Quasicrystalline material and semiconductor device applying the same

Patent metadata

Field	Value
Publication number	US-11634793-B2
Application number	US-202016776729-A
Country	US
Kind code	B2
Filing date	Jan 30, 2020
Priority date	Apr 30, 2019
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.

First claim

What is claimed is:

1. A quasicrystalline material comprising:
a polyhedral quasicrystalline element,
the polyhedral quasicrystalline element having one or more of a 2-fold axis of symmetry, a 3-fold axis of symmetry, a 5-fold axis of symmetry, or a higher-fold axes of symmetry, the higher-fold axis of symmetry being greater than the 5-fold axis of symmetry, wherein the polyhedral quasicrystalline element having one of a pentagonal polyhedron quasicrystal material, an octagonal polyhedron quasicrystal material, a decagonal polyhedron quasicrystal material, a dodecagonal polyhedron quasicrystal material, an icohsahedral quasicrystal material, and a triacontahedral quasicrystal material,

the quasicrystalline material being capable of a one-step phase transition between a quasicrystalline phase and an approximant crystalline phase,
the approximant crystalline phase having a more regular atom arrangement than an atom arrangement of the quasicrystalline phase, and
the atom arrangement of the quasicrystalline phase being arranged quasiperiodically.

2. The quasicrystalline material of claim 1 , wherein
the quasicrystalline material includes a polyhedron cluster, and
the polyhedron cluster includes an irregular arrangement structure.

3. The quasicrystalline material of claim 1 , wherein a specific resistance of the quasicrystalline phase is at least twice a specific resistance of the approximant crystalline phase.

4. The quasicrystalline material of claim 1 , wherein the quasicrystalline material includes an Al-based alloy including V, Cr, or Mn, and
the Al-based alloy includes an icosahedral quasicrystal, a decagonal quasicrystal, or an octagonal quasicrystal.

5. The quasicrystalline material of claim 4 , wherein the quasicrystalline material includes AlSiMn as the Al-based alloy.

6. The quasicrystalline material of claim 1 , wherein the quasicrystalline material includes at least one selected from the group consisting of V—Ni—Si, Cr—Ni—Si, Mn—Si, Mn—Si—Al, Mn—Fe—Si, Al-TM′ (wherein TM′ is Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, or Cr), Al—Fe—Mn, Al—Ni—Co, Al—Cu—Mn, Al—Cu—Fe, Al—Cu—Ni, Al—Cu—Co, Al—Cu—Co—Si, Al—Mn—Pd, Al—Li—(Cu or Mg), Al—Re—Si, Al—Pd-TM (wherein TM is Fe, Ru or Os), Al—Cu—Ru, Al—Mg—(Ag, Cu, or Zn), Ga—Mg—Zn, V—Ni—Si, Cr—Ni,V—Ni, V—Ni—Si, Al—Mn, Al—Mn—Si, Al—Li—Cu, Al—Pd—Mn, Al—Cu—Fe, Al—Mg—Zn, Zn—Mg-RE (wherein RE is La, Ce, Nd, Sm, Gd, Dy, Ho, or Y), Ti—Zr—Ni, Ti-TM″ (wherein TM is Fe, Mn, Co, or Ni), Nb—Fe, V—Ni—Si, Pd—U—Si, and Cd—Yb.

7. The quasicrystalline material of claim 1 , wherein
the quasicrystalline material is capable of the one-step phase transition between the quasicrystalline phase and the approximant crystalline phase, starting from the quasicrystalline phase without first transitioning from an amorphous phase to the quasicrystalline phase, when the quasicrystalline material is rapidly solidified.

8. The quasicrystalline material of claim 7 , wherein a resistance of the quasicrystalline phase is at least twice a resistance of the approximant crystalline phase having a more regular atom arrangement than the quasicrystalline phase.

9. A semiconductor device comprising:
a first electrode;
a second electrode apart from the first electrode; and
a phase change layer between the first electrode and the second electrode, wherein
the phase change layer includes the quasicrystalline material of claim 1 , and
a phase of the phase change layer is configured to change between the quasicrystalline phase and the approximant crystalline phase in response to an electric signal applied to the phase change layer through the first electrode and second electrode.

