Controlling voltage resistance through metal-oxide device

Patent metadata

Field	Value
Publication number	US-11615843-B2
Application number	US-202017124648-A
Country	US
Kind code	B2
Filing date	Dec 17, 2020
Priority date	Dec 17, 2020
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

First claim

What is claimed is:

1. A voltage resistance controlling apparatus, comprising:
at least two electrodes on adjacent endpoints;
a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide;
a second layer disposed on the first layer, wherein the second layer is made of an electrically conductive metal-oxide;
a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the second layer, the second layer being disposed on the first layer, operatively connects the at least two electrodes; and
a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

2. The voltage resistance controlling apparatus of claim 1 , wherein the second layer is comprised of an electrically insulating metal-oxide.

3. The voltage resistance controlling apparatus of claim 1 , wherein the second layer is comprised of tungsten oxide, WO 3-x .

4. The voltage resistance controlling apparatus of claim 1 , wherein the first layer is comprised of a plurality of filament sections connected through at least two conductive channels.

5. The voltage resistance controlling apparatus of claim 1 , wherein the first layer is comprised of a dielectric metal-oxide.

6. The voltage resistance controlling apparatus of claim 1 , wherein the first layer is comprised of hafnium dioxide, HfO 2 .

7. The voltage resistance controlling apparatus of claim 1 , further comprising a layered forming contact comprised of the forming contact disposed on the second layer disposed on the first layer, wherein the layered forming contact operatively connects the first electrode and the second electrode.

8. A computer-implemented method comprising:
identifying at least two filamentary channels within a first layer made of a metal-oxide within a voltage resistance controlling apparatus by using a plurality of sensor devices;
identifying a plurality of filamentary sections parallel to the at least two filamentary channels within the first layer within the voltage resistance controlling apparatus;
enabling resistance tuning in at least one identified filamentary section within the plurality of sections parallel to the at least two filamentary channels within the first layer within the voltage resistance controlling apparatus; and
applying a predetermined voltage laterally through the at least one identified filamentary section within the first layer via the at least two identified filamentary conductive channels.

9. The computer-implemented method of claim 8 , wherein identifying the at least two filamentary conductive channels comprises determining a flow of a plurality of charged ions through the first layer, wherein the flow of charged ions require a conductive medium to transport charged ions via the at least two filamentary conductive channels.

10. The computer-implemented method of claim 9 , wherein determining the flow of the plurality of charged ions through the first layer comprises:
determining the flow of the plurality of charged ions through at least the two identified filamentary channels at a first fixed period of time; and
determining the flow of the plurality of charged ions through the at least two identified filamentary channels at a second fixed period of time, wherein there is a difference of at least three seconds between the first fixed period of time and the second period of time.

11. The computer-implemented method of claim 8 , wherein enabling resistance tuning in at least one identified filamentary section comprises transmitting instructions to the plurality of the identified filamentary sections to receive charged ions through the at least two filamentary channels within the first layer.

12. The computer-implemented method of claim 8 , wherein enabling resistance tuning in at least one identified filamentary section comprises selectively trimming the resistance of the plurality of individual filament sections by using an application of the predetermined voltage.

13. The computer-implemented method of claim 8 , wherein applying the predetermined voltage laterally through the first layer comprises applying the predetermined voltage uniformly though a plurality of filamentary sections within the first layer.

14. The computer-implemented method of claim 8 , further comprising applying a different predetermined voltage to each respective filamentary section within the plurality of filamentary section within the first layer.

15. A computer system comprising:
one or more computer processors;
one or more computer readable storage media; and
program instructions stored on the one or more computer readable storage media for execution by at least one of the one or more processors, the program instructions comprising:
program instructions to identify at least two filamentary channels within a first layer made of a metal-oxide within a voltage resistance controlling apparatus by using a plurality of sensor devices;
program instructions to identify a plurality of filamentary sections parallel to the at least two filamentary channels within the first layer within the voltage resistance controlling apparatus;
program instructions to enable resistance tuning in at least one identified filamentary section within the plurality of sections parallel to the at least two filamentary channels within the first layer within the voltage resistance controlling apparatus; and
program instructions to apply a predetermined voltage laterally through the at least one identified filamentary section within the first layer via the at least two identified filamentary conductive channels.

16. The computer system of claim 15 , wherein the program instructions to identify the at least two filamentary conductive channels comprise program instructions to determine a flow of a plurality of charged ions through the first layer, wherein the flow of charged ions require a conductive medium to transport charged ions via the at least two filamentary conductive channels.

17. The computer system of claim 16 , wherein the program instructions to determine the flow of the plurality of charged ions through the first layer comprise:
program instructions to determine the flow of the plurality of charged ions through at least the two identified filamentary channels at a first fixed period of time; and
program instructions to determine the flow of the plurality of charged ions through the at least two identified filamentary channels at a second fixed period of time, wherein there is a difference of at least three seconds between the first fixed period of time and the second period of time.

18. The computer system of claim 15 , wherein the program instructions to enable resistance tuning in at least one identified filamentary section comprise program instructions to transmit instructions to the plurality of the identified filamentary sections to receive charged ions through the at least two filamentary channels within the first layer.

19. The computer system of claim 15 , wherein the program instructions to enable resistance tuning in at least one identified filamentary section comprise program instructions to selectively trim the resistance of the plurality of individual filament sections by using an application of the predetermined voltage.

20. The computer system of claim 15 , wherein the program instructions to apply

Assignees

• IBM

Inventors

• Offrein Bert Jan
• Fompeyrine Jean
• Bragaglia Valeria

Classifications

• G11C13/0069 Primary

  Writing or programming circuits or methods · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• G11C13/003

  Cell access · CPC title

• H10N70/801 Primary

  Constructional details of multistable switching devices · CPC title

• G06N3/065

  Analogue means · CPC title