Schottky diode

Patent metadata

Field	Value
Publication number	US-11637210-B2
Application number	US-201816771400-A
Country	US
Kind code	B2
Filing date	Dec 11, 2018
Priority date	Dec 11, 2017
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

First claim

The invention claimed is:

1. A Schottky diode comprising:
a first electrode;
a second electrode;
a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface; and
a body of dielectric material,
wherein
the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction,
at least a portion of the second projection lies outside the first projection,
said second planar region is offset from the first planar region in said first direction, and
one of the first interface and the second interface provides a Schottky contact,
wherein said body of dielectric material comprises a window, and said first interface is arranged inside said window,
wherein said body of semiconductive material comprises a first portion, at least partly filling said window, and a second portion extending laterally from the window and covering at least a portion of a service of said body of dielectric material, and
wherein said second electrode is arranged to cover at least part of the second portion of the body of semiconductive material.

2. The diode in accordance with claim 1 , wherein said second projection lies entirely outside said first projection, whereby a projection, in the first direction, of the second planar region onto the first plane lies completely outside a projection, in the first direction, of the first planar region onto the first plane.

3. The diode in accordance with claim 1 , wherein a portion of said first projection lies inside said second projection.

4. The diode in accordance with claim 3 , wherein a projection, in the first direction, of the second planar region onto the first plane lies completely outside a projection, in the first direction, of the first planar region onto the first plane.

5. The diode in accordance with claim 3 , wherein a portion of a projection, in the first direction, of the first planar region onto the first plane lies inside a projection, in the first direction, of the second planar region onto the first plane.

6. The diode in accordance with claim 1 , further comprising a substrate, said first electrode being arranged on a surface of said substrate.

7. The diode in accordance with claim 1 , wherein said body of dielectric material is arranged to space the second electrode from the first electrode in said first direction.

8. The diode in accordance with claim 1 , wherein the body of semiconductive material comprises a first layer and a second layer, the first interface comprising a portion of the first layer, and the second interface comprising a portion of the second layer.

9. A circuit comprising:
a first and a second diode each comprising:
a first electrode;
a second electrode; and
a body of semi conductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface; and
wherein
the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction,
at least a portion of the second projection lies outside the first projection,
said second planar region is offset from the first planar region in said first direction, and
one of the first interface and the second interface provides a Schottky contact, wherein the first and second planar regions of the first diode are offset from each other by a first distance and the first and second planar regions of the second diode are offset by a second distance from each other, said second distance being different from the first distance, and/or wherein the circuit is an integrated circuit.

Assignees

• Pragmatic Printing Ltd

Inventors

• Alkhalil Feras
• Price Richard
• Cobb Brian

Classifications

• H10D64/23

  Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes · CPC title

• H10D62/124

  Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions · CPC title

• H10D8/051

  of Schottky diodes · CPC title

• H10D8/60 Primary

  Schottky-barrier diodes · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title