Information processing device, substrate processing device, and information processing method
US-2024302817-A1 · Sep 12, 2024 · US
US11613683B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11613683-B2 |
| Application number | US-201816955290-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2018 |
| Priority date | Dec 27, 2017 |
| Publication date | Mar 28, 2023 |
| Grant date | Mar 28, 2023 |
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There is provided a production method of a chain silica particle dispersion. This production method includes a dispersion preparation step of hydrolyzing alkoxysilane in the presence of ammonia to prepare a silica particle dispersion, an ammonia removal step of removing the ammonia from the silica particle dispersion such that an ammonia amount relative to silica contained in the silica particle dispersion is 0.3% by mass or less, and a hydrothermal treatment step of hydrothermally treating the silica particle dispersion having a silica concentration of 12% by mass or more, from which the ammonia has been removed, at a temperature of not lower than 150° C. and lower than 250° C. An abrasive including such chain silica particles is high in polishing rate and excellent in polishing properties.
Opening claim text (preview).
What is claimed is: 1. A production method of an abrasive comprising a chain silica particle dispersion, comprising: a dispersion preparation step of hydrolyzing alkoxysilane in the presence of ammonia and an organic solvent to prepare a dispersion containing obtain silica particles, wherein an added amount of the ammonia used for hydrolysis is 0.005 to 1 mol per 1 mol of alkoxysilane, and an amount of water used for hydrolysis is 0.5 to 10 mol per 1 mol of Si—OR groups constituting alkoxysilane; an ammonia removal step of removing the ammonia in the dispersion such that an ammonia amount, including an amount of ammonia in the chain silica particles, relative to silica contained in the dispersion is 0.08% by mass or less; and a hydrothermal treatment step of, after the ammonia removal step, hydrothermally treating the dispersion at not lower than 150° C. and lower than 250° C. in a state in which a silica concentration is 12% by mass or more, wherein the chain silica particles prepared by the hydrothermal treatment step have an average linked number of 7 or more of silica particles. 2. The production method of an abrasive comprising a chain silica particle dispersion according to claim 1 , wherein the ammonia removal step includes removing the ammonia from the dispersion by at least one of a heat treatment and a decompression treatment. 3. The production method of an abrasive comprising a chain silica particle dispersion according to claim 1 , wherein each silica particle in the chain silica particles has an average particle size of 5 to 300 nm. 4. The production method of an abrasive comprising a chain silica particle dispersion according to claim 1 , wherein the ammonia removal step removes the ammonia in the dispersion such that the ammonia amount is 0.01% by mass or more and 0.08% by mass or less. 5. The production method of an abrasive comprising a chain silica particle dispersion according to claim 1 , wherein primary particles obtained by the dispersion preparation step has an average particle size of 5 to 300 nm, an aspect ratio of 1.00 to 1.20, and coefficient of variance of 30% or less.
of conductive or resistive materials · CPC title
by smoothing of conductive parts, e.g. by planarisation · CPC title
Submicrometer sized, i.e. from 0.1-1 micrometer · CPC title
Nanometer sized, i.e. from 1-100 nanometer · CPC title
operating processes therefor · CPC title
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