Masks and display devices

US11613801B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11613801-B2
Application numberUS-201916441022-A
CountryUS
Kind codeB2
Filing dateJun 14, 2019
Priority dateMay 14, 2018
Publication dateMar 28, 2023
Grant dateMar 28, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The mask includes an evaporation surface and a glass surface facing away from the evaporation surface. The mask is provided with a plurality of evaporation holes distributed in an array. The evaporation hole penetrates the evaporation surface and the glass surface, and the evaporation hole includes a first opening on the evaporation surface and a second opening on the glass surface. An orthographic projection of the first opening on the glass surface is a first projection opening, and the first projection opening covers the second opening. An interval between the first projection opening and the second opening in a first direction of tensioning the mask is a first interval. An interval between the first projection opening and the second opening in a second direction perpendicular to the first direction is a second interval. The second interval is less than the first interval.

First claim

Opening claim text (preview).

The invention claimed is: 1. A mask, comprising: an evaporation surface; and a glass surface facing away from the evaporation surface, the mask being provided with a plurality of evaporation holes distributed in an array, the evaporation holes penetrating the evaporation surface and the glass surface, the evaporation holes comprising a first opening on the evaporation surface and a second opening on the glass surface, an orthographic projection of the first opening on the glass surface being a first projection opening, the first projection opening covering the second opening; wherein an interval between the first projection opening and the second opening in a first direction of tensioning the mask is a first interval, an interval between the first projection opening and the second opening in a second direction perpendicular to the first direction being a second interval, the second interval being less than the first interval; and wherein the plurality of evaporation holes is distributed in a plurality of rows, the second interval of evaporation holes in even rows is less than the first interval, the second interval of evaporation holes in odd rows is equal to the first interval. 2. The mask according to claim 1 , wherein the evaporation holes comprise a first etching hole and a second etching hole, the first etching hole defines the first opening, the second etching hole defines the second opening; the first etching hole shrinks in a direction from the first opening towards the second opening, and the second etching hole shrinks in a direction from the second opening towards the first opening and is in communication with the first etching hole. 3. The mask according to claim 1 , wherein: the first opening comprises two first sides and two second sides, the two first sides being oppositely spaced apart from each other along the first direction, the two second sides being oppositely spaced apart from each other along the second direction and are connected between the two first sides; the second opening has two third sides and two fourth sides, the two third sides being oppositely spaced apart from each other along the first direction, the two fourth sides being oppositely spaced apart from each other along the second direction and are connected between the two third sides; and the first interval is between one of the first sides and one of the third sides in the first direction, the second interval being between one of the second sides and one of the fourth sides in the second direction. 4. The mask according to claim 3 , wherein: each evaporation hole further comprises a first inclined wall connected between one of the first sides and one of the third sides and a second inclined wall connected between one of the second sides and one of the fourth sides; an inclination angle of the first inclined wall with respect to a thickness direction of the mask is a first inclination angle; an inclination angle of the second inclined wall with respect to the thickness direction of the mask is a second inclination angle; and the first inclination angle is greater than the second inclination angle. 5. The mask according to claim 1 , wherein: each of the second openings comprises a centerline parallel to the first direction, a plurality of the second openings is distributed in the plurality of rows, the centerlines of the second openings in the odd rows coincide, the centerlines of the second openings in the even rows coincide, and the centerlines of the second openings in the odd rows and the centerlines of the second openings in the even rows are staggered from each other in the second direction. 6. A mask comprising: an evaporation surface; and a glass surface facing away from the evaporation surface, the mask being provided with a plurality of evaporation holes distributed in an array, the evaporation holes penetrating the evaporation surface and the glass surface, the evaporation holes comprising a first opening on the evaporation surface and a second opening on the glass surface, an orthographic projection of the first opening on the glass surface being a first projection opening covering the second opening; wherein: an interval between the first projection opening and the second opening in a first direction of tensioning the mask is a first interval, an interval between the first projection opening and the second opening in a second direction perpendicular to the first direction being a second interval; the plurality of evaporation holes is distributed in a plurality of rows, the second interval of evaporation holes in even rows being less than the first interval, the second interval of evaporation holes in odd rows being equal to the first interval; or the second interval of evaporation holes in even rows is equal to the first interval, and the second interval of evaporation holes in odd rows is less than the first interval. 7. The mask according to claim 6 , wherein the evaporation holes comprise a first etching hole and a second etching hole, and the second etching hole is in communication with the first etching hole. 8. The mask according to claim 7 , wherein a cross-section of the first etching hole is a rectangular shape. 9. The mask according to claim 7 , wherein the first etching hole defines the first opening, the second etching hole defines the second opening, and the first etching hole shrinks in a direction from the first opening towards the second opening. 10. A mask comprising: a plurality of evaporation holes arranged in rows along a first direction and a second direction perpendicular to the first direction, each of the plurality of evaporation holes comprising a first opening on an evaporation surface and a second opening on a glass surface, an orthographic projection of the first opening on the glass surface being a first projection opening, the evaporation holes of adjacent two rows of evaporation holes in the first direction being staggered from each other in the second direction; and an interval in the first direction between adjacent two evaporation holes in the first direction being less than an interval between adjacent two evaporation holes in the second direction; wherein an interval between the first projection opening and the second opening in a first direction of tensioning the mask is a first interval, an interval between the first projection opening and the second opening in a second direction perpendicular to the first direction is a second interval, the second interval of evaporation holes in even rows is less than the first interval, and the second interval of evaporation holes in odd rows is equal to the first interval; and wherein each of the plurality of evaporation holes comprises a center, a first rounded corner in the first direction and a second rounded corner in the second direction, a first distance between the first rounded corner and the center is greater than a second distance between the second rounded corner and the center. 11. The mask according to claim 10 , wherein one of the evaporation holes has a diamond shape. 12. The mask according to claim 11 , wherein the one of the evaporation holes has a chamfered diamond shape having two diagonal lines extending along the first direction and the second direction, respectively. 13. The mask according to claim 10 , wherein a radius of curvature of the second rounded corner is greater than a radius of curvature of the first rounded corner. 14. The mask according to claim 13 , wherein the radius of curvature of the second rounded corner is less than twice of the radius of curvature of the first rounded corner. 1

Assignees

Inventors

Classifications

  • Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

  • C23C14/042Primary

    using masks · CPC title

  • using selective deposition, e.g. using a mask · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

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Frequently asked questions

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What does patent US11613801B2 cover?
The mask includes an evaporation surface and a glass surface facing away from the evaporation surface. The mask is provided with a plurality of evaporation holes distributed in an array. The evaporation hole penetrates the evaporation surface and the glass surface, and the evaporation hole includes a first opening on the evaporation surface and a second opening on the glass surface. An orthogra…
Who is the assignee on this patent?
Kunshan Govisionox Optoelectronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification C23C14/042. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).