Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage

Patent metadata

Field	Value
Publication number	US-11626267-B2
Application number	US-202117243478-A
Country	US
Kind code	B2
Filing date	Apr 28, 2021
Priority date	Apr 28, 2021
Publication date	Apr 11, 2023
Grant date	Apr 11, 2023

Abstract

A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

First claim

What is claimed is:

1. A method of evaluating a region of a sample, the method comprising:
positioning a sample within a vacuum chamber;
generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column;
focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and
during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

2. The method of evaluating a region of a sample according to claim 1 further comprising generating, from the collected backscattered electrons, an image of at least a portion of the region.

3. The method of evaluating a region of a sample according to claim 1 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 50 and negative 1000 volts.

4. The method of evaluating a region of a sample according to claim 1 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 100 and negative 500 volts.

5. The method of evaluating a region of a sample according to claim 1 wherein the column cap has a conical shape with an opening at its tip and the method further comprises directing the electron beam through the opening.

6. The method of evaluating a region of a sample according to claim 1 wherein collecting backscattered electrons includes collecting the backscattered electrons with an in-lens detector and a top detector.

7. The method of evaluating a region of a sample according to claim 1 wherein collecting backscattered electrons includes collecting the backscattered electrons with an external detector.

8. A system for evaluating a region of a sample, the system comprising:
a vacuum chamber;
a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process;
a scanning electron microscope (SEM) column configured to direct a charged particle beam into the vacuum chamber toward the sample, the SEM column including an electron gun at one end of the column and a column cap at an opposite end of the column;
a detector configured to detect backscattered electrons; and
a processor and a memory coupled to the processor, the memory including a plurality of computer-readable instructions that, when executed by the processor, cause the system to:
position a sample within a vacuum chamber;
generate an electron beam with the scanning electron microscope (SEM) column;
focus the electron beam on the sample and scan the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and
collect backscattered electrons with one or more detectors while the electron beam is scanned across the region and while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

9. The system according to claim 8 wherein the plurality of computer-readable instructions further cause the system to, when executed by the processor, generate, from the detected backscattered electrons, an image of at least a portion of the region.

10. The system according to claim 8 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 50 and negative 1000 volts.

11. The system according to claim 8 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 100 and negative 500 volts.

12. The system according to claim 8 wherein the column cap has a conical shape with an opening at its tip and the electron beam is directed through the opening.

13. The system according to claim 8 wherein the one or more detectors include an in-lens detector and a top detector.

14. The system according to claim 8 wherein the system comprises an external detector.

15. A non-transitory computer-readable memory that stores a plurality of computer-readable instructions for evaluating a region of a sample by:
positioning a sample within a vacuum chamber;
generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column;
focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and
during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

16. The non-transitory computer-readable memory set forth in claim 15 wherein the plurality of computer-readable instructions for evaluating a region of a sample further include instructions to generate, from the collected backscattered electrons, an image of at least a portion of the region.

17. The non-transitory computer-readable memory set forth in claim 15 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 50 and negative 1000 volts.

18. The non-transitory computer-readable memory set forth in claim 15 wherein applying a negative bias to the column cap comprises applying a bias voltage between negative 100 and negative 500 volts.

19. The non-transitory computer-readable memory set forth in claim 15 wherein focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample comprises directing the electron beam through an opening at a tip of the column cap.

20. The non-transitory computer-readable memory set forth in claim 15 wherein collecting backscattered electrons includes collecting the backscattered electrons with an in-lens detector and a top detector.

Assignees

• Applied Materials Israel Ltd

Inventors

• Zur Yehuda
• Petrov Igor

Classifications

• G01N2223/6116

  semiconductor wafer · CPC title

• G01N2223/418

  electron microscope · CPC title

• G01N2223/053

  back scatter · CPC title

• G01N23/203

  Measuring back scattering · CPC title

• H01J2237/24475

  Scattered electron detectors · CPC title