10. The semiconductor device of claim 9 , wherein
the phase change layer includes a polyhedron cluster, and
the polyhedron cluster includes an irregular arrangement structure.

11. The semiconductor device of claim 9 , wherein
the quasicrystalline material includes an Al-based alloy including V, Cr, or Mn, and
the Al-based alloy includes an icosahedral quasicrystal, a decagonal quasicrystal, or an octagonal quasicrystal.

12. The semiconductor device of claim 11 , wherein the phase change layer comprises AlSiMn.

13. The semiconductor device of claim 9 , wherein the phase change layer comprises at least one selected from the group consisting of V—Ni—Si, Cr—Ni—Si, Mn—Si, Mn—Si—Al, Mn—Fe—Si, Al-TM′ (wherein TM′ is Ir, Pd, Pt, Os, Ru, Rh, Mn, Fe, Co, Ni, or Cr), Al—Fe—Mn, Al—Ni—Co, Al—Cu—Mn, Al—Cu—Fe, Al—Cu—Ni, Al—Cu—Co, Al—Cu—Co—Si, Al—Mn—Pd, Al—Li—(Cu,Mg), Al—Re—Si, Al—Pd-TM (wherein TM is Fe, Ru or Os), Al—Cu—Ru, Al—Mg—(Ag, Cu, or Zn), Ga—Mg—Zn, V—Ni—Si, Cr—Ni, V—Ni, V—Ni—Si, Al—Mn, Al—Mn—Si, Al—Li—Cu, Al—Pd—Mn, Al—Cu—Fe, Al—Mg—Zn, Zn—Mg-RE (wherein RE is La, Ce, Nd, Sm, Gd, Dy, Ho, or Y), Ti—Zr—Ni, Ti-TM″ (wherein TM is Fe, Mn, Co, or Ni), Nb—Fe, V—Ni—Si, Pd—U—Si, and Cd—Yb.

14. The semiconductor device of claim 9 , wherein
the semiconductor device includes a phase change memory device, and
the phase change memory device includes the phase change layer.

15. The semiconductor device of claim 9 , wherein the semiconductor device includes a neuromorphic device.

16. A quasicrystalline material comprising:
a polyhedral quasicrystalline element capable of a phase change between a quasicrystalline phase and an approximant crystalline phase,
the approximant crystalline phase having a more regular atom arrangement than an atom arrangement of the quasicrystalline phase, and
the atom arrangement of the quasicrystalline phase being arranged quasiperiodically, and

the quasicrystalline material being capable of a one-step phase transition between a quasicrystalline phase and an approximant crystalline phase, wherein
the quasicrystalline material includes an Al-based alloy represented by Chemical Formula 1,
Al a Si b Mn c ,   [Chemical Formula 1]

wherein, in Chemical Formula 1,
a is in a range of about 53 to about 68 at. %,
b is in a range of about 11 to about 27 at. %, and
c is in a range of about 16 to about 23 at. %.

17. The quasicrystalline material of claim 16 , wherein
the quasicrystalline material is capable of forming the quasicrystalline phase without forming an amorphous phase when rapidly solidified after being plasma treated.

18. The quasicrystalline material of claim 16 , wherein
a specific resistance of the quasicrystalline phase is at least twice a specific resistance of the approximant crystalline phase.

19. The quasicrystalline material of claim 18 , wherein
the quasicrystalline material is capable of the one-step phase transition between the quasicrystalline phase and the approximant crystalline phase, starting from the quasicrystalline phase without first transitioning from an amorphous phase to the quasicrystalline phase, when rapidly solidified.

20. A semiconductor device, comprising:
a first electrode;
a second electrode apart from the first electrode; and
a phase change layer between the first electrode and the second electrode,
the phase change layer including the quasicrystalline material of claim 16 .

Assignees

• Samsung Electronics Co Ltd
• Univ Yonsei Iacf

Inventors

• Lee Eunsung
• Yoon Duseop
• Yoo Joungeun
• Kim Dohyang

Classifications

• H10N70/235 Primary

  between different crystalline phases, e.g. cubic and hexagonal · CPC title

• C22C21/02 Primary

  with silicon as the next major constituent · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title

• H10N70/881

  Switching materials · CPC title

• C22C2200/06

  Quasicrystalline · CPC title