Manufacturing method of micro light emitting diode device including different-type epitaxial structures having respective connection portions of different thicknesses

Patent metadata

Field	Value
Publication number	US-11616050-B2
Application number	US-202117356538-A
Country	US
Kind code	B2
Filing date	Jun 24, 2021
Priority date	Aug 8, 2017
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.

First claim

What is claimed is:

1. A manufacturing method of a micro light emitting diode device, comprising:
(a) forming a plurality of first type epitaxial structures on a first substrate, and the plurality of first type epitaxial structures are separated from each other, wherein a first connection layer and a first adhesive layer are configured between the plurality of first type epitaxial structures and the first substrate, the first connection layer is connected to the plurality of first type epitaxial structures, and the first adhesive layer is located between the first connection layer and the first substrate, wherein a Young's modulus of the first connection layer is larger than a Young's modulus of the first adhesive layer; and
(b) removing the first connection layer located between any two adjacent of the plurality of first type epitaxial structures so as for form a plurality of first connection portions separated from each other, wherein each of the plurality of first connection portions is respectively connected to each of the corresponding first type epitaxial structures,
wherein a ratio of a thickness of each of the plurality of first connection portions to a thickness of each of the corresponding first type epitaxial structures is larger than 0.01 and smaller than or equal to 0.5;
forming a plurality of second type epitaxial structures, separately disposed on a second substrate;
forming a plurality of second connection portions, respectively and correspondingly disposed on a side of each of the plurality of second type epitaxial structures away from a target substrate, wherein a ratio of a thickness of each of the plurality of second connection portions to a thickness of each of the corresponding second type epitaxial structures is larger than or equal to 0.01 and smaller than or equal to 0.5; and
wherein a thickness of each of the first connection portions is different from a thickness of each of the second connection portions, and the plurality of first type epitaxial structures and the plurality of second type epitaxial structures respectively emit different light colors.

2. The manufacturing method of the micro light emitting diode device according to claim 1 , further comprising:
(c) bonding a portion of the plurality of first type epitaxial structures to the target substrate electrically.

3. The manufacturing method of the micro light emitting diode device according to claim 1 , further comprising:
(d) wherein a second connection layer and a second adhesive layer are configured between the plurality of second type epitaxial structures and the second substrate, the second connection layer is connected to the plurality of second type epitaxial structures, and the second adhesive layer is located between the second connection layer and the second substrate, wherein a Young's modulus of the second connection layer is larger than a Young's modulus of the second adhesive layer.

4. The manufacturing method of the micro light emitting diode device according to claim 3 , further comprising:
(f) bonding a portion of the plurality of first type epitaxial structures in the step (b) to the target substrate electrically; and
(g) bonding a portion of the plurality of second type epitaxial structures to the target substrate electrically.

5. The manufacturing method of the micro light emitting diode device according to claim 4 , wherein a total thickness of each of the plurality of first type epitaxial structures and each of the corresponding first connection portions is smaller than or equal to a total thickness of each of the plurality of second type epitaxial structures and each of the corresponding second connection portions.

6. The manufacturing method of the micro light emitting diode device according to claim 1 , wherein a ratio of a thickness of each of the plurality of first connection portions to a side length of each of the corresponding first type epitaxial structures is larger than 0.001 and smaller than or equal to 0.3.

7. The manufacturing method of the micro light emitting diode device according to claim 1 , in the step (b), the first connection layer located between any two adjacent of the plurality of first type epitaxial structures is removed via an etching process so as to form the plurality of first connection portions separated from each other.

8. The manufacturing method of the micro light emitting diode device according to claim 1 , in the step (a), the method of forming the plurality of first type epitaxial structures on the first substrate comprises:
(a-1) forming the plurality of first type epitaxial structures separated from each other on a first growth carrier;
(a-2) removing the first growth carrier; and
(a-3) forming the first connection layer and the first adhesive layer, bonding the plurality of first type epitaxial structures to the first substrate via the first adhesive layer.

9. The manufacturing method of the micro light emitting diode device according to claim 8 , a step is further comprised between the step (a-1) and the step (a-2):
(a-1-1) forming a temporary fixing layer so as to bond the plurality of first type epitaxial structures to a temporary substrate, wherein a bonding force between the temporary fixing layer and the temporary substrate is smaller than a bonding force between the first adhesive layer and the first substrate.

10. The manufacturing method of the micro light emitting diode device according to claim 9 , wherein the temporary fixing layer further covers the plurality of first type epitaxial structures.

11. The manufacturing method of the micro light emitting diode device according to claim 1 , in the step (a), the method for forming the plurality of first type epitaxial structures on the first substrate comprises:
(a-1) forming the plurality of first type epitaxial structures separated from each other on a first growth carrier;
(a-2) forming the first connection layer and the first adhesive layer, bonding the plurality of first type epitaxial structures to the first substrate via the first adhesive layer; and
(a-3) removing the first growth carrier.

Assignees

• Playnitride Inc

Inventors

• Lo Yu-Yun
• Lin Tzu-Yang
• Lai Yu-Hung

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title