X-ray sensing device

Patent metadata

Field	Value
Publication number	US-11635530-B2
Application number	US-202117512639-A
Country	US
Kind code	B2
Filing date	Oct 27, 2021
Priority date	Apr 19, 2021
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

First claim

What is claimed is:

1. An X-ray sensing device, comprising:
a photosensitive element configured to sense light having a first wavelength;
a lead-containing glass overlapping with the photosensitive element; and
an X-ray conversion structure arranged on the lead-containing glass, and the lead-containing glass is located between the photosensitive element and the X-ray conversion structure, wherein the X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength, wherein the X-ray conversion structure comprises:
a scintillator layer;
a metal layer overlapping with the scintillator layer;
an anti-moisture layer surrounding the scintillator layer and the metal layer;
a first flexible substrate having a first surface and a second surface opposite to the first surface, wherein the scintillator layer is formed on the first surface;
an adhesive layer formed on the second surface; and
a second flexible substrate overlapping with the first flexible substrate, wherein the metal layer is formed on the second flexible substrate, and the adhesive layer is adhered to the metal layer, wherein the anti-moisture layer surrounds the first flexible substrate, the scintillator layer, the adhesive layer, the metal layer, and the second flexible substrate.

2. The X-ray sensing device of claim 1 , wherein a weight percentage of lead oxide in the lead-containing glass is 10 wt % to 75 wt %, and a thickness of the lead-containing glass is 0.5 mm to 5 mm.

3. The X-ray sensing device of claim 1 , further comprises:
an active element formed above the lead-containing glass, wherein the photosensitive element includes:
a first electrode electrically connected to the active element, wherein the first electrode comprises a transparent conductive material;
a photosensitive layer formed on the first electrode; and
a second electrode formed on the photosensitive layer, wherein the first electrode is closer to the lead-containing glass than the second electrode.

4. The X-ray sensing device of claim 1 , further includes: an optical glue layer is formed on the lead-containing glass, and the optical glue layer is bonded to the X-ray conversion structure.

5. The X-ray sensing device as described in claim 1 , further comprises:
a substrate overlapping with the lead-containing glass;
an active element formed on the substrate, and the active element and the photosensitive element are located between the substrate and the lead-containing glass, wherein the photosensitive element comprises:
a first electrode electrically connected to the active element;
a photosensitive layer formed on the first electrode; and
a second electrode formed on the photosensitive layer, wherein the first electrode is closer to the substrate than the second electrode, and the second electrode comprises a transparent conductive material.

6. An X-ray sensing device, comprising:
a photosensitive element configured to sense light having a first wavelength;
a lead-containing glass overlapping with the photosensitive element;
an X-ray conversion structure arranged on the lead-containing glass, and the lead-containing glass is located between the photosensitive element and the X-ray conversion structure, wherein the X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength; and
a bank structure located above the lead-containing glass and surrounding the X-ray conversion structure, wherein the X-ray conversion structure comprises:
a scintillator layer formed on the lead-containing glass and surrounded by the bank structure;
a first protection layer formed on the scintillator layer;
a metal layer formed on the first protection layer and overlapping with the scintillator layer; and
a second protection layer formed on the metal layer.

7. The X-ray sensing device of claim 4 , wherein the bank structure comprises a multilayer structure, and the first protection layer extends from the scintillator layer into the bank structure.

Assignees

• Au Optronics Corp

Inventors

• Tsai Chia-Hsiu
• Chang Chia-Ming
• Chen Ruei-Pei

Classifications

• H10F39/1898 Primary

  Indirect radiation image sensors, e.g. using luminescent members · CPC title

• H10F39/804 Primary

  Containers or encapsulations · CPC title

• H10F39/805

  Coatings · CPC title

• G01T1/2019

  Shielding against direct hits · CPC title

• C03C4/087

  for X-rays absorbing glass · CPC title