US-202117307437-A
Country	US
Kind code	B2
Filing date	May 4, 2021
Priority date	May 4, 2021
Publication date	May 2, 2023
Grant date	May 2, 2023

Abstract

A semiconductor device has a shielding layer over a semiconductor package. A plurality of slot lines define a location to form a slot in the shielding layer. The slot is formed in the shielding layer by cutting along the slot lines with a laser controlled by a scanner to read the slot lines. The slot lines include a left boundary slot line and right boundary slot line. The slot can be cut in the shielding layer by performing an edge cut along the slot lines, and performing a peel back to form the slot in the shielding layer. Alternatively, the slot can be cut in the shielding layer by performing a first cut in a first direction along the slot lines, and performing a second cut in a second direction opposite the first direction along the slot lines to form the slot in the shielding layer.

First claim

What is claimed:

1. A method of forming a semiconductor device, comprising:
providing a semiconductor package;
forming a shielding layer over the semiconductor package;
providing a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer; and
forming the slot in the shielding layer by cutting at the location along the plurality of slot lines.

2. The method of claim 1 , further including providing a laser to cut along the plurality of slot lines.

3. The method of claim 2 , further including providing a scanner to read the plurality of slot lines and control the laser to cut along the plurality of slot lines.

4. The method of claim 1 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.

5. The method of claim 1 , wherein forming the slot in the shielding layer includes:
performing an edge cut along the plurality of slot lines; and
performing a peel back along a center slot line to form the slot in the shielding layer.

6. The method of claim 1 , wherein forming the slot in the shielding layer includes:
performing a first cut in a first direction along the plurality of slot lines; and
performing a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.

7. A method of forming a semiconductor device, comprising:
forming a shielding layer over the semiconductor device;
providing a plurality of slot lines on the shielding layer; and
forming a slot in the shielding layer by cutting at the location along the plurality of slot lines.

8. The method of claim 7 , further including providing a laser to cut along the plurality of slot lines.

9. The method of claim 8 , further including providing a scanner to read the plurality of slot lines and control the laser to cut along the plurality of slot lines.

10. The method of claim 7 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.

11. The method of claim 7 , wherein forming the slot in the shielding layer includes:
performing an edge cut along the plurality of slot lines; and
performing a peel back along a center slot line to form the slot in the shielding layer.

12. The method of claim 7 , wherein forming the slot in the shielding layer includes:
performing a first cut in a first direction along the plurality of slot lines; and
performing a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.

13. The method of claim 7 , wherein forming the slot in the shielding layer includes a corner edge and vertical sidewalls.

14. A semiconductor device, comprising:
a semiconductor package; and
a shielding layer formed over the semiconductor package with a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer at the location along the plurality of slot lines.

15. The semiconductor device of claim 14 , further including a laser to form the slot along the plurality of slot lines.

16. The semiconductor device of claim 15 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.

17. The semiconductor device of claim 14 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.

18. The semiconductor device of claim 14 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.

19. The semiconductor device of claim 14 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.

20. A semiconductor device, comprising:
a shielding layer formed over the semiconductor device; and
a plurality of slot lines on the shielding layer defining a location for a slot formed in the shielding layer along the plurality of slot lines.

21. The semiconductor device of claim 20 , further including a laser to form the slot along the plurality of slot lines.

22. The semiconductor device of claim 21 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.

23. The semiconductor device of claim 20 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.

24. The semiconductor device of claim 20 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.

25. The semiconductor device of claim 20 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.

26. A semiconductor device, comprising:
a semiconductor package; and
a shielding layer formed over the semiconductor package with a plurality of slot lines on the shielding layer defining a location to form a slot in the shielding layer at the location defined by the plurality of slot lines.

27. The semiconductor device of claim 26 , further including a laser to form the slot along the plurality of slot lines.

28. The semiconductor device of claim 27 , further including a scanner to read the plurality of slot lines and control the laser to form the slot along the plurality of slot lines.

29. The semiconductor device of claim 26 , wherein the plurality of slot lines include a left boundary slot line and a right boundary slot line.

30. The semiconductor device of claim 26 , wherein the slot in the shielding layer includes:
an edge cut along the plurality of slot lines; and
a peel back along a center slot line to form the slot in the shielding layer.

31. The semiconductor device of claim 26 , wherein the slot in the shielding layer includes:
a first cut in a first direction along the plurality of slot lines; and
a second cut in a second direction opposite the first direction along the plurality of slot lines to form the slot in the shielding layer.

Assignees

• Stats Chippac Pte Ltd

Inventors

• Kim Changoh
• Jung Jinhee

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W42/273

  the arrangements being between laterally adjacent chips, e.g. walls between chips · CPC title

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/07232

  Compression bonding, e.g. thermocompression bonding · CPC title