Ultra-long chiral carbon nanotube, method for preparing the same, application thereof, and high-performance photoelectric device

US11613466B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11613466-B2
Application numberUS-202017131676-A
CountryUS
Kind codeB2
Filing dateDec 22, 2020
Priority dateDec 25, 2019
Publication dateMar 28, 2023
Grant dateMar 28, 2023

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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This disclosure relates to the technical field of carbon nanotubes, provides an ultra-long chiral carbon nanotube and a method for preparing the same. The ultra-long chiral carbon nanotube has a diameter of about 1.5 nm to 5.5 nm and has a length of about 100 mm to 650 mm, the ultra-long chiral carbon nanotube includes a double-walled carbon nanotube and a triple-walled carbon nanotube, and each layer of the ultra-long chiral carbon nanotube is semiconducting and has a helix angle greater than 10°.

First claim

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What is claimed is: 1. An ultra-long chiral carbon nanotube, comprising: at least one of a double-walled carbon nanotube and a triple-walled carbon nanotube, wherein each layer of the ultra-long chiral carbon nanotube is semiconducting and has a helix angle greater than 10°, and wherein the ultra-long chiral carbon nanotube has a diameter between about 1.5 nm and 5.5 nm and has a length between about 100 mm and 650 mm. 2. The ultra-long chiral carbon nanotube of claim 1 , wherein the ultra-long chiral carbon nanotube has a minimum band gap distribution of 0.2 eV˜0.45 eV. 3. The ultra-long chiral carbon nanotube of claim 1 , wherein the ultra-long chiral carbon nanotube has a length between 1.5 nm and 3.5 nm; a difference between two helix angles of respective layers is α, wherein α is greater than 0° and less than 15°; the double-walled carbon nanotube has at least one wall with a helix angle β, wherein β is greater than 25° or β is between 16° and 22°. 4. The ultra-long chiral carbon nanotube of claim 3 , wherein β is greater than 25° and equal to or less than 30°, the diameter of the double-walled carbon nanotube is between about 2 nm and 5.5 nm and a length of the double-walled carbon nanotube is between about 154 nm and 650 nm. 5. The ultra-long chiral carbon nanotube of claim 1 , wherein the diameter of the triple-walled carbon nanotube is between about 2.5 nm and 5.5 nm; said triple-walled carbon nanotube has at least one wall with a helix angle γ, γ is either greater than 25° or equal to 19±3°, wherein helix angels of the layers of the triple-walled carbon nanotube are different from each other. 6. The ultra-long chiral carbon nanotube of claim 5 , wherein γ is greater than 25° and equal to or less than 30°, and a length of the triple-walled carbon nanotube is between 154 nm˜650 nm. 7. A method for preparing an ultra-long chiral carbon nanotube, comprising: loading a catalyst in the form of solid, liquid, or gas into a reactor; placing a substrate into the reactor; raising a temperature in the reactor to a reaction temperature under protection of an inert reducing gas; introducing a gas mixture of carbon source and carrier gas into the reactor for reaction; introducing the inert reducing gas into the reactor after the reaction completed, to prevent a carbon tube from being ablated during cooling; cooling the reactor; and obtaining the ultra-long chiral carbon nanotube once the reactor drops to room temperature, wherein the ultra-long chiral carbon nanotube has a diameter between about 1.5 nm and 5.5 nm and has a length between about 100 mm and 650 mm. 8. The method of claim 7 , wherein the catalyst comprises at least one of a transition metal element and a transition metal compound, and the transition metal element is selected from a group consisting of Fe, Co, Ni, Cu, Zn, Cr, Ti, Pd, Pt, and Au; wherein the catalyst is loaded into the reactor through at least one of following manners: spin coating, imprinting, steam plating, and vapor deposition. 9. The method of claim 7 , wherein during placing the substrate into the reactor, the reaction temperature is between about 900° C. and 1200° C. and reaction time is between about 6 minutes and 50 minutes. 10. The method of claim 9 , wherein when the reaction time is between about 6 minutes and 15 minutes, a first ultra-long chiral carbon nanotube is obtained, and the first ultra-long chiral carbon nanotube has a length of L 1 and a purity of 50-60%, wherein L 1 is greater than 50 mm and equal to or less than 100 mm; when the reaction time is between about 20 minutes and 30 minutes, a second ultra-long chiral carbon nanotube is obtained, and the second ultra-long chiral carbon nanotube has a length of L 2 and a purity of 80-90%, wherein L 2 is greater than about 100 mm and equal to or less than about 150 mm; and when the reaction time is between about 35 minutes and 50 minutes, a third ultra-long chiral carbon nanotube is obtained, and the third ultra-long chiral carbon nanotube has a length of L 3 and a purity of 100%, wherein L 3 is greater than about 150 mm and equal to or less than about 650 mm. 11. The method of claim 7 , wherein during placing the substrate into the reactor, when the carbon source is reacting in the reactor, the ultra-long chiral carbon nanotube is grown on the substrate at a growth rate of about 70-150 μm/s. 12. The method of claim 7 , wherein during placing the substrate into the reactor, when the carbon source is reacting in the reactor, an external filed is in-situ introduced at any time of the reaction to assist growth of the ultra-long chiral carbon nanotube, wherein the external filed comprises at least one of an electric field, a magnetic field, a sound field, and a light wave. 13. The method of claim 7 , wherein during placing the substrate into the reactor, before the temperature is raised to the reaction temperature, the temperature in the reactor is raised with a rate of about 10° C./min to 60° C./min. 14. The method of claim 7 , wherein the inert reducing gas is a mixture of inert gas and hydrogen. 15. The method of claim 7 , wherein the carrier gas is hydrogen and in the carrier gas, a volume ratio of hydrogen in the carrier gas to carbon source is about 1:1 to 5:1. 16. The method of claim 7 , wherein the carrier gas has a water content of about 0.3 wt %˜0.6 wt %. 17. The method of claim 7 , wherein the carbon source is selected from a group consisting of methane, ethane, propane, methanol, ethanol, ethylene, propylene, and carbon monoxide. 18. The method of claim 7 , wherein the inert gas is selected as at least one from a group consisting of helium, neon, and argon.

Assignees

Inventors

Classifications

  • C01B32/158Primary

    Carbon nanotubes · CPC title

  • C01B32/162Primary

    characterised by catalysts · CPC title

  • Multi-walled nanotubes · CPC title

  • involving continuous processes · CPC title

  • Nanotubes with a specific amount of walls · CPC title

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What does patent US11613466B2 cover?
This disclosure relates to the technical field of carbon nanotubes, provides an ultra-long chiral carbon nanotube and a method for preparing the same. The ultra-long chiral carbon nanotube has a diameter of about 1.5 nm to 5.5 nm and has a length of about 100 mm to 650 mm, the ultra-long chiral carbon nanotube includes a double-walled carbon nanotube and a triple-walled carbon nanotube, and eac…
Who is the assignee on this patent?
Univ Tsinghua
What technology area does this patent fall under?
Primary CPC classification C01B32/158. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).