Glass and melt solder for the passivation of semiconductor components

Patent metadata

Field	Value
Publication number	US-11634356-B2
Application number	US-202117201060-A
Country	US
Kind code	B2
Filing date	Mar 15, 2021
Priority date	Mar 13, 2020
Publication date	Apr 25, 2023
Grant date	Apr 25, 2023

Abstract

The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

First claim

What is claimed is:

1. A melt solder with the following constituents in % by mole:

SiO 2
15.0 to 30.0

Al 2 O 3
0.5 to 8.0

B 2 O 3
14.0 to 25.0

ZnO
40.0 to 65.0

MgO
0.1 to 8.0

wherein the solder comprises a crystalline additive, wherein the crystalline additive contains magnesium and aluminum, and wherein the crystalline additive is present in an amount of at least 1.0% by volume of the solder.

2. The melt solder according to claim 1 , wherein the crystalline additive is present in an amount of at least 3.0% by volume and/or up to 25.0% by volume.

3. The melt solder according to claim 1 , wherein the crystalline additive comprises the following constituents in % by weight:

Magnesium
 1.0 to 15.0

Aluminum
15.0 to 25.0

Silicon
20.0 to 35.0

Oxygen
40.0 to 65.0

Zinc
<5.0

Boron
<5.0.

4. The melt solder according to claim 1 , wherein the crystalline additive is a magnesium-aluminum-silicate, in particularly Mg 2 Al 4 Si 5 O 18 .

5. The melt solder according to claim 1 , wherein the melt solder is a powder.

6. The melt solder according to claim 5 , wherein the powder has a particle size distribution characterized by a spread (d90−d10)/d50 of at least 1.00.

7. The melt solder according to claim 5 , wherein the powder has a particle size distribution characterized by a spread (d90−d10)/d50 of at least 1.80 and at most 6.00.

8. The melt solder according to claim 5 , having a mean particle size d50 of 1.0 μm to 10.0 μm.

9. The melt solder according to claim 1 , having an average thermal expansion in the temperature range of 20° C. to 300° C. of from 3.50 to 4.10 ppm/K, measured at a test specimen of 5×5×50 mm after melting the solder at a temperature of 700 to 750° C.

10. The melt solder according to claim 1 , having an average thermal expansion which in a temperature range of 300° C. to Tg-20° C. does not differ from the average thermal expansion of polycrystalline silicon by more than 0.50 ppm/K, wherein Tg is the glass-transition temperature of a glass portion which is contained in the solder and the thermal expansion is measured at a test specimen of 5×5×50 mm after melting the solder at a temperature of 700 to 750° C.

11. The melt solder according to claim 1 , having a low crystal formation after melting of the solder at a temperature of 700 to 750° C., further having a crystalline portion of at most 40% by weight, determined by means of X-ray diffraction and Rietveld simulation.

12. The melt solder according to claim 1 , having a low tendency to form willemite after melting of the solder at a temperature of 700 to 750° C., and further having a willemite portion of at most 20% by weight, determined by means of X-ray diffraction and Rietveld simulation.

13. The melt solder according to claim 1 , wherein the melt solder has a glass portion of at least 75.0% by volume and/or a glass portion of at most less than 99.0% by volume.

14. The melt solder according to claim 1 , wherein the melt solder comprises the following components in % by mole:

SiO 2
15.0 to 28.0

Al 2 O 3
0.6 to 7.5

B 2 O 3
15.0 to 23.0

ZnO
42.0 to 63.0

MgO
0.1 to 7.0.

15. The melt solder according to claim 1 , wherein the melt solder displays an etching rate of less than 10.0 μm/min in a 20% HNO 3 solution and/or less than 15.0 μm/min in a 5% HF solution at 20° C.

16. The melt solder according to claim 1 , comprising Na, K, Li, Cs, Rb, Cu, Hg, Cd, Cr and/or Fe in a portion of at most 100 ppm.

17. The melt solder according to claim 1 , comprising less than 1.0% by mole of Bi 2 O 3 , less than 100 ppm of PbO, less than 50 ppm of As 2 O 3 and/or less than 50 ppm of Sb 2 O 3 .

18. A semiconductor component comprising a passivation layer made of a melt solder according to claim 1 .

Assignees

• Schott Ag

Inventors

• Bartelt Linda Johanna
• Trizzino Antonio
• Gold Julia
• Pichler-Wilhelm Sabine
• Letz Martin
• Hovhannisyan Martun

Classifications

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/43 Primary

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• C03C3/074

  containing zinc · CPC title

• C03C3/066

  containing zinc · CPC title