High temperature oxidation protection for composites

US11634213B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11634213-B2
Application numberUS-201816190817-A
CountryUS
Kind codeB2
Filing dateNov 14, 2018
Priority dateNov 14, 2018
Publication dateApr 25, 2023
Grant dateApr 25, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An oxidation protection system disposed on a substrate is provided, which may comprise a boron layer comprising a boron compound disposed on the substrate; a silicon layer comprising a silicon compound disposed on the boron layer; and at least one sealing layer comprising monoaluminum phosphate and phosphoric acid disposed on the silicon layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for forming an oxidation protection system on a composite structure, comprising: applying a boron slurry to the composite structure, wherein the boron slurry comprises a boron compound and a first carrier fluid, wherein the boron compound comprises boron carbide; heating the composite structure to a temperature sufficient to form a boron layer on the composite structure; applying a silicon slurry to the composite structure, wherein the silicon slurry comprises a silicon compound and a second carrier fluid; heating the composite structure to a temperature sufficient to form a silicon layer on the composite structure; applying a first sealing slurry to the silicon layer, wherein the first sealing slurry comprises monoaluminum phosphate solution, phosphoric acid, a third carrier fluid, and a silicon-based surfactant; heating the composite structure to a temperature sufficient to form a first sealing layer; applying a second sealing slurry to the first sealing layer, wherein the second sealing slurry comprises monoaluminum phosphate solution and phosphoric acid; and heating the composite structure to a temperature sufficient to form a second sealing layer, wherein the first sealing layer and the second sealing layer are substantially free of phosphate glass. 2. The method of claim 1 , wherein the applying the boron slurry, the applying the silicon slurry, the applying the first sealing slurry, and the applying the second sealing slurry each comprise at least one of brushing or spraying. 3. The method of claim 2 , wherein the boron compound further comprises at least one of titanium diboride, boron nitride, or zirconium boride. 4. The method of claim 3 , wherein the boron layer comprises between one and four milligrams of boron compound per square centimeter. 5. The method of claim 2 , wherein the silicon compound comprises at least one of silicon carbide, silicon dioxide, a silicide compound, silicon, fumed silica, or silicon carbonitride. 6. The method of claim 5 , wherein the silicon layer comprises between one and six milligrams of silicon compound per square centimeter. 7. The method of claim 3 , wherein at least one of the boron compound or the silicon compound comprises particles having a particle size between 100 nanometers and 100 micrometers.

Assignees

Inventors

Classifications

  • characterised by properties of the disc surface; Discs lined with friction material · CPC title

  • C04B41/009Primary

    characterised by the material treated · CPC title

  • Ceramic composite, e.g. C/C composite infiltrated with Si or B, or ceramic matrix infiltrated with metal · CPC title

  • as construction elements for space vehicles or aeroplanes · CPC title

  • by spraying, e.g. by atomising · CPC title

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Frequently asked questions

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What does patent US11634213B2 cover?
An oxidation protection system disposed on a substrate is provided, which may comprise a boron layer comprising a boron compound disposed on the substrate; a silicon layer comprising a silicon compound disposed on the boron layer; and at least one sealing layer comprising monoaluminum phosphate and phosphoric acid disposed on the silicon layer.
Who is the assignee on this patent?
Goodrich Corp
What technology area does this patent fall under?
Primary CPC classification C04B41/009. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 25 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).