Wafer inspection method and wafer

US11624902B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11624902-B2
Application numberUS-201816765529-A
CountryUS
Kind codeB2
Filing dateNov 9, 2018
Priority dateNov 24, 2017
Publication dateApr 11, 2023
Grant dateApr 11, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A wafer includes a substrate layer, a first mirror layer having a plurality of two-dimensionally arranged first mirror portions, and a second mirror layer having a plurality of two-dimensionally arranged second mirror portions. In the wafer, a gap is formed between the first mirror portion and the second mirror portion so as to form a plurality of Fabry-Perot interference filter portions. A wafer inspection method according to an embodiment includes a step of performing faulty/non-faulty determination of each of the plurality of Fabry-Perot interference filter portions, and a step of applying ink to at least part of a portion overlapping the gap when viewed in a facing direction on the second mirror layer of the Fabry-Perot interference filter portion determined as faulty.

First claim

Opening claim text (preview).

The invention claimed is: 1. A wafer inspection method comprising: a step of preparing a wafer including a substrate layer having a first surface and a second surface opposite to the first surface, a first mirror layer having a plurality of first mirror portions two-dimensionally arranged on the first surface, and a second mirror layer having a plurality of second mirror portions two-dimensionally arranged on the first mirror layer, in which a gap is formed between a portion of the first mirror layer at least including the first mirror portion and a portion of the second mirror layer at least including the second mirror portion facing each other so as to form a plurality of Fabry-Perot interference filter portions in which a distance between the first mirror portion and the second mirror portion facing each other varies by an electrostatic force; a step of performing faulty/non-faulty determination of each of the plurality of Fabry-Perot interference filter portions; and a step of applying ink to at least part of a portion overlapping the gap when viewed in a direction in which the first mirror portion and the second mirror portion face each other on the second mirror layer of the Fabry-Perot interference filter portion determined as faulty in the step of performing faulty/non-faulty determination. 2. The wafer inspection method according to claim 1 , wherein the at least part of the portion to which the ink is applied includes a through-hole formed from a surface of the second mirror layer opposite to the first mirror layer to the gap. 3. The wafer inspection method according to claim 1 , wherein in the step of applying ink, the ink is sequentially applied to one or more Fabry-Perot interference filter portions determined as faulty, after completion of the faulty/non-faulty determination of all the Fabry-Perot interference filter portions in the step of performing faulty/non-faulty determination. 4. The wafer inspection method according to claim 1 , wherein in the step of applying ink, the ink is applied to one Fabry-Perot interference filter portion every time the one Fabry-Perot interference filter portion is determined as faulty in the step of performing faulty/non-faulty determination. 5. The wafer inspection method according to claim 1 , wherein viscosity of the ink before curing is in a range from 500 cP to 50000 cP. 6. A wafer comprising: a substrate layer having a first surface and a second surface opposite to the first surface; a first mirror layer having a plurality of first mirror portions two-dimensionally arranged on the first surface; and a second mirror layer having a plurality of second mirror portions two-dimensionally arranged on the first mirror layer, wherein a gap is formed between a portion of the first mirror layer at least including the first mirror portion and a portion of the second mirror layer at least including the second mirror portion facing each other so as to form a plurality of Fabry-Perot interference filter portions in which a distance between the first mirror portion and the second mirror portion facing each other varies by an electrostatic force, and ink is applied to at least one faulty Fabry-Perot interference filter portion while the ink is not applied to at least one non-faulty Fabry-Perot interference filter portion, among the plurality of Fabry-Perot interference filter portions. 7. The wafer according to claim 6 , wherein the ink has penetrated into the gap formed in the faulty Fabry-Perot interference filter portion.

Assignees

Inventors

Classifications

  • using interference filters, e.g. multilayer dielectric filters · CPC title

  • Encapsulations or containers (for photovoltaic modules H10F19/80) · CPC title

  • having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

  • Subject matter not provided for in other groups of this subclass · CPC title

  • Coherent sources; lasers · CPC title

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What does patent US11624902B2 cover?
A wafer includes a substrate layer, a first mirror layer having a plurality of two-dimensionally arranged first mirror portions, and a second mirror layer having a plurality of two-dimensionally arranged second mirror portions. In the wafer, a gap is formed between the first mirror portion and the second mirror portion so as to form a plurality of Fabry-Perot interference filter portions. A waf…
Who is the assignee on this patent?
Hamamatsu Photonics Kk
What technology area does this patent fall under?
Primary CPC classification G02B26/001. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 11 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).