Low inductance component

US11621129B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11621129-B2
Application numberUS-202016850153-A
CountryUS
Kind codeB2
Filing dateApr 16, 2020
Priority dateApr 25, 2019
Publication dateApr 4, 2023
Grant dateApr 4, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A low inductance component may include a multilayer, monolithic device including a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first active termination and the second active termination. The lead(s) may be coupled with the first active termination, second active termination, and/or the at least one ground termination. The lead(s) may have respective length(s) and maximum width(s). A ratio of the length(s) to the respective maximum width(s) of the lead(s) may be less than about 20.

First claim

Opening claim text (preview).

What is claimed is: 1. A low inductance component comprising: multilayer, monolithic device comprising a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first active termination and the second active termination; and at least one lead coupled with at least one of the first active termination, the second active termination, or the at least one ground termination, wherein the at least one lead has a length and a maximum width, and wherein a ratio of the length to the maximum width of the at least one lead is less than about 20. 2. The low inductance component of claim 1 , wherein the at least one lead has an approximately rectangular cross section, the approximately rectangular cross section having the maximum width in a first direction and a minimum width in a second direction that is perpendicular to the first direction. 3. The low inductance component of claim 2 , wherein a ratio of the maximum width to the minimum width is greater than about 2. 4. The low inductance component of claim 1 , wherein the at least one lead comprises a first active lead, a second active lead, and at least one ground lead connected, respectively, with the first active termination, the second active termination, and the at least one ground termination. 5. The low inductance component of claim 1 , further comprising a discrete varistor comprising a first external varistor termination and a second external varistor termination, and wherein the at least one lead comprises a first lead coupled with each of the first active termination and the first external varistor termination. 6. The low inductance component of claim 1 , wherein the at least one lead comprises a plurality of woven elongated conductive members. 7. The component of claim 1 , wherein the multilayer, monolithic device further comprises: a body comprising a plurality of dielectric layers; a first plurality of electrode layers disposed within the body and connected with the first active termination; a second plurality of electrode layers disposed within the body and connected with the second active termination; and a third plurality of electrode layers connected with the at least one ground termination and capacitively coupled with each of the first plurality of electrode layers and second plurality of electrode layers to form the first capacitor between the first plurality and third plurality of electrode layers and the second capacitor between the second plurality and third plurality of electrode layers. 8. The component of claim 7 , wherein the third plurality of electrode layers are generally cross-shaped. 9. The component of claim 7 , wherein the at least one ground termination comprises a first ground termination and a second ground termination. 10. The component of claim 9 , wherein each of the third plurality of electrode layers each comprise a pair of opposite edges, one of the opposite edges connected with the first ground termination and the other of the opposite edges connected with the second ground termination. 11. The component of claim 9 , wherein the first ground termination is located opposite the second ground termination. 12. The component of claim 1 , wherein the first capacitor has a first capacitance and the second capacitor has a second capacitance that is approximately equal to t first capacitance. 13. The component of claim 1 , wherein at least one of the first capacitance or the second capacitance ranges from about 10 nF to about 3 μF. 14. The component of claim 7 , wherein; the third plurality of electrode layers overlap with the first plurality of electrode layers along a first overlapping area; and the third plurality of electrode layers overlap with the second plurality of electrode layers along a second overlapping area that is approximately equal to the first overlapping area. 15. The component of claim 5 , wherein the discrete varistor is stacked relative to the multilayer, monolithic device. 16. The component of claim 1 , further comprising an over-molded layer encapsulating the discrete varistor and multilayer, monolithic device. 17. The component of claim 1 , wherein a ratio of a thickness of the electrode stack-up to a thickness of the monolithic body is greater than about 0.4. 18. The component of claim 1 , further comprising a fourth plurality of electrodes connected with the first external termination and a fifth plurality of electrodes connected with the second external termination and interleaved with the fourth plurality of electrodes to form a third capacitor. 19. A method for forming a low inductance component, the method comprising: providing a multilayer, monolithic device body including electrodes that form a pair of capacitors; forming a first active termination, a second active termination, and at least one ground termination external to the multilayer, monolithic device body such that the pair of capacitors are connected in series between the first active termination and the second active termination; and connecting at least one lead with at least one of the first active termination, the second active termination, or the at least one ground termination, wherein the at least one lead has a length and a maximum width, and wherein a ratio of the length to the width of the at least one lead is less than about 20.

Assignees

Inventors

Classifications

  • of only capacitors · CPC title

  • H10D1/692Primary

    Electrodes · CPC title

  • H01G4/40Primary

    Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations · CPC title

  • Stacked capacitors (H01G4/33 takes precedence) · CPC title

  • Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title

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What does patent US11621129B2 cover?
A low inductance component may include a multilayer, monolithic device including a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first active termination and the second active termination. The lead(s) may be coupled with the first active termination, second active termination, and/or the at least …
Who is the assignee on this patent?
Avx Corp, Kyocera Avx Components Corp
What technology area does this patent fall under?
Primary CPC classification H10D1/692. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 04 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).