Organic light-emitting display apparatus

Patent metadata

Field	Value
Publication number	US-11620943-B2
Application number	US-202017024627-A
Country	US
Kind code	B2
Filing date	Sep 17, 2020
Priority date	Sep 16, 2014
Publication date	Apr 4, 2023
Grant date	Apr 4, 2023

Abstract

An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.

First claim

What is claimed is:

1. An organic light-emitting display apparatus, comprising:
a first scanning line;
a second scanning line;
a first voltage line;
a second voltage line; and
a pixel;
wherein:
the pixel comprises:
an organic light-emitting diode;
a semiconductor layer;
a first thin film transistor electrically connected to the organic light-emitting diode and the first voltage line;
a second thin film transistor electrically connected to the first thin film transistor and the first scanning line;
a third thin film transistor electrically connected to the second thin film transistor and the second voltage line, and electrically connected to the second scanning line; and
a fourth thin film transistor electrically connected to the third thin film transistor and the second voltage line;

the first thin film transistor, the second thin film transistor, the third thin film transistor, and the fourth thin film transistor are connected by the semiconductor layer;
the semiconductor layer is overlapped by the second scanning line in at least three portions; and
the second thin film transistor has two gate electrodes, which are a portion of the first scanning line and a portion protruding from the first scanning line, and overlap the semiconductor layer.

2. The apparatus of claim 1 , wherein the overlapping portions of the two gate electrodes with the semiconductor layer have different widths or lengths.

3. The apparatus of claim 1 , wherein a portion of the semiconductor layer which is not overlapped by the two gate electrodes of the second thin film transistor is curved.

4. The apparatus of claim 1 , wherein the two gate electrodes of the second thin film transistor are at a same layer.

5. The apparatus of claim 1 , wherein the semiconductor layer is curved under a gate electrode of the first thin film transistor.

6. The apparatus of claim 1 , further comprising a contact hole in at least one insulating layer between the semiconductor layer and the second voltage line,
wherein:
the contact hole is between the third thin film transistor and the fourth thin film transistor in a plan view; and
the third thin film transistor and the fourth thin film transistor are connected to the second voltage line through the contact hole.

7. The apparatus of claim 1 , further comprising a first conductive member electrically connecting the first thin film transistor and the second thin film transistor.

8. The apparatus of claim 7 , the first conductive member extends so as to be disposed in a contact hole which corresponds to the first thin film transistor and in a contact hole which corresponds to the second thin film transistor.

9. The apparatus of claim 7 , wherein the first conductive member crosses the first scanning line.

10. The apparatus of claim 1 , further comprising at least a fifth thin film transistor configured to operate according to an emission control signal transmitted through an emission control line.

11. The apparatus of claim 10 , wherein the second thin film transistor is electrically connected to a first electrode of the organic light-emitting diode via a sixth thin film transistor.

12. The apparatus of claim 10 , wherein the first thin film transistor is electrically connected to the first voltage line via the fifth thin film transistor.

13. An organic light-emitting display apparatus, comprising:
a first scanning line;
a second scanning line;
a first voltage line;
a second voltage line;
an organic light-emitting diode;
a semiconductor layer;
a first thin film transistor electrically connected to the organic light-emitting diode and the first voltage line;
a second thin film transistor electrically connected to the first thin film transistor and the first scanning line;
a third thin film transistor electrically connected to the second thin film transistor and the second voltage line, and electrically connected to the second scanning line;
a fourth thin film transistor electrically connected to the third thin film transistor and the second voltage line; and
a storage capacitor comprising:
a first electrode electrically connected to the first and second thin film transistors; and
a second electrode connected to the first voltage line;

wherein:
the first thin film transistor, the second thin film transistor, the third thin film transistor, and the fourth thin film transistor are connected by the semiconductor layer; and
the semiconductor layer is overlapped by the second scanning line in at least three portions.

14. The apparatus of claim 13 , wherein the second electrode comprises an opening in a region where the second electrode at least overlaps the first electrode.

15. The apparatus of claim 13 , wherein the first voltage line is connected to the second electrode.

16. An organic light-emitting display apparatus, comprising:
a first scanning line;
a second scanning line;
a first voltage line;
a second voltage line;
an organic light-emitting diode;
a semiconductor layer;
a first thin film transistor electrically connected to the organic light-emitting diode and the first voltage line;
a second thin film transistor electrically connected to the first thin film transistor and the first scanning line, wherein the second thin film transistor has two gate electrodes;
a third thin film transistor electrically connected to the second thin film transistor and the second voltage line, and electrically connected to the second scanning line;
a fourth thin film transistor electrically connected to the third thin film transistor and the second voltage line; and
a conductive layer overlapping a portion of the semiconductor layer which is between the two gate electrodes of the second thin film transistor,
wherein:
the first thin film transistor, the second thin film transistor, the third thin film transistor, and the fourth thin film transistor are connected by the semiconductor layer;
the semiconductor layer is overlapped by the second scanning line in at least three portions; and
the conductive layer is a part of the second voltage line.

Assignees

• Samsung Display Co Ltd

Inventors

• Yoon Juwon
• Lee Iljeong
• Lee Jiseon
• Im Choongyoul

Classifications

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/421

  having a particular composition, shape or crystalline structure of the active layer · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• G09G2300/0861

  with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes · CPC title

• H10K59/131 Primary

  Interconnections, e.g. wiring lines or terminals · CPC title